SNVSA88 Data sheet

SNVSA88C December 2014 – November 2016 UCC28063A

PRODUCTION DATA.

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Mechanical Data (Package|Pins)

D|16
- MPDS178G

Thermal pad, mechanical data (Package|Pins)

Orderable Information

7 Specifications

7.1 Absolute Maximum Ratings⁽¹⁾

All voltages are with respect to GND, −40 °C < T_J = T_A < 125 °C, currents are positive into and negative out of the specified terminal, unless otherwise noted.

			MIN	MAX	UNIT
	Continuous input voltage range	VCC⁽²⁾	−0.5	21	V
		PWMCNTL	−0.5	20
		COMP⁽³⁾, PHB, HVSEN⁽⁴⁾, VINAC⁽⁴⁾, VSENSE⁽⁴⁾	–0.5	7
		ZCDA, ZCDB	–0.5	4
		CS⁽⁵⁾	–0.5	3
		GDA, GDB⁽⁶⁾	–0.5	VCC+0.3
	Continuous input current	VCC		20	mA
		PWMCNTL		10
		ZCDA, ZCDB		±5
	Peak input current	CS		–30
	Output current	VREF		–10
	Continuous gate current	GDA, GDB⁽⁶⁾		±25
T_J	Junction Temperature	Operating	–40	125	°C
T_J	Junction Temperature	Storage	–65	150
T_SOL	Lead Temperature	Soldering, 10s		260
T_stg	Storage temperature		–40	125

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those included under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods of time may affect device reliability.

(2) Voltage on VCC is internally clamped. VCC may exceed the continuous absolute maximum input voltage rating if the source is current limited below the absolute maximum continuous VCC input current level.

(3) In normal use, COMP is connected to capacitors and resistors and is internally limited in voltage swing.

(4) In normal use, VINAC, VSENSE, and HVSEN are connected to high-value resistors and are internally limited in negative-voltage swing. Although not recommended for extended use, VINAC, VSENSE, and HVSEN can survive input currents as high as -10mA from negative voltage sources, and input currents as high as +0.5mA from positive voltage sources.

(5) In normal use, CS is connected to a series resistor to limit peak input current during brief system line-inrush conditions. In these situations, negative voltage on CS may exceed the continuous absolute maximum rating.

(6) No GDA or GDB current limiting is required when driving a power MOSFET gate. However, a small series resistor may be required to damp resonant ringing due to stray inductance.

7.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2000	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±500	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

All voltages are with respect to GND, −40 °C < T_J = T_A < 125 °C, currents are positive into and negative out of the specified terminal, unless otherwise noted.

	MIN	MAX	UNIT
VCC input voltage from a low-impedance source	14	21	V
VCC input current from a high-impedance source	8	18	mA
VREF load current	0	–2	mA
VINAC input voltage	0	6	V
ZCDA, ZCDB series resistor	20	80	kΩ
TSET resistor to program PWM on-time	66.5	400	kΩ
HVSEN input voltage	0.8	4.5	V

7.4 Thermal Information

THERMAL METRIC⁽¹⁾		UCC28063A	UNIT
		SOIC (D)
		16 PINS
R_θJA	Junction-to-ambient thermal resistance⁽²⁾	91.6	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance⁽³⁾	52.1
R_θJB	Junction-to-board thermal resistance⁽⁴⁾	48.6
ψ_JT	Junction-to-top characterization parameter⁽⁵⁾	14.9
ψ_JB	Junction-to-board characterization parameter⁽⁶⁾	48.3

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report (SPRA953).

(2) The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as specified in JESD51-7, in an environment described in JESD51-2a.

(3) The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific JEDEC-standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.

(4) The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB temperature, as described in JESD51-8.

(5) The junction-to-top characterization parameter, ψ_JT, estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining R_θJA, using a procedure described in JESD51-2a (sections 6 and 7).

(6) The junction-to-board characterization parameter, ψ_JB, estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining R_θJA, using a procedure described in JESD51-2a (sections 6 and 7).

