DATA SHEET
ULN2003V12 7-Channel Relay and Inductive Load Sink Driver
1 Features
- 7-Channel High Current Sink Drivers
- Supports Up to 20-V Output Pullup Voltage
- Low Output VOL of 0.6 V (Typical) With:
- 100-mA (Typical) Current Sink per Channel at 3.3-V Logic Input(1)
- 140-mA (Typical) Current Sink per Channel at 5-V Logic Input(1)
- Compatible to 3.3-V and 5-V Microcontrollers and Logic Interface
- Internal Free-Wheeling Diodes for Inductive Kick-Back Protection
- Input Pulldown Resistors Allows Tri-Stating the Input Driver
- Input RC-Snubber to Eliminate Spurious Operation in Noisy Environment
- Low Input and Output Leakage Currents
- ESD Protection Exceeds JESD 22:
- 2-kV HBM, 500-V CDM
1. Total current sink may be limited by the internal junction temperature, absolute maximum current levels, and so forth (seeElectrical Characteristics for details).
2 Applications
- Relay and Inductive Load Driver
- White Goods
- Factory and Home Automation
- Lamp and LED Displays
- Logic Level Shifter
3 Description
The ULN2003V12 device is a low-power upgrade of TI’s popular ULN2003 family of 7-channel Darlington transistor array. The ULN2003V12 sink driver features 7 low-output impedance drivers that minimize on-chip power dissipation. When driving a typical 12-V relay coil, a ULN2003V12 can dissipate up to 12 times lower power than an equivalent ULN2003A. The ULN2003V12 driver is pin-to-pin compatible with ULN2003 family of devices.
The ULN2003V12 supports 3.3-V to 5-V CMOS logic input interface thus making it compatible to a wide range of microcontrollers and other logic interfaces. The ULN2003V12 also supports other logic input levels, like TTL or 1.8 V. Each output of the ULN2003V12 features an internal free-wheeling diode connected in a common-cathode configuration at the COM pin.
The ULN2003V12 provides flexibility of increasing current sink capability through combining several adjacent channels in parallel. Under typical conditions the ULN2003V12 can support up to 1 A of load current when all 7-channels are connected in parallel.
Device Information(1)
| PART NUMBER | PACKAGE | BODY SIZE (NOM) |
|---|---|---|
| ULN2003V12D | SOIC (16) | 9.90 mm × 3.91 mm |
| ULN2003V12PW | TSSOP (16) | 5.00 mm × 4.40 mm |
- For all available packages, see the orderable addendum at the end of the data sheet.
Functional Diagram
4 Revision History
Changes from B Revision (November 2012) to C Revision
- Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information sectionGo
- Changed θJA values From: 75°C/W To: 104.8°C/W (D) and From: 95°C/W To: 130.6°C/W (PW)Go
- Changed θJC values From: 46°C/W To: 63.7°C/W (D) and From: 49°C/W To: 62.7°C/W (PW)Go
Changes from A Revision (July 2012) to B Revision
- Added Details to Switching ParametersGo
5 Pin Configuration and Functions
D and PW Packages
16-Pin SOIC and TSSOP
Top View
Pin Functions
| PIN | I/O(1) | DESCRIPTION | |
|---|---|---|---|
| NO. | NAME | ||
| 1 | IN1 | I | Channel 1 input |
| 2 | IN2 | I | Channel 2 input |
| 3 | IN3 | I | Channel 3 input |
| 4 | IN4 | I | Channel 4 input |
| 5 | IN5 | I | Channel 5 input |
| 6 | IN6 | I | Channel 6 input |
| 7 | IN7 | I | Channel 7 input |
| 8 | GND | — | Supply ground |
| 9 | COM | — | Common cathode node for flyback diodes (required for inductive loads) |
| 10 | OUT7 | O | Channel 7 output |
| 11 | OUT6 | O | Channel 6 output |
| 12 | OUT5 | O | Channel 5 output |
| 13 | OUT4 | O | Channel 4 output |
| 14 | OUT3 | O | Channel 3 output |
| 15 | OUT2 | O | Channel 2 output |
| 16 | OUT1 | O | Channel 1 output |
(1) I = Input and O = Output
6 Specifications
6.1 Absolute Maximum Ratings
Specified at TJ = –40°C to 125°C (unless otherwise noted)(1)| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| Pins IN1 – IN7 to GND voltage, VIN | –0.3 | 5.5 | V | |
| Pins OUT1 – OUT7 to GND voltage, VOUT | 20 | V | ||
| Pin COM to GND voltage, VCOM | 20 | V | ||
| Maximum GND-pin continuous current, IGND | 100ºC < TJ < 125°C | 700 | mA | |
| TJ < 100°C | 1 | A | ||
| Operating virtual junction temperature, TJ | –55 | 150 | °C | |
| Storage temperature, Tstg | –55 | 150 | °C | |
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
| VALUE | UNIT | |||
|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
| Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±500 | |||
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)| MIN | MAX | UNIT | |||
|---|---|---|---|---|---|
| VOUT | Channel off-state output pullup voltage | 16 | V | ||
| VCOM | COM pin voltage | 16 | V | ||
| IOUT(ON)(1) | Per channel continuous sink current | VINx = 3.3 V | 100(1) | mA | |
| VINx = 5 V | 140(1) | ||||
| TJ | Operating junction temperature | –40 | 125 | ºC | |
(1) See Absolute Maximum Ratings for TJ dependent absolute maximum GND-pin current.
