SLUSE29F May   2020  – July 2024 UCC5350-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Description (continued)
  6. 5 Pin Configuration and Function
  7. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Power Ratings
    6. 6.6  Insulation Specifications for D Package
    7. 6.7  Insulation Specifications for DWV Package
    8. 6.8  Safety-Related Certifications For D Package
    9. 6.9  Safety-Related Certifications For DWV Package
    10. 6.10 Safety Limiting Values
    11. 6.11 Electrical Characteristics
    12. 6.12 Switching Characteristics
    13. 6.13 Insulation Characteristics Curves
    14. 6.14 Typical Characteristics
  8. 7 Parameter Measurement Information
    1. 7.1 Propagation Delay, Inverting, and Noninverting Configuration
      1. 7.1.1 CMTI Testing
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Power Supply
      2. 8.3.2 Input Stage
      3. 8.3.3 Output Stage
      4. 8.3.4 Protection Features
        1. 8.3.4.1 Undervoltage Lockout (UVLO)
        2. 8.3.4.2 Active Pulldown
        3. 8.3.4.3 Short-Circuit Clamping
        4. 8.3.4.4 Active Miller Clamp
    4. 8.4 Device Functional Modes
      1. 8.4.1 ESD Structure
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Designing IN+ and IN– Input Filter
        2. 9.2.2.2 Gate-Driver Output Resistor
        3. 9.2.2.3 Estimate Gate-Driver Power Loss
        4. 9.2.2.4 Estimating Junction Temperature
      3. 9.2.3 Selecting VCC1 and VCC2 Capacitors
        1. 9.2.3.1 Selecting a VCC1 Capacitor
        2. 9.2.3.2 Selecting a VCC2 Capacitor
        3. 9.2.3.3 Application Circuits with Output Stage Negative Bias
      4. 9.2.4 Application Curve
  11. 10Power Supply Recommendations
  12. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 PCB Material
  13. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Third-Party Products Disclaimer
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Certifications
    4. 12.4 Receiving Notification of Documentation Updates
    5. 12.5 Support Resources
    6. 12.6 Trademarks
    7. 12.7 Electrostatic Discharge Caution
    8. 12.8 Glossary
  14. 13Revision History
  15. 14Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.3.4.2 Active Pulldown

The active pull-down function is used to pull the IGBT or MOSFET gate to the low state when no power is connected to the VCC2 supply. This feature prevents false IGBT and MOSFET turn-on on the OUT and CLAMP pins by clamping the output to approximately 2 V.

When the output stages of the driver are in an unbiased or UVLO condition, the driver outputs are held low by an active clamp circuit that limits the voltage rise on the driver outputs. In this condition, the upper PMOS is resistively held off by a pull-up resistor while the lower NMOS gate is tied to the driver output through a 500-kΩ resistor. In this configuration, the output is effectively clamped to the threshold voltage of the lower NMOS device, which is approximately 1.5 V when no bias power is available.