7.5 Electrical Characteristics

At VCC = 16 V, AGND = PGND = 0 V, VINAC = 3 V, VSENSE = 6 V, HVSEN = 3 V, PHB = 5 V, R_TSET = 133 kΩ, all voltages are with respect to GND, all outputs unloaded, −40 °C < T_J = T_A < 125 °C, and currents are positive into and negative out of the specified terminal, unless otherwise noted.

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
VCC BIAS SUPPLY
VCC_SHUNT	VCC shunt voltage⁽¹⁾	I_VCC = 10 mA	22	24	26	V
I_VCC(ULVO)	VCC current, UVLO	VCC = 11.4 V prior to turn-on		95	200	µA
I_VCC(stby)	VCC current, disabled	VSENSE = 0 V		100	200	µA
I_VCC(on)	VCC current, enabled	VSENSE = 2 V		5	8	mA
UNDERVOLTAGE LOCKOUT (UVLO)
VCC_ON	VCC turn-on threshold	VCC rising	11.5	12.6	13.5	V
VCC_OFF	VCC turn-off threshold	VCC falling	9.5	10.35	11.5
	UVLO Hysteresis		1.85	2.15	2.45
REFERENCE
V_REF	VREF output voltage, no load	I_VREF = 0 mA	5.82	6.00	6.18	V
	VREF change with load	0 mA ≤ I_VREF ≤ −2 mA		−1	−6	mV
	VREF change with VCC	12 V ≤ VCC ≤ 20 V		2	10	mV
ERROR AMPLIFIER
VSENSEreg25	VSENSE input regulation voltage	T_A = 25 °C	5.85	6	6.15	V
VSENSEreg	VSENSE input regulation voltage		5.82	6	6.18	V
I_VSENSE	VSENSE input bias current	In regulation	50	100	150	nA
V_ENAB	VSENSE enable threshold, rising		1.15	1.25	1.35	V
	VSENSE enable hysteresis		0.02	0.07	0.15
V_COMPCLMP	COMP high voltage, clamped	VSENSE = VSENSEreg – 0.3 V	4.70	4.95	5.10
	COMP low voltage, saturated	VSENSE = VSENSEreg + 0.3 V		0.03	0.125
g_M	VSENSE to COMP transconductance, small signal	0.99(VSENSEreg) < VSENSE < 1.01(VSENSEreg), COMP = 3 V	40	55	70	µS
	VSENSE high-going threshold to enable COMP large signal gain, percent	Relative to VSENSEreg, COMP = 3 V	3.25%	5%	6.75%
	VSENSE low-going threshold to enable COMP large signal gain, percent	Relative to VSENSEreg, COMP = 3 V	−3.25%	−5%	−6.75%
	VSENSE to COMP transconductance, large signal	VSENSE = VSENSEreg – 0.4 V , COMP = 3 V	210	290	370	µS
	VSENSE to COMP transconductance, large signal	VSENSE = VSENSEreg + 0.4 V, COMP = 3 V	210	290	370	µS
	COMP maximum source current	VSENSE = 5 V, COMP = 3 V	−80	−125	−170	µA
R_COMPDCHG	COMP discharge resistance	HVSEN = 5.2 V, COMP = 3 V	1.6	2	2.4	kΩ
I_DODCHG	COMP discharge current during Dropout	VSENSE = 5 V, VINAC = 0.3 V	3.2	4	4.8	µA
V_{LOW_OV}	VSENSE over-voltage threshold, rising	Relative to VSENSEreg	7%	8%	10%
	VSENSE over-voltage hysteresis	Relative to V_{LOW_OV}	−1.5%	−2%	−3%
V_{HIGH_OV}	VSENSE 2nd over-voltage threshold, rising	Relative to VSENSEreg	10.5%	11.3%	14%
SOFT START
V_SSTHR	COMP Soft-Start threshold, falling	VSENSE = 1.5 V	15	23	30	mV
I_SS,FAST	COMP Soft-Start current, fast	SS-state, V_ENAB < VSENSE < VREF/2	−80	−125	−170	µA
I_SS,SLOW	COMP Soft-Start current, slow	SS-state, VREF/2 < VSENSE < 0.88VREF	−11.5	−16	−20	µA
K_EOSS	VSENSE End-of-Soft-Start threshold factor	Percent of VSENSEreg	96.5%	98.3%	99.8%
OUTPUT MONITORING
V_PWMCNTL	HVSEN threshold to PWMCNTL	HVSEN rising	2.35	2.50	2.65	V
I_HVSEN	HVSEN input bias current, high	HVSEN = 3 V		±0.03	±0.5	µA
I_{HV_HYS}	HVSEN hysteresis bias current, low	HVSEN = 2 V	9.2	11.4	14	µA
V_{HV_OV_FLT}	HVSEN threshold to over-voltage fault	HVSEN rising	4.64	4.87	5.1	V
V_{HV_OV_CLR}	HVSEN threshold to over-voltage clear	HVSEN falling	4.45	4.67	4.8
V_{COMP_PHFOFF}	Phase Fail monitoring-disable threshold	COMP falling	0.21	0.225	0.25
V_{COMP_PHFHYS}	Phase Fail monitoring hysteresis	COMP rising		0.051
	PWMCNTL output voltage low	HVSEN = 3 V, I_PWMCNTL = 5 mA, COMP = 0 V		0.2	0.5
