SLUSF39A December 2022 – February 2024 UCC5880-Q1
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
The UCC5880-Q1 device is an isolated, highly configurable adjustable drive strength gate driver targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. Power transistor protections are included, such as shunt resistor based over-current, over-temperature (PTC, NTC, or diode), and DESAT detection, with selectable soft turn-off or two-level soft turn-off during these faults. An integrated 10-bit ADC enables monitoring of up to 2 analog inputs, VCC2, DESAT, and the gate driver temperature for enhanced system management. Diagnostics and detection functions are integrated to simplify the design of ASIL compliant systems. The parameters and thresholds for these features are configurable using the SPI, which allows the device to be used with nearly any SiC MOSFET or IGBT.
PART NUMBER | PACKAGE(1) | PACKAGE SIZE(2) | BODY SIZE (NOM) |
---|---|---|---|
UCC5880-Q1 | DFC (SSOP, 32) | 10.3mm × 10.3mm | 10.5mm x 7.5mm |