SLUSA12G December   2009  – November 2022 UCC28C40-Q1 , UCC28C41-Q1 , UCC28C42-Q1 , UCC28C43-Q1 , UCC28C44-Q1 , UCC28C45-Q1

PRODUCTION DATA  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Detailed Pin Description
        1. 8.3.1.1 COMP
        2. 8.3.1.2 FB
        3. 8.3.1.3 CS
        4. 8.3.1.4 RT/CT
        5. 8.3.1.5 GND
        6. 8.3.1.6 OUT
        7. 8.3.1.7 VDD
        8. 8.3.1.8 VREF
      2. 8.3.2  Undervoltage Lockout
      3. 8.3.3  ±1% Internal Reference Voltage
      4. 8.3.4  Current Sense and Overcurrent Limit
      5. 8.3.5  Reduced-Discharge Current Variation
      6. 8.3.6  Oscillator Synchronization
      7. 8.3.7  Soft Start
      8. 8.3.8  Enable and Disable
      9. 8.3.9  Slope Compensation
      10. 8.3.10 Voltage Mode
    4. 8.4 Device Functional Modes
      1. 8.4.1 Normal Operation
      2. 8.4.2 UVLO Mode
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1  Custom Design With WEBENCH® Tools
        2. 9.2.2.2  Input Bulk Capacitor and Minimum Bulk Voltage
        3. 9.2.2.3  Transformer Turns Ratio and Maximum Duty CycleG
        4. 9.2.2.4  Transformer Inductance and Peak Currents
        5. 9.2.2.5  Output Capacitor
        6. 9.2.2.6  Current Sensing Network
        7. 9.2.2.7  Gate Drive Resistor
        8. 9.2.2.8  VREF Capacitor
        9. 9.2.2.9  RT/CT
        10. 9.2.2.10 Start-Up Circuit
        11. 9.2.2.11 Voltage Feedback Compensation
          1. 9.2.2.11.1 Power Stage Poles and Zeroes
          2. 9.2.2.11.2 Slope Compensation
          3. 9.2.2.11.3 Open-Loop Gain
          4. 9.2.2.11.4 Compensation Loop
      3. 9.2.3 Application Curves
      4. 9.2.4 Power Supply Recommendations
      5. 9.2.5 Layout
        1. 9.2.5.1 Layout Guidelines
          1. 9.2.5.1.1 Precautions
          2. 9.2.5.1.2 Feedback Traces
          3. 9.2.5.1.3 Bypass Capacitors
          4. 9.2.5.1.4 Compensation Components
          5. 9.2.5.1.5 Traces and Ground Planes
        2. 9.2.5.2 Layout Example
  10. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 Development Support
        1. 10.1.1.1 Custom Design With WEBENCH® Tools
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
    3. 10.3 Related Links
    4. 10.4 Support Resources
    5. 10.5 Trademarks
    6. 10.6 Electrostatic Discharge Caution
    7. 10.7 Glossary
  11. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Pin Configuration and Functions

Figure 6-1 D Package8-Pin SOICTop View
Table 6-1 Pin Functions
PIN I/O DESCRIPTION
NAME NO.
COMP 1 O This pin provides the output of the error amplifier for compensation. In addition, the COMP pin is frequently used as a control port, by utilizing a secondary-side error amplifier to send an error signal across the secondary-primary isolation boundary through an opto-isolator. The error amplifier is internally current limited so the user can command zero duty cycle by externally forcing COMP to GND.
CS 3 I Primary-side current sense pin. The current sense pin is the noninverting input to the PWM comparator. Connect to current sensing resistor. This signal is compared to a signal proportional to the error amplifier output voltage. The PWM uses this to terminate the OUT switch conduction. A voltage ramp can be applied to this pin to run the device with a voltage mode control configuration.
FB 2 I This pin is the inverting input to the error amplifier. FB is used to control the power converter voltage-feedback loop for stability. The noninverting input to the error amplifier is internally trimmed to 2.5 V ±1%.
GND 5 Ground return pin for the output driver stage and the logic level controller section.
OUT 6 O The output of the on-chip drive stage. OUT is intended to directly drive a MOSFET. The OUT pin in the UCC28C40-Q1, UCC28C42-Q1, and UCC28C43-Q1 is the same frequency as the oscillator, and can operate near 100% duty cycle. In the UCC28C41-Q1, UCC28C44-Q1, and UCC28C45-Q1, the frequency of OUT is one-half that of the oscillator due to an internal T flipflop. This limits the maximum duty cycle to < 50%. Peak currents of up to 1 A are sourced and sunk by this pin. OUT is actively held low when VDD is below the turnon threshold.
RT/CT 4 I/O Fixed frequency oscillator set point. Connect timing resistor (RRT) to VREF and timing capacitor (CCT) to GND from this pin to set the switching frequency. For best performance, keep the timing capacitor lead to the device GND as short and direct as possible. If possible, use separate ground traces for the timing capacitor and all other functions. The switching frequency (fSW) of the UCC28C40-Q1, UCC28C42-Q1, and UCC28C43-Q1 gate drive is equal to fOSC; the switching frequency of the UCC28C41-Q1, UCC28C44-Q1, and UCC28C45-Q1 is equal to half of the fOSC.
VDD 7 I Analog controller bias input that provides power to the device. Total VDD current is the sum of the quiescent VDD current and the average OUT current. A bypass capacitor, typically 0.1 µF, connected directly to GND with minimal trace length, is required on this pin. Additional capacitance at least 10 times greater than the gate capacitance of the main switching FET used in the design is also required on VDD.
VREF 8 O 5-V reference voltage. VREF is used to provide charging current to the oscillator timing capacitor through the timing resistor. It is important for reference stability that VREF is bypassed to GND with a ceramic capacitor connected as close to the pin as possible. A minimum value of 0.1 µF ceramic is required. Additional VREF bypassing is required for external loads on VREF.