SLUSCG0B December   2015  – July 2024 UCC27211A-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Timing Diagrams
    8. 5.8 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Input Stages
      2. 6.3.2 Undervoltage Lockout (UVLO)
      3. 6.3.3 Level Shift
      4. 6.3.4 Boot Diode
      5. 6.3.5 Output Stages
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Input Threshold Type
        2. 7.2.2.2 VDD Bias Supply Voltage
        3. 7.2.2.3 Peak Source and Sink Currents
        4. 7.2.2.4 Propagation Delay
        5. 7.2.2.5 Power Dissipation
      3. 7.2.3 Application Curves
  9. 8 Power Supply Recommendations
  10. 9 Layout
    1. 9.1 Layout Guidelines
    2. 9.2 Layout Example
    3. 9.3 Thermal Considerations
  11. 10Device and Documentation Support
    1. 10.1 Third-Party Products Disclaimer
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
    3. 10.3 Receiving Notification of Documentation Updates
    4. 10.4 Support Resources
    5. 10.5 Trademarks
    6. 10.6 Electrostatic Discharge Caution
    7. 10.7 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

11 Revision History

Changes from Revision A (January 2016) to Revision B (July 2024)

  • Changed document title to reflect the device's key features. Go
  • Changed several specifications to reflect the device characteristics.Go
  • Changes Features section: 1) Changed CDM classification level to follow latest JEDEC standard, no change in actual HBM rating (From: C6. To: C3). 2) Changed junction temperature range specification (From: -40°C to 140°C. To: -40°C to 150°C). 3) Changed peak currents to reflect specification, no change in actual drive strength (From: 4A/4A. To: 3.7A/4.5A). 4) Deleted 0.9-Ω Pullup and Pulldown Resistance since it is not specified in the Electrical Characteristics.Go
  • Updated Applications section with list of top 5 typical applications.Go
  • Changed in Description section: 1) Added new D (SOIC, 8) package variant. 2) Changed peak current to display typical pull-up/pull-down, no chang in actual specification (From: 4A4/A. To: 3.7A/4.5A). 3) Deleted pullup/pulldown resistance information since this is not an actual specification in the electrical charactersitics table. 4) Updated propagation delay plot with new data. 5) Changed HS transient tolerance to match the specification in the Absolute Maximum table (From: -18V. To: -(24-VDD)V. Go
  • Updated Recommended Operating Conditions: Operating Junction Temperature maximum changed from 140°C to 150°C.Go
  • Updated Thermal Information section to reflect device characteristics. Go
  • Updated Supply Currents specifications in the Electrical Characteristics table: 1) Minimum specification removed for IDD, IDDO, IHB and IHBO. 2) IDD typical changed (From: 0.085mA. To: 0.11mA). 3) IDDO typical changed (From: 2.5mA. To: 1.4mA). 4) IDDO maximum changed (From: 6.5mA. To: 3mA. 5) IHBO typical changed (From: 2.5mA. To: 1.3mA). 6) IHBO maximum changed (From: 5.1mA. To: 3mA). 8) IHBS test condition changed to match VHS maximum recommended operating conditions (From: 115V. To: 105V). 9) IHBSO typical changed (From: 0.07mA. To: 0.03mA). 10) IHBSO maximum changed (From: 1.2mA. To: 1mA). Go
  • Updated Bootstrap diode specifications in the Electrical Characteristics table: 1) VF maximum changed (From: 0.8V. To: 0.85V). 2) VFI typical changed (From: 0.85V. To: 0.9V), and maximum changed (From: 0.95V. To: 1.05V). 3) RD test conditions changed (From: 100mA and 80mA. To: 180mA and 160mA). 4) RD typical changed (From: 0.5Ω. To: 0.55Ω). Go
  • Updated LO/HO Gate Driver specifications in the Electrical Characteristics table: 1) Minimum specification removed for VLOL, VLOH, VHOL, VHOH. 2) VLOL and VHOL typical changed (From 0.1V. To 0.07V). 3) VLOH and VHOH typical changed (From: 0.16V. To: 0.11V).Go
  • Updated Propagation Delays specifications in the Switching Characteristics table: 1) Changed TDLFF and TDHFF typicals (From: 16ns. To: 19ns). Go
  • Updated Output Rise and Fall Time specifications in the Switching Characteristis table: 1) tR typical changed (From: 0.36us. To: 0.27us). 2) tF typical changed (From: 0.15us. To: 0.16us). Go
  • Updated Switching Characteristics - Miscellaneous table: tIN_PW maximum changed (From: 50ns. To: 40ns).Go
  • Updated all plots in Typical Characteristics section to reflect the typical specification of the device. Go
  • Changed typical specifications listed in the Overview section to match the device specifications in the Electrical Characteristics table.Go
  • Changed Input Stages section to match the input pulldown resistance typical specification in the electrical characteristics table (From: 70kΩ. To: 68kΩ). Go
  • Changed application curves to display propagation delay and rise/fall time plots. Go

Changes from Revision * (December 2015) to Revision A (January 2016)

  • Changed marketing status from product preview to production data.Go