t_PHFDLY	Phase Fail filter time to PWMCNTL high	PHB = 5 V, ZCDA switching, ZCDB = 0.5 V, COMP = 3 V	7.9	12	17	ms
I_{PWMCNTL_LEAK}	PWMCNTL leakage current, high	HVSEN = 2 V, PWMCNTL = 15 V		±0.03	±0.5	µA
GATE DRIVE⁽²⁾
	GDA, GDB output voltage, high	I_GDA, I_GDB = −100 mA	11.5	12.4	15	V
	GDA, GDB on-resistance, high	I_GDA, I_GDB = −100 mA		8.8	14	Ω
	GDA, GDB output voltage, low	I_GDA, I_GDB = 100 mA		0.18	0.32	V
	GDA, GDB on-resistance, low	I_GDA, I_GDB = 100 mA		2	3.2	Ω
	GDA, GDB output voltage high, clamped	VCC = 20 V, I_GDA, I_GDB = −5 mA	12	13.5	15	V
	GDA, GDB output voltage high, low VCC	VCC = 12 V, I_GDA, I_GDB = −5 mA	10	10.5	11.5	V
	Rise time	1 V to 9 V, C_LOAD = 1 nF		18	30	ns
	Fall time	9 V to 1 V, C_LOAD = 1 nF		12	25	ns
	GDA, GDB output voltage, UVLO	VCC = 3.0 V, I_GDA, I_GDB = 2.5 mA		100	200	mV
ZERO CURRENT DETECTOR
	ZCDA, ZCDB voltage threshold, falling		0.8	1	1.2	V
	ZCDA, ZCDB voltage threshold, rising		1.5	1.7	1.9
	ZCDA, ZCDB clamp, high	I_ZCDA = +2 mA, I_ZCDB = +2 mA	2.6	3	3.4
	ZCDA, ZCDB clamp, low	I_ZCDA = −2 mA, I_ZCDB = −2 mA	0	−0.2	−0.4
	ZCDA, ZCDB input bias current	ZCDA = 1.4 V, ZCDB = 1.4 V		±0.03	±0.5	µA
	ZCDA, ZCDB delay to GDA, GDB outputs⁽²⁾	From ZCDx input falling to 1 V to respective gate drive output rising 10%		50	100	ns
	ZCDA blanking time⁽³⁾	From GDA rising and GDA falling		100
	ZCDB blanking time⁽³⁾	From GDB rising and GDB falling		100
CURRENT SENSE
	CS input bias current, dual-phase	At rising threshold	−120	−166	−200	µA
	CS current-limit rising threshold, dual-phase	PHB = 5 V	−0.18	−0.2	−0.22	V
	CS current-limit rising threshold, single-phase	PHB = 0 V	−0.149	−0.166	−0.183
	CS current-limit reset falling threshold		−0.003	–0.015	−0.025
	CS current-limit response time⁽²⁾	From CS exceeding threshold−0.05 V to GDx dropping 10%		60	100	ns
	CS blanking time	From GDx rising and falling edges		100		ns
VINAC INPUT
I_VINAC	VINAC input bias current, above brownout	VINAC = 2 V		±0.03	±0.5	µA
V_BODET	VINAC brownout detection threshold	VINAC falling	1.33	1.39	1.44	V
t_BODLY	VINAC brownout filter time	VINAC below the brownout detection threshold for the brownout filter time	340	440	540	ms
V_BOHYS	VINAC brownout threshold hysteresis	VINAC rising	30	62	75	mV
I_BOHYS	VINAC brownout hysteresis current	VINAC = 1 V for > t_BODLY	1.6	2	2.5	µA
V_DODET	VINAC dropout detection threshold	VINAC falling	0.315	0.35	0.38	V
t_DODLY	VINAC dropout filter time	VINAC below the dropout detection threshold for the dropout filter time	3.5	5	7	ms
V_DOCLR	VINAC dropout clear threshold	VINAC rising	0.67	0.71	0.75	V
PULSE-WIDTH MODULATOR
K_T	On-time factor, phases A and B	VSENSE = 5.8 V⁽⁴⁾	3.6	4.0	4.4	µs/V
K_TS	On-time factor, single-phase, A	VSENSE = 5.8 V, PHB = 0 V⁽⁴⁾	7.2	8.0	8.9	µs/V
	Phase B to phase A on-time matching error	VSENSE = 5.8 V		±2%	±6%
	Zero-crossing distortion correction additional on time	COMP = 0.25 V, VINAC = 1 V	1.2	2	2.8	µs
	Zero-crossing distortion correction additional on time	COMP = 0.25 V, VINAC = 0.1 V	12.6	20	29	µs
V_PHBF	PHB threshold falling, to single-phase operation	To GDB output shutdown, VINAC = 1.5 V	0.7	0.8	0.9	V
V_PHBR	PHB threshold rising, to two-phase operation	To GDB output running, VINAC = 1.5 V	0.9	1	1.1	V
T_MIN	Minimum switching period	R_TSET = 133 kΩ⁽⁴⁾	1.7	2.2	3	µs
T_START	PWM restart time	ZCDA = ZCDB = 2 V⁽⁵⁾	165	210	265	µs
THERMAL SHUTDOWN
T_J	Thermal shutdown temperature	Temperature rising⁽⁶⁾		160		°C
T_J	Thermal restart temperature	Temperature falling⁽⁶⁾		140		°C

