11 Device and Documentation Support
11.1 Device Support
11.1.1 Device Nomenclature
11.1.1.1 Definition of Terms
11.1.1.1.1 Capacitance Terms in Farads
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CBULK: total input capacitance of CB1 and CB2.
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CDD: minimum required capacitance on the VDD pin.
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COUT: minimum output capacitance required.
11.1.1.1.2 Duty Cycle Terms
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DMAGCC: secondary diode conduction duty cycle in CC, 0.425.
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DMAX: transistor on-time duty cycle.
11.1.1.1.3 Frequency Terms in Hertz
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fLINE: minimum line frequency.
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fMAX: target full-load maximum switching frequency of the converter.
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fMIN: minimum switching frequency of the converter, add 15% margin over the fSW(min) limit of the device.
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fSW(min): minimum switching frequency (see Electrical Characteristics).
11.1.1.1.4 Current Terms in Amperes
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IOCC: converter output constant-current target.
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IPP(max): maximum transformer primary current.
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ISTART: start-up bias supply current (see Electrical Characteristics).
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ITRAN : required positive load-step current.
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IVSL(run): VS pin run current (see Electrical Characteristics).
11.1.1.1.5 Current and Voltage Scaling Terms
11.1.1.1.6 Transformer Terms
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LP: transformer primary inductance.
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NAS: transformer auxiliary-to-secondary turns ratio.
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NPA: transformer primary-to-auxiliary turns ratio.
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NPS: transformer primary-to-secondary turns ratio.
11.1.1.1.7 Power Terms in Watts
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PIN: converter maximum input power.
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POUT: full-load output power of the converter.
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PRSTR: VDD start-up resistor power dissipation.
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PSB: total stand-by power.
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PSB_CONV: PSB minus start-up resistor and snubber losses.
11.1.1.1.8 Resistance Terms in Ω
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RCS: primary current programming resistance.
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RESR: total ESR of the output capacitor(s).
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RPL: preload resistance on the output of the converter.
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RS1: high-side VS pin resistance.
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RS2: low-side VS pin resistance.
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RSTR : startup resistance.
11.1.1.1.9 Timing Terms in Seconds
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tD: current-sense delay including transistor turnoff delay; add 50 ns to transistor delay.
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tDMAG(min): minimum secondary rectifier conduction time.
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tON(min): minimum transistor on time.
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tR: resonant frequency during the DCM (discontinuous conduction mode) time.
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tST: startup time
11.1.1.1.10 Voltage Terms in Volts
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VBLK: highest bulk capacitor voltage for stand-by power measurement.
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VBULK(min): minimum voltage on CB1 and CB2 at full power.
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VOCBC: target cable compensation voltage at the output terminals.
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VCBC(max): maximum voltage at the CBC pin at the maximum converter output current (see Electrical Characteristics).
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VCCR: constant-current regulating voltage (see Electrical Characteristics).
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VCST(max): CS pin maximum current-sense threshold (see Electrical Characteristics).
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VCST(min): CS pin minimum current-sense threshold (see Electrical Characteristics).
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VDD(off): UVLO turnoff voltage (see Electrical Characteristics).
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VDD(on): UVLO turnon voltage (see Electrical Characteristics).
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VOΔ: output voltage drop allowed during the load-step transient.
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VCPK: peak transistor collector to emitter voltage at high line.
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VF: secondary rectifier forward voltage drop at near-zero current.
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VFA: auxiliary rectifier forward voltage drop.
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VLK: estimated leakage inductance energy reset voltage.
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VOCV: regulated output voltage of the converter.
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VOCC: target lowest converter output voltage in constant-current regulation.
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VREV: peak reverse voltage on the secondary rectifier.
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VRIPPLE: output peak-to-peak ripple voltage at full-load.
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VVSR: CV regulating level at the VS input (see Electrical Characteristics).
11.1.1.1.11 AC Voltage Terms in VRMS
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VIN(max): maximum input voltage to the converter.
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VIN(min): minimum input voltage to the converter.
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VIN(run): converter input start-up (run) voltage.
11.1.1.1.12 Efficiency Terms
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ηSB: estimated efficiency of the converter at no-load condition, not including start-up resistance or bias losses. ηSB: For a 5-V USB charger application, 60% to 65% is a good initial estimate.
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η: converter overall efficiency.
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ηXFMR: transformer primary-to-secondary power transfer efficiency.
11.2 Documentation Support
11.2.1 Related Documentation
See the following: UCC28722/UCC28720 5W USB BJT Flyback Design Example, SLUA700
11.3 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.
11.4 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.5 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
11.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.