SLUSFL3B June   2024  – October 2024 UCC57102 , UCC57108

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Thermal Information
    4. 5.4 Recommended Operating Conditions
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Timing Diagrams
    8. 5.8 Typical Characteristics
  7. Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Input Stage
      2. 6.3.2 Enable Function
      3. 6.3.3 Driver Stage
      4. 6.3.4 Desaturation (DESAT) Protection
      5. 6.3.5 Fault (FLT)
      6. 6.3.6 VREF
      7. 6.3.7 Thermal Shutdown
    4. 6.4 Device Functional Modes
  8. Applications and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 VDD Undervoltage Lockout
      3. 7.2.3 Application Curves
  9. Power Supply Recommendations
  10. Layout
    1. 9.1 Layout Guidelines
    2. 9.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Third-Party Products Disclaimer
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • D|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Application Information

High-current gate driver devices are required in switching power applications for a variety of reasons. To enable fast switching of power devices and reduce associated switching power losses, a powerful gate driver can be employed between the PWM output of controllers or signal isolation devices and the gates of the power semiconductor devices. Further, gate drivers are indispensable when sometimes it is just not feasible to have the PWM controller directly drive the gates of the switching devices. The situation is often encountered because the PWM signal from a digital controller or signal isolation device is often a 3.3-V or 5-V logic signal which is not capable of effectively turning on a power switch. Level-shifting circuitry is needed to boost the logic-level signal to the gate-drive voltage in order to fully turn on the power device and minimize conduction losses. Traditional buffer drive circuits based on NPN/PNP bipolar (or P- N-channel MOSFET) transistors in a totem-pole arrangement, being emitter follower configurations, prove inadequate for this because they lack level-shifting capability and low-drive voltage protection. Gate drivers effectively combine both the level-shifting, buffer drive, and UVLO functions. Gate drivers also find other needs such as minimizing the effect of switching noise by locating the high-current driver physically close to the power switch, driving gate-drive transformers and controlling floating power device gates, reducing power dissipation and thermal stress in controllers by moving gate charge power losses into itself.

The UCC5710x is very flexible in this role with a strong drive current capability and wide recommended supply voltage range of UVLO to 26 V. This allows the driver to be used in 5-V bias logic level very high frequency MOSFET applications, 12-V MOSFET applications, 20-V and -5-V (relative to source) SiC FET applications, 15-V and -8-V (relative to emitter) IGBT applications and many others.

These requirements, coupled with the need for low propagation delays and availability in compact, and low-inductance packages with good thermal capability, make gate driver devices such as the UCC5710x extremely important components in switching power combining benefits of high-performance, low cost, low component count, board space reduction and simplified system design.