SLUS157Q December   1999  – October 2019 UCC1895 , UCC2895 , UCC3895

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Application Diagram
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagrams
    3. 7.3 Feature Description
      1. 7.3.1  ADS (Adaptive Delay Set)
      2. 7.3.2  CS (Current Sense)
      3. 7.3.3  CT (Oscillator Timing Capacitor)
      4. 7.3.4  DELAB and DELCD (Delay Programming Between Complementary Outputs)
      5. 7.3.5  EAOUT, EAP, and EAN (Error Amplifier)
      6. 7.3.6  OUTA, OUTB, OUTC, and OUTD (Output MOSFET Drivers)
      7. 7.3.7  PGND (Power Ground)
      8. 7.3.8  RAMP (Inverting Input of the PWM Comparator)
      9. 7.3.9  REF (Voltage Reference)
      10. 7.3.10 RT (Oscillator Timing Resistor)
      11. 7.3.11 GND (Analog Ground)
      12. 7.3.12 SS/DISB (Soft Start/Disable)
      13. 7.3.13 SYNC (Oscillator Synchronization)
      14. 7.3.14 VDD (Chip Supply)
    4. 7.4 Device Functional Modes
    5. 7.5 Programming
      1. 7.5.1 Programming DELAB, DELCD and the Adaptive Delay Set
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1  Power Loss Budget
        2. 8.2.2.2  Preliminary Transformer Calculations (T1)
        3. 8.2.2.3  QA, QB, QC, QD FET Selection
        4. 8.2.2.4  Selecting LS
        5. 8.2.2.5  Selecting Diodes DB and DC
        6. 8.2.2.6  Output Inductor Selection (LOUT)
        7. 8.2.2.7  Output Capacitance (COUT)
        8. 8.2.2.8  Select Rectifier Diodes
        9. 8.2.2.9  Input Capacitance (CIN)
        10. 8.2.2.10 Current Sense Network (CT, RCS, RR, DA)
          1. 8.2.2.10.1 Output Voltage Setpoint
          2. 8.2.2.10.2 Voltage Loop Compensation
          3. 8.2.2.10.3 Setting the Switching Frequency
          4. 8.2.2.10.4 Soft Start
          5. 8.2.2.10.5 Setting the Switching Delays
          6. 8.2.2.10.6 Setting the Slope Compensation
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
      2. 11.1.2 Related Links
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Community Resource
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)(3)
MIN NOM MAX UNIT
VDD Supply voltage 10 16.5 V
VDD Supply voltage bypass capacitor(1) 10 × CREF µF
CREF Reference bypass capacitor (UCC1895)(2) 0.1 1 µF
CREF Reference bypass capacitor (UCC2895, UCC3895)(2) 0.1 4.7 µF
CT Timing capacitor (for 500-kHz switching frequency) 220 pF
RT Timing resistor (for 500-kHz switching frequency) 82 kΩ
RDEL_AB, RDEL_CD Delay resistor 2.5 40 kΩ
TJ Operating junction temperature(4) –55 125 °C
(1) The VDD capacitor must be a low ESR, ESL ceramic capacitor located directly across the VDD and PGND pins. A larger bulk capacitor must be located as physically close as possible to the VDD pins.
(2) The VREF capacitor must be a low ESR, ESL ceramic capacitor located directly across the REF and GND pins. If a larger capacitor is desired for the VREF then it must be located near the VREF cap and connected to the VREF pin with a resistor of 51 Ω or greater. The bulk capacitor on VDD must be a factor of 10 greater than the total VREF capacitance.
(3) TI recommends that there be a single point grounded between GND and PGND directly under the device. There must be a separate ground plane associated with the GND pin and all components associated with pins 1 through 12, plus 19 and 20, be located over this ground plane. Any connections associated with these pins to ground must be connected to this ground plane.
(4) TI does not recommended that the device operate under conditions beyond those specified in this table for extended periods of time.