SLUSB33A May 2012 – December 2014 UCC27518 , UCC27519
PRODUCTION DATA.
The UCC27518 and UCC27519 single-channel, high-speed, low-side gate driver device can effectively drive MOSFET and IGBT power switches. Using a design that inherently minimizes shoot-through current, UCC27518 and UCC27519 can source and sink high, peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay typically 17 ns.
The UCC27518 and UCC27519 provide 4-A source, 4-A sink (symmetrical drive) peak-drive current capability at VDD = 12 V.
The UCC27518 and UCC27519 are designed to operate over a wide VDD range of 4.5 V to 18 V and a wide temperature range of –40°C to 140°C. Internal under voltage lockout (UVLO) circuitry on the VDD pin holds output low outside VDD operating range. The capability to operate at low voltage levels such as below 5 V, along with best-in-class switching characteristics, is especially suited for driving emerging wide band-gap power switching devices such as GaN power semiconductor devices.
PART NUMBER | PACKAGE | BODY SIZE (NOM) |
---|---|---|
UCC27518 | SOT-23 (5) | 2.90 mm × 1.60 mm |
UCC27519 |