6.4 Thermal Information
| THERMAL METRIC(1) | ULN2003V12 | UNIT | ||
|---|---|---|---|---|
| D (SOIC) | PW (TSSOP) | |||
| 16 PINS | 16 PINS | |||
| RθJA | Junction-to-ambient thermal resistance | 104.8 | 130.6 | °C/W |
| RθJC(top) | Junction-to-case (top) thermal resistance | 63.7 | 62.7 | °C/W |
| RθJB | Junction-to-board thermal resistance | 62.3 | 76.1 | °C/W |
| ψJT | Junction-to-top characterization parameter | 27.1 | 15.9 | °C/W |
| ψJB | Junction-to-board characterization parameter | 62.1 | 75.5 | °C/W |
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.
6.5 Electrical Characteristics
Typical values are at TJ = 25°C, minimum and maximum values over the recommended junction temperature rangeTJ = –40°C to 125°C, and over recommended operating conditions (unless otherwise noted)
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| INPUTS IN1 THROUGH IN7 PARAMETERS | ||||||
| VI(ON) | IN1–IN7 logic high input voltage | Vpullup = 3.3 V, Rpullup = 1 kΩ, IOUTX = 3.2 mA | 1.65 | V | ||
| VI(OFF) | IN1–IN7 logic low input voltage | Vpullup = 3.3 V, Rpullup = 1 kΩ, IOUTX < 20 µA | 0.6 | |||
| II(ON) | IN1–IN7 ON state input current | Vpullup = 12 V, VINx = 3.3 V | 12 | 25 | µA | |
| II(OFF) | IN1–IN7 OFF state input leakage | Vpullup = 12 V, VINx = 0 V | 250 | nA | ||
| OUTPUTS OUT1 THROUGH OUT7 PARAMETERS | ||||||
| VOL(VCE-SAT) | OUT1–OUT7 low-level output voltage | VINX = 3.3 V, IOUTX = 20 mA | 0.12 | 0.15 | V | |
| VINX = 3.3 V, IOUTX = 100 mA | 0.6 | 0.75 | ||||
| VINX = 5 V, IOUTX = 20 mA | 0.09 | 0.11 | ||||
| VINX = 5 V, IOUTX = 140 mA | 0.6 | 0.75 | ||||
| IOUT(ON) | OUT1–OUT7 ON-state continuous current at VOUTX = 0.6 V(1)(2) | VINX = 3.3 V, VOUTX = 0.6 V | 80 | 100 | mA | |
| VINX = 5 V, VOUTX = 0.6 V | 95 | 140 | ||||
| IOUT(OFF)(ICEX) | OUT1–OUT7 OFF-state leakage current | VINX = 0 V, VOUTX = VCOM = 16 V | 0.5 | µA | ||
| SWITCHING PARAMETERS(3)(5) | ||||||
| tPHL | OUT1–OUT7 logic high propagation delay | VINX = 3.3 V, Vpullup = 12 V, Rpullup = 1 kΩ | 50 | 70 | ns | |
| tPLH | OUT1–OUT7 logic low propagation delay | VINX = 3.3V, Vpullup = 12 V, Rpullup = 1 kΩ | 121 | 140 | ns | |
| t CHANNEL | Channel-to-channel delay | Over recommended operating conditions and with same test conditions on channels. | 15 | 50 | ns | |
| RPD | IN1–IN7 input pulldown resistance | 210 | 300 | 390 | kΩ | |
| ζ | IN1–IN7 input filter time constant | 9 | ns | |||
| COUT | OUT1–OUT7 output capacitance | VINX = 3.3 V, VOUTX = 0.4 V | 15 | pF | ||
| FREE-WHEELING DIODE PARAMETERS(5)(4) | ||||||
| VF | Forward voltage drop | IF-peak = 140 mA, VF = VOUTx – VCOM | 1.2 | V | ||
| IF-peak | Diode peak forward current | 140 | mA | |||
(1) The typical continuous current rating is limited by VOL= 0.6 V. Whereas, absolute maximum operating continuous current may be limited by the Thermal performance parameters listed in the Thermal Information and other reliability parameters listed in Recommended Operating Conditions.
(2) See Absolute Maximum Ratings for TJ dependent absolute maximum GND-pin current.
(3) Rise and fall propagation delays, tPHL and tPLH, are measured between 50% values of the input and the corresponding output signal amplitude transition.
(4) Not rated for continuous current operation. For higher reliability, use an external freewheeling diode for inductive loads resulting in more than specified maximum free-wheeling. Diode peak current across various temperature conditions.
(5) Specified by design only. Validated during qualification. Not measured in production testing.
6.6 Typical Characteristics
TA = 25ºC
Figure 1. Load Current, 1-Channel at VOL = 0.6 V
Figure 2. Load Current, 7-Channels in Parallel at VOL = 0.6 V
