SLUSDR3B June   2019  – February 2024 UCC5390-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Function
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Power Ratings
    6. 5.6  Insulation Specifications for DWV Package
    7. 5.7  Safety-Related Certifications For DWV Package
    8. 5.8  Safety Limiting Values
    9. 5.9  Electrical Characteristics
    10. 5.10 Switching Characteristics
    11. 5.11 Insulation Characteristics Curves
    12. 5.12 Typical Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1 Propagation Delay, Inverting, and Noninverting Configuration
      1. 6.1.1 CMTI Testing
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Power Supply
      2. 7.3.2 Input Stage
      3. 7.3.3 Output Stage
      4. 7.3.4 Protection Features
        1. 7.3.4.1 Undervoltage Lockout (UVLO)
        2. 7.3.4.2 Active Pulldown
        3. 7.3.4.3 Short-Circuit Clamping
    4. 7.4 Device Functional Modes
      1. 7.4.1 ESD Structure
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Designing IN+ and IN– Input Filter
        2. 8.2.2.2 Gate-Driver Output Resistor
        3. 8.2.2.3 Estimate Gate-Driver Power Loss
        4. 8.2.2.4 Estimating Junction Temperature
      3. 8.2.3 Selecting VCC1 and VCC2 Capacitors
        1. 8.2.3.1 Selecting a VCC1 Capacitor
        2. 8.2.3.2 Selecting a VCC2 Capacitor
        3. 8.2.3.3 Application Circuits With Output Stage Negative Bias
      4. 8.2.4 Application Curve
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 PCB Material
  12. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Certifications
    4. 11.4 Receiving Notification of Documentation Updates
    5. 11.5 Support Resources
    6. 11.6 Trademarks
    7. 11.7 Electrostatic Discharge Caution
    8. 11.8 Glossary
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.2.3.3 Application Circuits With Output Stage Negative Bias

When parasitic inductances are introduced by nonideal PCB layout and long package leads (such as TO-220 and TO-247 type packages), ringing in the gate-source drive voltage of the power transistor could occur during high di/dt and dv/dt switching. If the ringing is over the threshold voltage, unintended turn-on and shoot-through could occur. Applying a negative bias on the gate drive is a popular way to keep such ringing below the threshold. A few examples of implementing negative gate-drive bias follow.

Figure 8-2 shows another example which uses two supplies (or single-input, double-output power supply). The power supply across VCC2 and GND2 determines the positive drive output voltage and the power supply across VEE2 and GND2 determines the negative turn-off voltage. This solution requires more power supplies than the first example, however, it provides more flexibility when setting the positive and negative rail voltages.

GUID-F405FEAF-8B6B-474F-9A69-7F1822EA086A-low.gifFigure 8-2 Negative Bias With Two Iso-Bias Power Supplies