SLUSEM9A September   2022  – June 2024 UCC21755-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Power Ratings
    6. 5.6  Insulation Specifications
    7. 5.7  Safety Limiting Values
    8. 5.8  Electrical Characteristics
    9. 5.9  Switching Characteristics
    10. 5.10 Insulation Characteristics Curves
    11. 5.11 Typical Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1 Propagation Delay
      1. 6.1.1 Non-Inverting and Inverting Propagation Delay
    2. 6.2 Input Deglitch Filter
    3. 6.3 Active Miller Clamp
      1. 6.3.1 Internal On-Chip Active Miller Clamp
    4. 6.4 Undervoltage Lockout (UVLO)
      1. 6.4.1 VCC UVLO
      2. 6.4.2 VDD UVLO
    5. 6.5 Desaturation (DESAT) Protection
      1. 6.5.1 DESAT Protection with Soft Turn-OFF
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Power Supply
      2. 7.3.2  Driver Stage
      3. 7.3.3  VCC and VDD Undervoltage Lockout (UVLO)
      4. 7.3.4  Active Pulldown
      5. 7.3.5  Short Circuit Clamping
      6. 7.3.6  Internal Active Miller Clamp
      7. 7.3.7  Desaturation (DESAT) Protection
      8. 7.3.8  Soft Turn-Off
      9. 7.3.9  Fault (FLT), Reset and Enable (RST/EN)
      10. 7.3.10 Isolated Analog to PWM Signal Function
    4. 7.4 Device Functional Modes
  9. 8 Applications and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Input Filters for IN+, IN-, and RST/EN
        2. 8.2.2.2 PWM Interlock of IN+ and IN-
        3. 8.2.2.3 FLT, RDY, and RST/EN Pin Circuitry
        4. 8.2.2.4 RST/EN Pin Control
        5. 8.2.2.5 Turn-On and Turn-Off Gate Resistors
        6. 8.2.2.6 Overcurrent and Short Circuit Protection
        7. 8.2.2.7 Isolated Analog Signal Sensing
          1. 8.2.2.7.1 Isolated Temperature Sensing
          2. 8.2.2.7.2 Isolated DC Bus Voltage Sensing
        8. 8.2.2.8 Higher Output Current Using an External Current Buffer
      3. 8.2.3 Application Curves
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Support Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.1 Application Information

The device is very versatile because of the strong drive strength, wide range of output power supply, high isolation ratings, high CMTI and superior protection and sensing features. The 1.5-kVRMS working voltage and 12.8-kVPK surge immunity can support up both SiC MOSFET and IGBT modules with DC bus voltage up to 2121 V. The device can be used in both low power and high power applications such as the traction inverter in HEV/EV, on-board charger and charging pile, motor driver, solar inverter, industrial power supplies, and so on. The device can drive the high power SiC MOSFET module, IGBT module or paralleled discrete device directly without external buffer drive circuit based on NPN/PNP bipolar transistor in totem-pole structure, which allows the driver to have more control to the power semiconductor and saves the cost and space of the board design. The device can also be used to drive very high power modules or paralleled modules with external buffer stage. The input side can support power supply and microcontroller signal from 3.3 V to 5 V, and the device level shifts the signal to output side through reinforced isolation barrier. The device has wide output power supply range from 13 V to 33 V and support wide range of negative power supply. This allows the driver to be used in SiC MOSFET applications, IGBT application, and many others. The 12-V UVLO benefits the power semiconductor with lower conduction loss and improves the system efficiency. As a reinforced isolated single channel driver, the device can be used to drive either a low-side or high-side driver.

The device features extensive protection and monitoring features, which can monitor, report and protect the system from various fault conditions.

  • Fast detection and protection for the overcurrent and short circuit fault. The semiconductor is shutdown when the fault is detected and FLT pin is pulled down to indicate the fault detection. The device is latched unless reset signal is received from the RST/EN pin.
  • Soft turn-off feature to protect the power semiconductor from catastrophic breakdown during overcurrent and short circuit fault. The shutdown energy can be controlled while the overshoot of the power semiconductor is limited.
  • UVLO detection to protect the semiconductor from excessive conduction loss. Once the device is detected to be in UVLO mode, the output is pulled down and RDY pin indicates the power supply is lost. The device is back to normal operation mode once the power supply is out of the UVLO status. The power good status can be monitored from the RDY pin.
  • Analog signal seensing with isolated analog to PWM signal feature. This feature allows the device to sense the temperature of the semiconductor from the thermal diode or temperature sensing resistor, or dc bus voltage with resistor divider. A PWM signal is generated on the low voltage side with reinforced isolated from the high voltage side. The signal can be fed back to the microcontroller for the temperature monitoring, voltage monitoring, and and so on.
  • The active Miller clamp feature protects the power semiconductor from false turn on.
  • Enable and disable function through the RST/EN pin
  • Short circuit clamping
  • Active pulldown