SLUSBQ0C August 2013 – August 2015 UCC27517A
PRODUCTION DATA.
The UCC27517A single-channel, high-speed, low-side gate driver device is capable of effectively driving MOSFET and IGBT power switches. Using a design that inherently minimizes shoot-through current, the UCC27517A is capable of sourcing and sinking high peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay typically 13 ns.
The UCC27517A device is capable of handling –5 V at input.
The UCC27517A provides 4-A source and 4-A sink (symmetrical drive) peak-drive current capability at VDD = 12 V.
The UCC27517A is designed to operate over a wide VDD range of 4.5 V to 18 V and wide temperature range of –40°C to 140°C. Internal Undervoltage Lockout (UVLO) circuitry on VDD pin holds output low outside VDD operating range. The capability to operate at low voltage levels such as below 5 V, along with best-in-class switching characteristics, is especially suited for driving emerging wide band-gap power-switching devices such as GaN power semiconductor devices.
PART NUMBER | PACKAGE | BODY SIZE (NOM) |
---|---|---|
UCC27517A | SOT-23 (5) | 2.90 mm × 1.60 mm |