SLUS822C June   2008  – August 2016 UCC27200-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Input Stages
        1. 7.3.1.1 Undervoltage Lockout (UVLO)
        2. 7.3.1.2 Level Shift
        3. 7.3.1.3 Boot Diode
        4. 7.3.1.4 Output Stages
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Switching the MOSFETs
      2. 8.1.2 Dynamic Switching of the MOSFETs
      3. 8.1.3 Delay Matching and Narrow Pulse Widths
      4. 8.1.4 Boot-Diode Performance
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Input Threshold Type
        2. 8.2.2.2 VDD Bias Supply Voltage
        3. 8.2.2.3 Peak Source and Sink Currents
        4. 8.2.2.4 Propagation Delay
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Power Dissipation
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Related Links
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Community Resource
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

9 Power Supply Recommendations

The bias supply voltage range for which the UCC2720x-Q1 device is recommended to operate from 8 V to 17 V. The lower end of this range is governed by the internal undervoltage-lockout (UVLO) protection feature on the VDD pin supply circuit blocks. Whenever the driver is in UVLO condition when the VDD pin voltage is below the V(ON) supply start threshold, this feature holds the output low, regardless of the status of the inputs. The upper end of this range is driven by the 20-V absolute maximum voltage rating of the VDD pin of the device (which is a stress rating). Keeping a 3-V margin to allow for transient voltage spikes, the maximum recommended voltage for the VDD pin is 17 V. The UVLO protection feature also involves a hysteresis function, which means that when the VDD pin bias voltage has exceeded the threshold voltage and device begins to operate, and if the voltage drops, then the device continues to deliver normal functionality unless the voltage drop exceeds the hysteresis specification VDD(hys). Therefore, ensuring that, while operating at or near the 8-V range, the voltage ripple on the auxiliary power supply output is smaller than the hysteresis specification of the device is important to avoid triggering device shutdown. During system shutdown, the device operation continues until the VDD pin voltage has dropped below the V(OFF) threshold, which must be accounted for while evaluating system shutdown timing design requirements. Likewise, at system start-up the device does not begin operation until the VDD pin voltage has exceeded the V(ON) threshold.

The quiescent current consumed by the internal circuit blocks of the device is supplied through the VDD pin. Although this fact is well known, it is important to recognize that the charge for source current pulses delivered by the HO pin is also supplied through the same VDD pin. As a result, every time a current is sourced out of the HO pin, a corresponding current pulse is delivered into the device through the VDD pin. Thus, ensure that a local bypass capacitor is provided between the VDD and GND pins and located as close to the device as possible for the purpose of decoupling is important. A lo-ESR, ceramic surface-mount capacitor is required. TI recommends using a capacitor in the range from 0.22 μF to 4.7 μF between VDD and GND. In a similar manner, the current pulses delivered by the LO pin are sourced from the HB pin. Therefore, TI recommends placing a 0.022-μF to 0.1-μF local decoupling capacitor between the HB and HS pins.