SLUSDS3A
March 2020 – January 2024
UCC21739-Q1
PRODUCTION DATA
1
1
Features
2
Applications
3
Description
4
Pin Configuration and Functions
5
Specifications
5.1
Absolute Maximum Ratings
5.2
ESD Ratings
5.3
Recommended Operating Conditions
5.4
Thermal Information
5.5
Power Ratings
5.6
Insulation Specifications
5.7
Safety-Related Certifications
5.8
Safety Limiting Values
5.9
Electrical Characteristics
5.10
Switching Characteristics
5.11
Insulation Characteristics Curves
5.12
Typical Characteristics
6
Parameter Measurement Information
6.1
Propagation Delay
6.1.1
Regular Turn-OFF
6.2
Input Deglitch Filter
6.3
Active Miller Clamp
6.3.1
External Active Miller Clamp
6.4
Under Voltage Lockout (UVLO)
6.4.1
VCC UVLO
6.4.2
VDD UVLO
6.5
OC (Over Current) Protection
6.5.1
OC Protection with 2-Level Turn-OFF
7
Detailed Description
7.1
Overview
7.2
Functional Block Diagram
7.3
Feature Description
7.3.1
Power Supply
7.3.2
Driver Stage
7.3.3
VCC and VDD Undervoltage Lockout (UVLO)
7.3.4
Active Pulldown
7.3.5
Short Circuit Clamping
7.3.6
External Active Miller Clamp
7.3.7
Overcurrent and Short Circuit Protection
7.3.8
2-Level Turn-off
7.3.9
Fault ( FLT, Reset and Enable ( RST/EN)
7.3.10
Isolated Analog to PWM Signal Function
7.4
Device Functional Modes
8
Applications and Implementation
8.1
Application Information
8.2
Typical Application
8.2.1
Design Requirements
8.2.2
Detailed Design Procedure
8.2.2.1
Input filters for IN+, IN- and RST/EN
8.2.2.2
PWM Interlock of IN+ and IN-
8.2.2.3
FLT, RDY and RST/EN Pin Circuitry
8.2.2.4
RST/EN Pin Control
8.2.2.5
Turn-On and Turn-Off Gate Resistors
8.2.2.6
External Active Miller Clamp
8.2.2.7
Overcurrent and Short Circuit Protection
8.2.2.7.1
Protection Based on Power Modules with Integrated SenseFET
8.2.2.7.2
Protection Based on Desaturation Circuit
8.2.2.7.3
Protection Based on Shunt Resistor in Power Loop
8.2.2.8
Isolated Analog Signal Sensing
8.2.2.8.1
Isolated Temperature Sensing
8.2.2.8.2
Isolated DC Bus Voltage Sensing
8.2.2.9
Higher Output Current Using an External Current Buffer
8.2.3
Application Curves
9
Power Supply Recommendations
10
Layout
10.1
Layout Guidelines
10.2
Layout Example
11
Device and Documentation Support
11.1
Third-Party Products Disclaimer
11.2
Documentation Support
11.2.1
Related Documentation
11.3
Receiving Notification of Documentation Updates
11.4
Support Resources
11.5
Trademarks
11.6
Electrostatic Discharge Caution
11.7
Glossary
12
Revision History
13
Mechanical, Packaging, and Orderable Information
Package Options
Mechanical Data (Package|Pins)
DW|16
MSOI003I
Thermal pad, mechanical data (Package|Pins)
DW|16
QFND505A
Orderable Information
slusds3a_oa
slusds3a_pm
1
Features
3kV
RMS
single channel isolated gate driver
AEC-Q100 qualified for automotive applications
Device temperature grade 1: -40°C to +125°C ambient operating temperature range
Device HBM ESD classification level 3A
Device CDM ESD classification level C3
SiC MOSFETs and IGBTs up to 900V
pk
33V maximum output drive voltage (VDD-VEE)
±10A drive strength and split output
150V/ns minimum CMTI
270ns response time fast overcurrent protection
External active miller clamp
Internal 2-level turn-off when fault happens
Isolated analog sensor with PWM output for
Temperature sensing with NTC, PTC or thermal diode
High voltage DC-Link or phase voltage
Alarm
FLT
on over current and reset from
RST
/EN
Fast enable/disable response on
RST
/EN
Reject <40ns noise transient and pulse on input pins
12V VDD UVLO with power good on RDY
Inputs/outputs with over/under-shoot transient voltage Immunity up to 5V
130ns (maximum) propagation delay and 30ns (maximum) pulse/part skew
SOIC-16 DW package with creepage and clearance distance > 8mm
Operating junction temperature –40°C to 150°C
Safety-related certifications :
4242V
PK
isolation per DIN EN IEC 60747-17 (VDE 0884-17)