SLRS064B June 2014 – August 2016 ULN2003B
PRODUCTION DATA.
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
VCC | Collector-emitter voltage | 50 | V | ||
Clamp diode reverse voltage(2) | 50 | V | |||
VI | Input voltage(2) | 30 | V | ||
Peak collector current(3)(4) | 500 | mA | |||
IOK | Output clamp current | 500 | mA | ||
Total emitter-terminal current | –2.5 | A | |||
TJ | Operating virtual junction temperature | 150 | °C | ||
Tstg | Storage temperature | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | 2000 | V |
Charged device model (CDM), per JEDEC specification JESD22-C101(2) | 500 |
MIN | MAX | UNIT | ||
---|---|---|---|---|
VCC | Supply Voltage | 0 | 50 | V |
TA | Operating free-air temperature | –40 | 105 | °C |
TJ | Junction Temperature | –40 | 125 | °C |
THERMAL METRIC(1) | ULN2003B | UNIT | |||
---|---|---|---|---|---|
PW (TSSOP) | D (SOIC) | N (PDIP) | |||
16 PINS | 16 PINS | 16 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 105.5 | 81.2 | 49.6 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 38.3 | 40 | 36.2 | °C/W |
RθJB | Junction-to-board thermal resistance | 50.9 | 38.6 | 29.2 | °C/W |
ψJT | Junction-to-top characterization parameter | 4.1 | 10.5 | 20.2 | °C/W |
ψJB | Junction-to-board characterization parameter | 50.3 | 38.3 | 29.5 | °C/W |
PARAMETER | TEST FIGURE | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|---|
VI(on) | On-state input voltage | Figure 19 | VCE = 2 V | IC = 200 mA | 2.4 | V | ||
IC = 250 mA | 2.7 | |||||||
IC = 300 mA | 3 | |||||||
VCE(sat) | Collector-emitter saturation voltage | Figure 18 | II = 250 μA, | IC = 100 mA | 0.9 | 1.1 | V | |
II = 350 μA, | IC = 200 mA | 1 | 1.3 | |||||
II = 500 μA, | IC = 350 mA | 1.2 | 1.6 | |||||
ICEX | Collector cutoff current | Figure 15 | VCE = 50 V, | II = 0 | 10 | μA | ||
VF | Clamp forward voltage | Figure 21 | IF = 350 mA | 1.7 | 2 | V | ||
II(off) | Off-state input current | Figure 16 | VCE = 50 V, | IC = 500 μA | 50 | 65 | μA | |
II | Input current | Figure 17 | VI = 3.85 V | 0.93 | 1.35 | mA | ||
IR | Clamp reverse current | Figure 20 | VR = 50 V | 50 | μA | |||
Ci | Input capacitance | VI = 0, | f = 1 MHz | 15 | 25 | pF |
PARAMETER | TEST FIGURE | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|---|
VI(on) | On-state input voltage | Figure 19 | VCE = 2 V | IC = 200 mA | 2.7 | V | ||
IC = 250 mA | 2.9 | |||||||
IC = 300 mA | 3 | |||||||
VCE(sat) | Collector-emitter saturation voltage | Figure 18 | II = 250 μA, | IC = 100 mA | 0.9 | 1.2 | V | |
II = 350 μA, | IC = 200 mA | 1 | 1.4 | |||||
II = 500 μA, | IC = 350 mA | 1.2 | 1.7 | |||||
ICEX | Collector cutoff current | Figure 15 | VCE = 50 V, | II = 0 | 20 | μA | ||
VF | Clamp forward voltage | Figure 21 | IF = 350 mA | 1.7 | 2.2 | V | ||
II(off) | Off-state input current | Figure 16 | VCE = 50 V, | IC = 500 μA | 30 | 65 | μA | |
II | Input current | Figure 17 | VI = 3.85 V | 0.93 | 1.35 | mA | ||
IR | Clamp reverse current | Figure 20 | VR = 50 V | 100 | μA | |||
Ci | Input capacitance | VI = 0, | f = 1 MHz | 15 | 25 | pF |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
tPLH | Propagation delay time, low- to high-level output | 0.25 | 1 | μs | |||
tPHL | Propagation delay time, high- to low-level output | 0.25 | 1 | μs | |||
VOH | High-level output voltage after switching | VS = 50 V, | IO ≈ 300 mA | VS – 20 | mV |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
tPLH | Propagation delay time, low- to high-level output | 1 | 10 | μs | |||
tPHL | Propagation delay time, high- to low-level output | 1 | 10 | μs | |||
VOH | High-level output voltage after switching | VS = 50 V, | IO ≈ 300 mA | VS – 50 | mV |
TA = 25ºC |
TA = 70ºC |
TA = 70ºC |
TA = 105ºC |
TA = 25ºC |
TA = 70ºC |
TA = 105ºC |
TA = 105ºC |