SGLS245E May   2020  – May 2020 UCC2813-0-Q1 , UCC2813-1-Q1 , UCC2813-2-Q1 , UCC2813-3-Q1 , UCC2813-4-Q1 , UCC2813-5-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Block Diagram
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Detailed Pin Descriptions
        1. 8.3.1.1 COMP
        2. 8.3.1.2 CS
        3. 8.3.1.3 FB
        4. 8.3.1.4 GND
        5. 8.3.1.5 OUT
        6. 8.3.1.6 RC
        7. 8.3.1.7 REF
        8. 8.3.1.8 VCC
      2. 8.3.2  Undervoltage Lockout (UVLO)
      3. 8.3.3  Self-Biasing, Active Low Output
      4. 8.3.4  Reference Voltage
      5. 8.3.5  Oscillator
      6. 8.3.6  Synchronization
      7. 8.3.7  PWM Generator
      8. 8.3.8  Minimum Off-Time Adjustment (Dead-Time Control)
      9. 8.3.9  Leading Edge Blanking
      10. 8.3.10 Minimum Pulse Width
      11. 8.3.11 Current Limiting
      12. 8.3.12 Overcurrent Protection and Full-Cycle Restart
      13. 8.3.13 Soft Start
      14. 8.3.14 Slope Compensation
    4. 8.4 Device Functional Modes
      1. 8.4.1 Normal Operation
      2. 8.4.2 UVLO Mode
      3. 8.4.3 Soft-Start Mode
      4. 8.4.4 Fault Mode
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1  Bulk Capacitor Calculation
        2. 9.2.2.2  Transformer Design
        3. 9.2.2.3  MOSFET and Output Diode Selection
        4. 9.2.2.4  Output Capacitor Calculation
        5. 9.2.2.5  Current Sensing Network
        6. 9.2.2.6  Gate Drive Resistor
        7. 9.2.2.7  REF Bypass Capacitor
        8. 9.2.2.8  RT and CT
        9. 9.2.2.9  Start-Up Circuit
        10. 9.2.2.10 Voltage Feedback Compensation Procedure
          1. 9.2.2.10.1 Power Stage Gain, Zeroes, and Poles
          2. 9.2.2.10.2 Compensating the Loop
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Related Links
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Community Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • D|8
  • PW|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

9.2.2.6 Gate Drive Resistor

RG is the gate driver resistor for the power switch, QA. The selection of this resistor value must be done in conjunction with EMI compliance testing and efficiency testing. Larger RG slows down the turn-on and turn-off of the MOSFET. Slower switching speed reduces EMI but also increases the switching loss. A tradeoff between switching loss and EMI performance must be carefully performed. For this design, 10 Ω was chosen as the gate driver resistor.