SLUSDR3B June   2019  – February 2024 UCC5390-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Function
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Power Ratings
    6. 5.6  Insulation Specifications for DWV Package
    7. 5.7  Safety-Related Certifications For DWV Package
    8. 5.8  Safety Limiting Values
    9. 5.9  Electrical Characteristics
    10. 5.10 Switching Characteristics
    11. 5.11 Insulation Characteristics Curves
    12. 5.12 Typical Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1 Propagation Delay, Inverting, and Noninverting Configuration
      1. 6.1.1 CMTI Testing
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Power Supply
      2. 7.3.2 Input Stage
      3. 7.3.3 Output Stage
      4. 7.3.4 Protection Features
        1. 7.3.4.1 Undervoltage Lockout (UVLO)
        2. 7.3.4.2 Active Pulldown
        3. 7.3.4.3 Short-Circuit Clamping
    4. 7.4 Device Functional Modes
      1. 7.4.1 ESD Structure
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Designing IN+ and IN– Input Filter
        2. 8.2.2.2 Gate-Driver Output Resistor
        3. 8.2.2.3 Estimate Gate-Driver Power Loss
        4. 8.2.2.4 Estimating Junction Temperature
      3. 8.2.3 Selecting VCC1 and VCC2 Capacitors
        1. 8.2.3.1 Selecting a VCC1 Capacitor
        2. 8.2.3.2 Selecting a VCC2 Capacitor
        3. 8.2.3.3 Application Circuits With Output Stage Negative Bias
      4. 8.2.4 Application Curve
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 PCB Material
  12. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Certifications
    4. 11.4 Receiving Notification of Documentation Updates
    5. 11.5 Support Resources
    6. 11.6 Trademarks
    7. 11.7 Electrostatic Discharge Caution
    8. 11.8 Glossary
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

3 Description

The UCC5390-Q1 is a single-channel, isolated gate driver with 10A source and 10A sink peak current designed to drive MOSFETs, IGBTs, and SiC MOSFETs. The UCC5390-Q1 has its UVLO2 referenced to GND2, which facilitates bipolar supplies and optimizes SiC and IGBT switching behavior and robustness.

The UCC5390-Q1 is available in 8.5mm SOIC-8 (DWV) package and can support isolation voltage up to 5kVRMS. The input side is isolated from the output side with SiO2 capacitive isolation technology with longer than 40 years isolation barrier lifetime. With its high drive strength and true UVLO detection, this device is a good fit for driving IGBTs and SiC MOSFETs in applications such as on-board chargers and traction inverters.

Compared to an optocoupler, the UCC5390-Q1 has lower part-to-part skew, lower propagation delay, higher operating temperature, and higher CMTI.

Device Information
PART VERSION PACKAGE(1) BODY SIZE (NOM)
UCC5390-Q1 DWV (SOIC-8) 7.5mm × 5.85mm
(1) For all available packages, see Section 13.
GUID-3EBBC118-ED30-4F10-B44D-A4BFD966B7C3-low.gif Functional Block Diagram