SLUSE29F May   2020  – July 2024 UCC5350-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Description (continued)
  6. 5 Pin Configuration and Function
  7. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Power Ratings
    6. 6.6  Insulation Specifications for D Package
    7. 6.7  Insulation Specifications for DWV Package
    8. 6.8  Safety-Related Certifications For D Package
    9. 6.9  Safety-Related Certifications For DWV Package
    10. 6.10 Safety Limiting Values
    11. 6.11 Electrical Characteristics
    12. 6.12 Switching Characteristics
    13. 6.13 Insulation Characteristics Curves
    14. 6.14 Typical Characteristics
  8. 7 Parameter Measurement Information
    1. 7.1 Propagation Delay, Inverting, and Noninverting Configuration
      1. 7.1.1 CMTI Testing
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Power Supply
      2. 8.3.2 Input Stage
      3. 8.3.3 Output Stage
      4. 8.3.4 Protection Features
        1. 8.3.4.1 Undervoltage Lockout (UVLO)
        2. 8.3.4.2 Active Pulldown
        3. 8.3.4.3 Short-Circuit Clamping
        4. 8.3.4.4 Active Miller Clamp
    4. 8.4 Device Functional Modes
      1. 8.4.1 ESD Structure
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Designing IN+ and IN– Input Filter
        2. 9.2.2.2 Gate-Driver Output Resistor
        3. 9.2.2.3 Estimate Gate-Driver Power Loss
        4. 9.2.2.4 Estimating Junction Temperature
      3. 9.2.3 Selecting VCC1 and VCC2 Capacitors
        1. 9.2.3.1 Selecting a VCC1 Capacitor
        2. 9.2.3.2 Selecting a VCC2 Capacitor
        3. 9.2.3.3 Application Circuits with Output Stage Negative Bias
      4. 9.2.4 Application Curve
  11. 10Power Supply Recommendations
  12. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 PCB Material
  13. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Third-Party Products Disclaimer
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Certifications
    4. 12.4 Receiving Notification of Documentation Updates
    5. 12.5 Support Resources
    6. 12.6 Trademarks
    7. 12.7 Electrostatic Discharge Caution
    8. 12.8 Glossary
  14. 13Revision History
  15. 14Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5 Pin Configuration and Function

UCC5350-Q1 UCC5350MC-Q18-Pin SOICTop View Figure 5-1 UCC5350MC-Q18-Pin SOICTop View
UCC5350-Q1 UCC5350SB-Q1 8-Pin SOICTop View Figure 5-2 UCC5350SB-Q1 8-Pin SOICTop View
Table 5-1 Pin Functions
PIN TYPE(1) DESCRIPTION
NAME NO. NO.
UCC5350MC-Q1 UCC5350SB-Q1
CLAMP 7 — I Active Miller-clamp input used to prevent false turn-on of the power switches found on the 'M' version.
GND1 4 4 G Input ground. All signals on the input side are referenced to this ground.
IN+ 2 2 I Noninverting gate-drive voltage-control input. The IN+ pin has a CMOS input threshold. This pin is pulled low internally if left open. Use Table 8-4 to understand the input and output logic of these devices.
IN– 3 3 I Inverting gate-drive voltage control input. The IN– pin has a CMOS input threshold. This pin is pulled high internally if left open. Use Table 8-4 to understand the input and output logic of these devices.
OUT 6 — O Gate-drive output found on the 'M' version
OUTH — 6 O Gate-drive pullup output found on the 'S' version
OUTL — 7 O Gate-drive pulldown output found on the 'S' version
VCC1 1 1 P Input supply voltage. Connect a locally decoupled capacitor to GND1. Use a low-ESR or ESL capacitor located as close to the device as possible.
VCC2 5 5 P Positive output supply rail. Connect a locally decoupled capacitor to VEE2. Use a low-ESR or ESL capacitor located as close to the device as possible.
VEE2 8 8 G Ground pin. Connect to MOSFET source or IGBT emitter. Connect a locally decoupled capacitor from VCC2 to VEE2. Use a low-ESR or ESL capacitor located as close to the device as possible.
(1) P = Power, G = Ground, I = Input, O = Output