SBOS061D February   1997  – December 2025 XTR105

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 Recommended Operating Conditions
    3. 5.3 Thermal Information
    4. 5.4 Electrical Characteristics
    5. 5.5 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Linearization
        1. 6.3.1.1 High-Resistance RTDs
      2. 6.3.2 Voltage Regulator
      3. 6.3.3 Open-Circuit Protection
      4. 6.3.4 Reverse-Voltage Protection
      5. 6.3.5 Surge Protection
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 External Transistor
      2. 7.1.2 Loop Power Supply
      3. 7.1.3 2-Wire and 3-Wire RTD Connections
      4. 7.1.4 Radio Frequency Interference
      5. 7.1.5 Error Analysis
    2. 7.2 Typical Applications
    3. 7.3 Layout
      1. 7.3.1 Layout Guidelines
  9. 8 Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Device Support
        1. 8.1.1.1 Device Nomenclature
      2. 8.1.2 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • D|14
  • N|14
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.4 Electrical Characteristics

at TA = +25°C, V+ = 24V, TIP29C external transistor, and all chip site origin (CSO), (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNITS
OUTPUT
Output current equation VIN in volts, RG in ohms IO = VIN × (40 / RG) + 4mA
Output current, specified range 4 20 mA
Overscale limit 24 27 30 mA
Underscale limit IREG = 0V 1.8 2.2 2.6 mA
ZERO OUTPUT (1) VIN = 0V, RG = ∞ 4 mA
Initial error XTR105P, XTR105U ±5 ±25 μA
XTR105PA, XTR105UA ±5 ±50
vs temperature TA = –40°C to +85°C XTR105P, XTR105U ±0.07 ±0.5 μA/°C
XTR105PA, XTR105UA ±0.07 ±0.9
vs supply voltage, V+ V+ = 7.5V to 36V 0.04 0.2 μA/V
vs common-mode voltage VCM = 1.25V to 3.5V(2) 0.02 μA/V
vs VREG output current 0.3 μA/mA
Noise, 0.1Hz to 10Hz 0.03 μAPP
SPAN
Span equation (transconductance) S = 40/RG A/V
Initial error(3) Full-scale (VIN) = 50mV XTR105P, XTR105U ±0.05 ±0.2 %
XTR105PA, XTR105UA ±0.05 ±0.4
vs temperature(3) TA = –40°C to +85°C ±3 ±25 ppm/°C
Nonlinearity, ideal input(4) Full-scale (VIN) = 50mV 0.003 0.01 %
INPUT(5)
Offset voltage VCM = 2V CSO: SHE XTR105P, XTR105U ±50 ±100 μV
XTR105PA, XTR105UA ±50 ±250
CSO: TID ±7
vs temperature TA = –40°C to +85°C CSO: SHE XTR105P, XTR105U ±0.4 ±1.5 μV/°C
XTR105PA, XTR105UA ±0.4 ±3
CSO: TID ±0.1
vs supply voltage, V+ V+ = 7.5V to 36V ±0.3 ±3 μV/V
vs common-mode voltage, RTI (CMRR) VCM = 1.25V to 3.5V(2) XTR105P, XTR105U ±10 ±50 μV/V
XTR105PA, XTR105UA ±10 ±100
Common-mode input range(2) 1.25 3.5 V
Input bias current CSO: SHE XTR105P, XTR105U 5 25 nA
XTR105PA, XTR105UA 5 50
CSO: TID 0.9 8
vs temperature TA = –40°C to +85°C CSO:SHE 20 pA/°C
CSO: TID 1
Input offset current XTR105P, XTR105U ±0.2 ±3 nA
XTR105PA, XTR105UA ±0.2 ±10
vs temperature TA = –40°C to +85°C CSO: SHE 5 pA/°C
CSO: TID ±1
Impedance, differential 0.1 || 1 GΩ || pF
Common-mode 5 || 10 GΩ || pF
Noise f = 0.1Hz to 10Hz 0.6 μAPP
CURRENT SOURCES (6)
Current 800 μA
Accuracy XTR105P, XTR105U ±0.05 ±0.2 %
XTR105PA, XTR105UA ±0.05 ±0.4
vs temperature TA = –40°C to +85°C XTR105P, XTR105U ±15 ±35 ppm/°C
XTR105PA, XTR105UA ±15 ±75
vs power supply, V+ V+ = 7.5V to 36V CSO: SHE ±10 ±25 ppm/V
CSO: TID ±2 ±15
Matching XTR105P, XTR105U ±0.02 ±0.1 %
XTR105PA, XTR105UA ±0.02 ±0.2
vs temperature TA = –40°C to +85°C XTR105P, XTR105U ±3 ±15 ppm/°C
XTR105PA, XTR105UA ±3 ±30
vs power supply, V+ V+ = 7.5V to 36V 1 10 ppm/V
Compliance voltage Positive (V+) − 3 (V+) − 2.5 V
Negative(2) 0 −0.2
Output impedance 150 MΩ
Noise f = 0.1Hz to 10Hz 0.003 μAPP
VREG(2) 5.1 V
Accuracy ±0.02 ±0.1 V
vs temperature TA = –40°C to +85°C ±0.5 mV/°C
vs supply voltage, V+ 1 mV/V
Output current ±1 mA
Output impedance 75 Ω
LINEARIZATION
RLIN (internal) 1 kΩ
Accuracy XTR105P, XTR105U ±0.2 ±0.5 %
XTR105PA, XTR105UA ±0.2 ±1
vs temperature TA = –40°C to +85°C ±25 ±100 ppm/°C
(1) Describes accuracy of the 4mA low-scale offset current. Does not include input amplifier effects. Can be trimmed to zero.
(2) Voltage measured with respect to IRET pin.
(3) Does not include initial error or TCR of gain-setting resistor, RG.
(4) Increasing the full-scale input range improves nonlinearity.
(5) Does not include zero output initial error.
(6) Current source output voltage VO = 2V, with respect to IRET pin.