UCC21755-Q1 Automotive 10A Source/Sink Reinforced Isolated Single Channel Gate Driver for SiC/IGBT with Active Protection, Isolated Analog Sensing and High-CMTI
- SLUSEM9A September 2022 – June 2024 UCC21755-Q1
  
  PRODUCTION DATA

Data Sheet

UCC21755-Q1 Automotive 10A Source/Sink Reinforced Isolated Single Channel Gate
Driver for SiC/IGBT with Active Protection, Isolated Analog Sensing and High-CMTI

1 Features

5.7kV_RMS single-channel isolated gate driver
AEC-Q100 Qualified with the following results:
- Device temperature grade 1: -40°C to +125°C ambient operating temperature range
Functional Safety Quality-Managed
- Documentation available to aid functional safety system design
SiC MOSFETs and IGBTs up to 2121V_pk
33V maximum output drive voltage (VDD-VEE)
±10A drive strength and split output
150V/ns minimum CMTI
200ns response time fast DESAT protection with 5V threshold
4A internal active Miller clamp
400mA soft turn-off when fault happens
Isolated analog sensor with PWM output for
- Temperature sensing with NTC, PTC, or thermal diode
- High voltage DC-link or phase voltage
Alarm FLT on overcurrent and reset from RST/EN
Fast enable/disable response on RST/EN
Reject <40ns noise transient and pulse on input pins
12V VDD UVLO with power good on RDY
Inputs/outputs with over- or under-shoot transient voltage immunity up to 5V
130ns (maximum) propagation delay and 30ns (maximum) pulse/part skew
SOIC-16 DW package with creepage and clearance distance > 8mm
Operating junction temperature –40°C to 150°C