SLUSDE1E September 2018 – November 2024 UCC21540 , UCC21540A , UCC21541 , UCC21542
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
PIN | TYPE(1) | DESCRIPTION | |
---|---|---|---|
NAME | NO. | ||
DIS | 5 | I | Disables both driver outputs if asserted high, enables if set low. It is recommended to tie this pin to ground if not used to achieve better noise immunity. Bypass using a ≈ 1-nF low ESR/ESL capacitor close to DIS pin when connecting to a µC with distance. |
NC | 6 | I | No internal connection. This pin can be left floating, tied to VCCI, or tied to GND. |
GND | 4 | P | Primary-side ground reference. All signals in the primary side are referenced to this ground. |
INA | 1 | I | Input signal for A channel. INA input has a TTL/CMOS compatible input threshold. This pin is pulled low internally if left open. It is recommended to tie this pin to ground if not used to achieve better noise immunity. |
INB | 2 | I | Input signal for B channel. INB input has a TTL/CMOS compatible input threshold. This pin is pulled low internally if left open. It is recommended to tie this pin to ground if not used to achieve better noise immunity. |
NC | 7 | — | No internal connection. This pin can be left floating, tied to VCCI, or tied to GND. |
NC | 12 | — | No internal
connection. Recommended to leave floating for maximum creepage
from driver A to driver B as needed. For SOIC-14 DWK Package, pin 12 and pin 13 are removed. |
13 | |||
OUTA | 15 | O | Output of driver A. Connect to the gate of the A channel FET or IGBT. |
OUTB | 10 | O | Output of driver B. Connect to the gate of the B channel FET or IGBT. |
VCCI | 3 | P | Primary-side supply voltage. Locally decoupled to GND using a low ESR/ESL capacitor located as close to the device as possible. |
VCCI | 8 | P | This pin is internally shorted to pin 3. Preference should be given to bypassing pin 3-4 instead of pins 8-4. |
VDDA | 16 | P | Secondary-side power for driver A. Locally decoupled to VSSA using a low ESR/ESL capacitor located as close to the device as possible. |
VDDB | 11 | P | Secondary-side power for driver B. Locally decoupled to VSSB using a low ESR/ESL capacitor located as close to the device as possible. |
VSSA | 14 | P | Ground for secondary-side driver A. Ground reference for secondary side A channel. |
VSSB | 9 | P | Ground for secondary-side driver B. Ground reference for secondary side B channel. |