SLUSDR3B June 2019 – February 2024 UCC5390-Q1
PRODUCTION DATA
The output stage of the UCC5390-Q1 features a pull-up structure that delivers the highest peak-source current when it is most needed which is during the Miller plateau region of the power-switch turn-on transition (when the power-switch drain or collector voltage experiences dV/dt). The output stage pull-up structure features a P-channel MOSFET and an additional pull-up N-channel MOSFET in parallel. The function of the N-channel MOSFET is to provide a brief boost in the peak-sourcing current, which enables fast turn-on. Fast turn-on is accomplished by briefly turning on the N-channel MOSFET during a narrow instant when the output is changing states from low to high. Table 7-1 lists the typical internal resistance values of the pull-up and pull-down structure.
DEVICE OPTION | RNMOS | ROH | ROL | UNIT |
---|---|---|---|---|
UCC5390-Q1 | 0.76 | 12 | 0.13 | Ω |
The ROH parameter is a DC measurement and is representative of the on-resistance of the P-channel device only. This parameter is only for the P-channel device, because the pull-up N-channel device is held in the OFF state in DC condition and is turned on only for a brief instant when the output is changing states from low to high. Therefore, the effective resistance of the UCC5390-Q1 pull-up stage during this brief turn-on phase is much lower than what is represented by the ROH parameter, which yields a faster turn-on. The turn-on-phase output resistance is the parallel combination ROH || RNMOS.
The pull-down structure in the UCC5390-Q1 is simply composed of an N-channel MOSFET. The output of the UCC5390-Q1 is capable of delivering, or sinking, 10-A peak current pulses. The output voltage swing between VCC2 and VEE2 provides rail-to-rail operation because of the MOS-out stage which delivers very low dropout.