(1) Excessive VCC input voltage and current will damage the device. This clamp will not protect the device from an unregulated bias supply. If an unregulated bias supply is used, a series-connected Fixed Positive-Voltage Regulator such as the UA78L15A is recommended. See the Absolute Maximum Ratings table for the limits on VCC voltage, current, and junction temperature.

(2) Refer to Figure 13, Figure 14, Figure 15, and Figure 16 of the Typical Characteristics for typical gate drive waveforms.

(3) ZCD blanking times are ensured by design.

(4) Gate drive on-time is proportional to (V_COMP – 0.125 V). The on-time proportionality factor, K_T, scales linearly with the value of R_TSET and is different in two-phase and single-phase modes. The minimum switching period is proportional to R_TSET.

(5) An output on-time is generated at both GDA and GDB if both ZCDA and ZCDB negative-going edges are not detected for the restart time. In single-phase mode, the restart time applies for the ZCDA input and the GDA output.

(6) Thermal shutdown occurs at temperatures higher than the normal operating range. Device performance above the normal operating temperature is not specified or assured.

7.6 Typical Characteristics

At VCC = 16 V, AGND = PGND = 0 V, VINAC = 3 V, VSENSE = 6 V, HVSEN = 3 V, PHB = 5 V, R_TSET = 133 kΩ; all voltages are with respect to GND, all outputs unloaded, T_J = T_A = +25 °C, and currents are positive into and negative out of the specified terminal, unless otherwise noted.