SBOS407 Data sheet

SBOS407D December 2007 – May 2016 VCA821

PRODUCTION DATA.

Package Options

Mechanical Data (Package|Pins)

DGS|10
- MPDS035C
D|14
- MPDS177H

Thermal pad, mechanical data (Package|Pins)

Orderable Information

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

	MIN	MAX	UNIT
Power Supply		±6.5	V
Internal Power Dissipation	See Thermal Information
Input Voltage		±V_S	V
Lead Temperature (soldering, 10 s)		260	°C
Junction Temperature (T_J)		150	°C
Junction Temperature (T_J) Maximum Continuous Operation		140	°C
Storage Temperature (T_stg)	–65	125	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2000	V
		Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±1000
		Machine Model	±200

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	NOM	MAX	UNIT
Operating voltage		7	10	12	V
Operating temperature		–40	25	85	°C

7.4 Thermal Information

THERMAL METRIC⁽¹⁾		VCA821		UNIT
		D [SOIC]	DGS [VSSOP]
		14 PINS	10 PINS
R_θJA	Junction-to-ambient thermal resistance	90.3	173.1	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	49.8	46.6	°C/W
R_θJB	Junction-to-board thermal resistance	44.9	94.3	°C/W
ψ_JT	Junction-to-top characterization parameter	13.8	2.2	°C/W
ψ_JB	Junction-to-board characterization parameter	44.6	92.7	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	n/a	n/a	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics: V_S = ±5 V

At A_VMAX = 20 dB, R_F = 402 Ω, R_G = 80 Ω, R_L = 100 Ω, unless otherwise noted.

