SLUSG08 December   2024 UCC5881-Q1

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Device and Documentation Support
    1. 4.1 Device Support
      1. 4.1.1 Third-Party Products Disclaimer
    2. 4.2 Receiving Notification of Documentation Updates
    3. 4.3 Support Resources
    4. 4.4 Trademarks
    5. 4.5 Electrostatic Discharge Caution
    6. 4.6 Glossary
  6. 5Revision History
  7. 6Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DFC|32
Thermal pad, mechanical data (Package|Pins)
Orderable Information

3 Description

The UCC5881-Q1 device is an isolated, highly configurable adjustable drive strength gate driver targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. Power transistor protections are included, such as shunt resistor based over-current, over-temperature (PTC, NTC, or diode), and DESAT detection, with selectable soft turn-off or two-level soft turn-off during these faults. An integrated 10-bit ADC enables monitoring of up to 2 analog inputs, VCC2, DESAT, and the gate driver temperature for enhanced system management. Diagnostics and detection functions are integrated to simplify the design of ASIL compliant systems. The parameters and thresholds for these features are configurable using the SPI, which allows the device to be used with nearly any SiC MOSFET or IGBT.

Device Information
PART NUMBER PACKAGE(1) PACKAGE SIZE(2) BODY SIZE (NOM)
UCC5881-Q1 DFC (SSOP, 32) 10.3mm × 10.3mm 10.5mm x 7.5mm
(1) For all available packages, see the orderable addendum at the end of the data sheet.
(2) The package size (length × width) is a nominal value and includes pins, where applicable.
UCC5881-Q1 Simplified Schematic Simplified Schematic