SLUSD78C February 2019 – January 2023 UCC21750
PRODUCTION DATA
The UCC21750 device is very versatile because of the strong drive strength, wide range of output power supply, high isolation ratings, high CMTI and superior protection and sensing features. The 1.5-kVRMS working voltage and 12.8-kVPK surge immunity can support up both SiC MOSFET and IGBT modules with DC bus voltage up to 2121 V. The device can be used in both low power and high power applications such as the traction inverter in HEV/EV, on-board charger and charging pile, motor driver, solar inverter, industrial power supplies and so forth. The device can drive the high power SiC MOSFET module, IGBT module or paralleled discrete device directly without external buffer drive circuit based on NPN/PNP bipolar transistor in totem-pole structure, which allows the driver to have more control to the power semiconductor and saves the cost and space of the board design. The UCC21750 can also be used to drive very high power modules or paralleled modules with external buffer stage. The input side can support power supply and microcontroller signal from 3.3 V to 5 V, and the device level shifts the signal to output side through reinforced isolation barrier. The device has wide output power supply range from 13 V to 33 V and support wide range of negative power supply. This feature allows the driver to be used in SiC MOSFET applications, IGBT application and many others. The 12-V UVLO benefits the power semiconductor with lower conduction loss and improves the system efficiency. As a reinforced isolated single channel driver, the device can be used to drive either a low-side or high-side driver.
The UCC21750 device features extensive protection and monitoring features, which can monitor, report and protect the system from various fault conditions.