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT	TEST LEVEL⁽³⁾
AC PERFORMANCE
Small-signal bandwidth		G = 6dB, V_O = 500mV_PP G = 20dB, V_O = 500mV_PP G = 40dB, V_O = 500mV_PP			710		MHz	C
					420		MHz	C
					170		MHz	C
Large-signal bandwidth		G = 20dB, V_O = 4V_PP			320		MHz	C
Gain control bandwidth		V_O = 200mV_PP	+25° C ⁽¹⁾	240	330		MHz	B
			0° C to 70° C ⁽²⁾	235
			–40° C to +85° C ⁽²⁾	235
Bandwidth for 0.1dB flatness		G = 20dB, V_O = 200mV_PP			135		MHz	C
Slew rate		G = 20dB, V_O = 5V Step	+25° C ⁽¹⁾	1800	2500		V/μs	B
			0° C to 70° C ⁽²⁾	1700
			–40° C to +85° C ⁽²⁾	1700
Rise-and-fall time		G = 20dB, V_O = 5V Step	+25° C ⁽¹⁾		1.5	1.8	ns	B
			0° C to 70° C ⁽²⁾			1.9
			–40° C to +85° C ⁽²⁾			1.9
Settling time to 0.01%		G = 20dB, V_O = 5V Step			11		ns	C
Harmonic distortion, 2nd-harmonic		V_O = 2V_PP, f = 20MHz	+25° C ⁽¹⁾	–64	–66		dBc	B
			0° C to 70° C ⁽²⁾	–64
			–40° C to +85° C ⁽²⁾	–64
Harmonic distortion, 3rd -harmonic		V_O = 2V_PP, f = 20MHz	+25° C ⁽¹⁾	–61	–63		dBc	B
			0° C to 70° C ⁽²⁾	–61
			–40° C to +85° C ⁽²⁾	–61
Input voltage noise		f > 100kHz			6.0		nV/√Hz	C
Input current noise		f > 100kHz			2.6		pA/√Hz	C
GAIN CONTROL
Absolute gain error		G_MAX = 20dB, V_G = 2V	+25° C ⁽¹⁾		±0.1	±0.4	dB	A
			0° C to 70° C ⁽²⁾			±0.5
			–40° C to +85° C ⁽²⁾			±0.6
V_ctrl0					0.85		V	C
V_Slope					0.09		V	C
Absolute gain error		G_MAX = 20dB, V_G = 1V, (G = 18.06 dB)	+25° C ⁽¹⁾		±0.3	±0.4	dB	A
			0° C to 70° C ⁽²⁾			±0.5
			–40° C to +85° C ⁽²⁾			±0.6
Gain at V_G = 0.2V		Relative to max gain	+25° C ⁽¹⁾		–26	–24	dB	A
			0° C to 70° C ⁽²⁾			–24
			–40° C to +85° C ⁽²⁾			–23
Gain control bias current		+25° C ⁽¹⁾			10	16	μA	A
		0° C to 70° C ⁽²⁾				16.6
		–40° C to +85° C ⁽²⁾				16.7
Average gain control bias current drift		0° C to 70° C ⁽²⁾				±12	nA/°C	B
Average gain control bias current drift		–40° C to +85° C ⁽²⁾				±12	nA/°C	B
Gain control input impedance					1.5 \|\| 0.6		MΩ \|\| pF	C
DC PERFORMANCE
Input offset voltage		G = 20dB, V_CM = 0V, V_G = 1V	+25° C ⁽¹⁾		±4	±17	mV	A
			0° C to 70° C ⁽²⁾			±17.8
			–40° C to +85° C ⁽²⁾			±19
Average input offset voltage drift		G = 20dB, V_CM = 0V, V_G = 1V	0° C to 70° C ⁽²⁾			30	μV/°C	B
Average input offset voltage drift		G = 20dB, V_CM = 0V, V_G = 1V	–40° C to +85° C ⁽²⁾			30	μV/°C	B
Input bias current		G = 20dB, V_CM = 0V, V_G = 1V	+25° C ⁽¹⁾		19	25	μA	A
			0° C to 70° C ⁽²⁾			29
			–40° C to +85° C ⁽²⁾			31
Average input bias current drift		G = 20dB, V_CM = 0V, V_G = 1V	0° C to 70° C ⁽²⁾			90	nA/°C	B
Average input bias current drift		G = 20dB, V_CM = 0V, V_G = 1V	–40° C to +85° C ⁽²⁾			90	nA/°C	B
Input offset current		G = 20dB, V_CM = 0V, V_G = 1V	+25° C ⁽¹⁾		±0.5	±2.5	μA	A
			0° C to 70° C ⁽²⁾			±3.2
			–40° C to +85° C ⁽²⁾			±3.5
Average input offset current drift		G = 20dB, V_CM = 0V, V_G = 1V	0° C to 70° C ⁽²⁾			±16	nA/°C	B
Average input offset current drift		G = 20dB, V_CM = 0V, V_G = 1V	–40° C to +85° C ⁽²⁾			±16	nA/°C	B
l_{RG MAX}	Max current through gain resistance	+25° C ⁽¹⁾			±2.6	±2.55	mA	B
		0° C to 70° C ⁽²⁾				±2.55
		–40° C to +85° C ⁽²⁾				±2.5
INPUT
Most positive common mode input voltage		R_L = 100Ω	+25° C ⁽¹⁾	+1.6	+1.6		V	A
			0° C to 70° C ⁽²⁾	+1.6
			–40° C to +85° C ⁽²⁾	+1.6
Most negative common mode input voltage		R_L = 100Ω	+25° C ⁽¹⁾		–2.1	-2.1	V	A
			0° C to 70° C ⁽²⁾			–2.1
			–40° C to +85° C ⁽²⁾			–2.1
Common-mode rejection ratio		V_CM = ±0.5V	+25° C ⁽¹⁾	65	80		dB	A
			0° C to 70° C ⁽²⁾	60
			–40° C to +85° C ⁽²⁾	60
Input impedance, differential					0.9 \|\| 0.6		MΩ \|\| pF	C
Input impedance, common-mode					1 \|\| 2		MΩ \|\| pF	C
OUTPUT
Output voltage swing		R_L = 1kΩ	+25° C ⁽¹⁾	±3.6	±3.9		V	A
			0° C to 70° C ⁽²⁾	±3.4
			–40° C to +85° C ⁽²⁾	±3.3
		R_L = 100Ω	+25° C ⁽¹⁾	±3.5	–3.3/+3.6	–3.2	V	A
			0° C to 70° C ⁽²⁾	+3.3		–3.0
			–40° C to +85° C ⁽²⁾	+3.2		–2.9
Output current		V_O = 0V, R_L = 10Ω	+25° C ⁽¹⁾	+60	–55/+90	–50	mA	A
			0° C to 70° C ⁽²⁾	+50		–42
			–40° C to +85° C ⁽²⁾	+45		–38
Output impedance		G = +10V/V, f > 100kHz			0.01		Ω	C
POWER SUPPLY
Specified operating voltage					±5		V	C
Minimum operating voltage					±3.5		V	C
Maximum operating voltage		+25° C ⁽¹⁾				±6	V	A
		0° C to 70° C ⁽²⁾				±6
		–40° C to +85° C ⁽²⁾				±6
Maximum quiescent current		V_G = 1V	+25° C ⁽¹⁾		34	35	mA	A
			0° C to 70° C ⁽²⁾			35.5
			–40° C to +85° C ⁽²⁾			36
Minimum quiescent current		V_G = 1V	+25° C ⁽¹⁾		34	32.5	mA	A
			0° C to 70° C ⁽²⁾			32
			–40° C to +85° C ⁽²⁾			31.5
–PSRR	Power-supply rejection ratio	+25° C ⁽¹⁾		–61	–68		dB	A
		0° C to 70° C ⁽²⁾		–59
		–40° C to +85° C ⁽²⁾		–58
THERMAL CHARACTERISTICS
Specified operating range, D package					–40 to +85		°C	C
θ _JA	Junction-to-ambient thermal resistance	VSSOP-10 (DGS)			130		°C/W	C
θ _JA	Junction-to-ambient thermal resistance	SOIC-14 (D)			80		°C/W	C

(1) Junction temperature = ambient for +25°C tested specifications.

