SLUSF39A December   2022  – February 2024 UCC5880-Q1

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Pin Configuration and Functions
  6. 5Power Supply Recommendations
    1. 5.1 VCC1
    2. 5.2 VCC2
    3. 5.3 VEE2
  7. 6Layout
    1. 6.1 Layout Guidelines
      1. 6.1.1 Component Placement
      2. 6.1.2 Grounding Considerations
      3. 6.1.3 High-Voltage Considerations
      4. 6.1.4 Thermal Considerations
    2. 6.2 Layout Example
  8. 7Device and Documentation Support
    1. 7.1 Device Support
      1. 7.1.1 Third-Party Products Disclaimer
    2. 7.2 Receiving Notification of Documentation Updates
    3. 7.3 Support Resources
    4. 7.4 Trademarks
    5. 7.5 Electrostatic Discharge Caution
    6. 7.6 Glossary
  9. 8Revision History
  10. 9Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DFC|32
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Grounding Considerations

  • It is essential to confine the high peak currents that charge and discharge the transistor gates to a minimal physical area. This decreases the loop inductance and minimize noise on the gate terminals of the transistors. The gate driver must be placed as close as possible to the transistors.
  • Ensure a small loop area/inductance between VCP and VCC2.
  • Analog signals measured with the integrated ADC on AI1 and AI2 pins must be effectively isolated from high gate switching currents in GND2 net. It is recommended to create Kelvin connections for these measurements to reduce impact of ground bounce caused by high di/dt in the gate drive loop.