SLUSE89C May 2023 – August 2024 UCC21550
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
PIN | TYPE(1) | DESCRIPTION | |
---|---|---|---|
NAME | NO. | ||
DIS | 5 | I | Disable both driver outputs if asserted high, enable both outputs if set low. It is recommended to tie this pin to ground if not used to achieve better noise immunity. This pin is internally pulled high if left floating. It is recommended to use an RC filter on DIS pin to filter high frequency noise when connecting to a microcontroller, with R = 0 Ω to 100 Ω and C = 100 pF to 1000 pF. |
DT | 6 | I | DT
pin configurations:
|
GND | 4 | G | Primary-side ground reference. All signals in the primary side are referenced to this ground. |
INA | 1 | I | Input signal for A channel. INA input has a TTL/CMOS compatible input threshold. This pin is pulled low internally if left open. It is recommended to use an RC filter on INA to filter high frequency noise, with R = 10 Ω to 100 Ω and C = 10 pF to 100 pF. |
INB | 2 | I | Input signal for B channel. INB input has a TTL/CMOS compatible input threshold. This pin is pulled low internally if left open. It is recommended to use an RC filter on INB to filter high frequency noise, with R = 10 Ω to 100 Ω and C = 10 pF to 100 pF. |
NC | 7 | – | No Internal connection. |
NC | 12 | – | No internal connection. |
NC | 13 | – | No internal connection. |
OUTA | 15 | O | Output of driver A. Connect to the gate of the A channel transistor through a gate resistor. |
OUTB | 10 | O | Output of driver B. Connect to the gate of the B channel transsitor through a gate resistor. |
VCCI | 3 | P | Primary-side supply voltage. Locally decouple to GND using a low ESR/ESL capacitor located as close to the device as possible. |
VCCI | 8 | P | Primary-side supply voltage. This pin is internally shorted to pin 3. |
VDDA | 16 | P | Secondary-side power for driver A. Locally decouple to VSSA using a low ESR/ESL capacitor located as close to the device as possible. |
VDDB | 11 | P | Secondary-side power for driver B. Locally decouple to VSSB using low ESR/ESL capacitor located as close to the device as possible. |
VSSA | 14 | G | Ground reference for secondary side A channel. |
VSSB | 9 | G | Ground reference for secondary side B channel. |