SLUSDS3A March   2020  – January 2024 UCC21739-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Power Ratings
    6. 5.6  Insulation Specifications
    7. 5.7  Safety-Related Certifications
    8. 5.8  Safety Limiting Values
    9. 5.9  Electrical Characteristics
    10. 5.10 Switching Characteristics
    11. 5.11 Insulation Characteristics Curves
    12. 5.12 Typical Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1 Propagation Delay
      1. 6.1.1 Regular Turn-OFF
    2. 6.2 Input Deglitch Filter
    3. 6.3 Active Miller Clamp
      1. 6.3.1 External Active Miller Clamp
    4. 6.4 Under Voltage Lockout (UVLO)
      1. 6.4.1 VCC UVLO
      2. 6.4.2 VDD UVLO
    5. 6.5 OC (Over Current) Protection
      1. 6.5.1 OC Protection with 2-Level Turn-OFF
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Power Supply
      2. 7.3.2  Driver Stage
      3. 7.3.3  VCC and VDD Undervoltage Lockout (UVLO)
      4. 7.3.4  Active Pulldown
      5. 7.3.5  Short Circuit Clamping
      6. 7.3.6  External Active Miller Clamp
      7. 7.3.7  Overcurrent and Short Circuit Protection
      8. 7.3.8  2-Level Turn-off
      9. 7.3.9  Fault ( FLT, Reset and Enable ( RST/EN)
      10. 7.3.10 Isolated Analog to PWM Signal Function
    4. 7.4 Device Functional Modes
  9. 8 Applications and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Input filters for IN+, IN- and RST/EN
        2. 8.2.2.2 PWM Interlock of IN+ and IN-
        3. 8.2.2.3 FLT, RDY and RST/EN Pin Circuitry
        4. 8.2.2.4 RST/EN Pin Control
        5. 8.2.2.5 Turn-On and Turn-Off Gate Resistors
        6. 8.2.2.6 External Active Miller Clamp
        7. 8.2.2.7 Overcurrent and Short Circuit Protection
          1. 8.2.2.7.1 Protection Based on Power Modules with Integrated SenseFET
          2. 8.2.2.7.2 Protection Based on Desaturation Circuit
          3. 8.2.2.7.3 Protection Based on Shunt Resistor in Power Loop
        8. 8.2.2.8 Isolated Analog Signal Sensing
          1. 8.2.2.8.1 Isolated Temperature Sensing
          2. 8.2.2.8.2 Isolated DC Bus Voltage Sensing
        9. 8.2.2.9 Higher Output Current Using an External Current Buffer
      3. 8.2.3 Application Curves
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Third-Party Products Disclaimer
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Support Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.1 Overview

The UCC21739-Q1 device is an advanced isolated gate driver with state-of-art protection and sensing features for SiC MOSFETs and IGBTs. The device can support up 1700V SiC MOSFETs and IGBTs, targeting larger than 10kW applications such as HEV/EV traction inverter, motor drive, on-board and off-board battery charger, solar inverter etc. The galvanic isolation is implemented by the capacitive isolation technology, which can realize reliable isolation between the low voltage DSP/MCU and high voltage side.

The ±10A peak sink and source current of UCC21739-Q1 can drive the SiC MOSFET modules and IGBT modules directly without an extra buffer. The input side is isolated with the output side with a basic isolation barrier based on capacitive isolation technology. The minimum 150V/ns CMTI guarantees the reliability of the strong drive strength. The small propagation delay and part-to-part skew can minimize the deadtime setting, so the conduction loss can be reduced.

The device includes extensive protection and monitor features to increase the reliability and robustness of the SiC MOSFET and IGBT based systems. The 12V output side power supply UVLO is suitable for switches with gate voltage ≥ 15V. The active miller clamp feature prevents the false turn on causing by miller capacitance during fast switching. External miller clamp FET can be used, providing more versatility to the system design. The device has the state-of-art overcurrent and short circuit detection time, and fault reporting function to the low voltage side DSP/MCU. The 2-level turn-off with soft turn off is triggered when the overcurrent or short circuit fault is detected, minimizing the short circuit energy while reducing the overshoot voltage on the switches.

The isolated analog to PWM sensor can be used as switch temperature sensing, DC bus voltage sensing, auxiliary power supply sensing, etc. The PWM signal can be fed directly to DSP/MCU or through a low-pass-filter as an analog signal.