(2) Junction temperature = ambient at low temperature limit; junction temperature = ambient +23°C at high temperature limit for over temperature specifications.

(3) Test levels: (A) 100% tested at +25°C. Over temperature limits set by characterization and simulation. (B) Limits set by characterization and simulation. (C) Typical value only for information.

7.6 Typical Characteristics: V_S = ±5 V, DC Parameters

At T_A = +25°C, R_L = 100 Ω, V_G = +2 V, and V_IN = single-ended input on +V_IN with –V_IN at ground, unless otherwise noted.

Figure 1. Maximum Differential Input Voltage
vs R_G

Figure 3. Maximum Gain Adjust Range
vs Peak-to-Peak Output Voltage

Figure 5. Gain Error Band
vs Gain Control Voltage

Figure 2. Maximum Gain Adjust Range vs R_F

Figure 4. Gain Error Band
vs Gain Control Voltage

Figure 6. Recommended R_F vs A_VMAX

7.7 Typical Characteristics: V_S = ±5 V, DC and Power-Supply Parameters

At T_A = +25°C, R_L = 100 Ω, V_G = +2 V, and V_IN = single-ended input on +V_IN with –V_IN at ground, unless otherwise noted.

Figure 7. Supply Current vs Control Voltage
(A_VMAX = 6 dB)

Figure 9. Supply Current vs Control Voltage
(A_VMAX = 32 dB)

Figure 8. Supply Current vs Control voltage
(A_VMAX = 20 dB)

Figure 10. Typical DC Drift vs Temperature

7.8 Typical Characteristics: V_S = ±5 V, A_VMAX = 6 dB

At T_A = 25°C, R_L = 100 Ω, R_F = 453 Ω, R_G = 453 Ω, V_G = 2 V, V_IN = single-ended input on +V_IN with –V_IN at ground, and SOIC package, unless otherwise noted.

Figure 11. Small-Signal Frequency Response

Figure 13. Large-Signal Pulse Response

Figure 15. Gain Flatness, Deviation From Linear Phase

Figure 17. Harmonic Distortion vs Load Resistance

Figure 19. Harmonic Distortion vs Gain Control Voltage

Figure 21. Two-Tone, Third-Order Intermodulation Intercept vs Gain Control Voltage

Figure 23. Gain Control Frequency Response

Figure 25. Fully-Attenuated Response

Figure 27. Group Delay vs Frequency

Figure 29. Frequency Response vs Capacitive Load

Figure 31. Input Current Noise Density

Figure 12. Small-Signal Pulse Response

Figure 14. Composite Video dG/dP

Figure 16. Harmonic Distortion vs Frequency

Figure 18. Harmonic Distortion vs Output Voltage

Figure 20. Two-Tone, Third-Order
Intermodulation Intercept

Figure 22. Gain vs Gain Control Voltage

Figure 24. Gain Control Pulse Response

Figure 26. Group Delay vs Gain Control Voltage

Figure 28. Recommended R_S vs Capacitive Load

Figure 30. Output Voltage Noise Density

7.9 Typical Characteristics: V_S = ±5 V, A_VMAX = 20 dB

At T_A = +25°C, R_L = 100 Ω, R_F = 402 Ω, R_G = 80 Ω, V_G = +2 V, and V_IN = single-ended input on +V_IN with –V_IN at ground, unless otherwise noted.

Figure 32. Small-Signal Frequency Response

Figure 34. Small-Signal Pulse Response

Figure 36. Gain Flatness, Deviation From Linear Phase

Figure 38. Harmonic Distortion vs Frequency

Figure 40. Harmonic Distortion vs Output Voltage

Figure 42. Two-Tone, Third-Order
Intermodulation Intercept

Figure 44. Gain vs Gain Control Voltage

Figure 46. Gain Control Pulse Response

Figure 48. Fully-Attenuated Response

Figure 50. Output Limited Overdrive Recovery

Figure 52. Group Delay vs Frequency

Figure 33. Large-Signal Frequency Response

Figure 35. Large-Signal Pulse Response

Figure 37. Output Voltage Noise Density

Figure 39. Harmonic Distortion vs Load Resistance

Figure 41. Harmonic Distortion vs Gain Control Voltage

Figure 43. Two-Tone, Third-Order Intermodulation Intercept
vs Gain Control Voltage

Figure 45. Gain Control Frequency Response

Figure 47. Output Voltage and Current Limitations

Figure 49. I_RG Limited Overdrive Recovery

Figure 51. Group Delay vs Gain Control Voltage

7.10 Typical Characteristics: V_S = ±5 V, A_VMAX = 32 dB

At T_A = +25°C, R_L = 100 Ω, R_F = 402 Ω, R_G = 18 Ω, V_G = +2 V, V_IN = single-ended input on +V_IN with –V_IN at ground, and SOIC package, unless otherwise noted.