SBOS124B january   2000  – june 2023 XTR115 , XTR116

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 Recommended Operating Conditions
    3. 6.3 Thermal Information
    4. 6.4 Electrical Characteristics
    5. 6.5 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Reverse-Voltage Protection
      2. 7.3.2 Overvoltage Surge Protection
  9. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 External Transistor
      2. 8.1.2 Minimum Scale Current
      3. 8.1.3 Offsetting the Input
      4. 8.1.4 Maximum Output Current
      5. 8.1.5 Radio Frequency Interference
      6. 8.1.6 Circuit Stability
  10. 9 Device and Documentation Support
    1. 9.1 Device Support
    2. 9.2 Documentation Support
      1. 9.2.1 Related Documentation
    3. 9.3 Receiving Notification of Documentation Updates
    4. 9.4 Support Resources
    5. 9.5 Trademarks
    6. 9.6 Electrostatic Discharge Caution
    7. 9.7 Glossary
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.4 Electrical Characteristics

at TA = 25°C, V+ = 24 V, RIN = 20 kΩ, and TIP29C external transistor (unless otherwise noted)
PARAMETER TEST CONDITIONS XTR115U, XTR116U XTR115UA, XTR116UA UNIT
MIN TYP MAX MIN TYP MAX
OUTPUT
IO Output current equation IO = IIN × 100 IO = IIN × 100
Output current, linear range 0.25 25 0.25 25 mA
ILIM Overscale limit 32 32 mA
IMIN Underscale limit IREG = 0, IREF = 0 0.2 0.25 0.2 0.25 mA
SPAN
S Span (current gain) 100 100 A/A
Error(1) IOUT = 250 mA to 25 mA ±0.05 ±0.2 ±0.05 ±0.4 %
vs Temperature TA = –40°C to +85°C ±3 ±20 ±3 ±20 ppm/°C
Nonlinearity IIN = 250 mA to 25 mA ±0.003 ±0.01 ±0.003 ±0.02 %
INPUT
VOS Offset voltage (op amp) IIN = 40 mA ±100 ±250 ±100 ±500 µV
vs Temperature TA = –40°C to +85°C ±0.7 ±3 ±0.7 ±6 µV/°C
vs Supply voltage, V+ V+ = 7.5 V to 36 V ±0.1 ±2 ±0.1 ±2 µV/V
IB Bias current –35 –35 nA
vs Temperature 300 300 pA/°C
en Noise: 0.1 Hz to 10 Hz 0.6 0.6 µVp-p
DYNAMIC RESPONSE
Small signal bandwidth CLOOP = 0, RL = 0 380 380 kHz
Slew rate 3.2 3.2 mA/µs
VREF(2)
XTR115 2.5 2.5 V
XTR116 4.096 4.096 V
Voltage accuracy IREF = 0 ±0.05 ±0.25 ±0.05 ±0.5 %
vs Temperature TA = –40°C to +85°C ±20 ±35 ±20 ±75 ppm/°C
vs Supply voltage, V+ V+ = 7.5 V to 36 V ±1 ±10 ±1 ±10 ppm/V
vs Load IREF = 0 mA to 2.5 mA ±200 ±200 ppm/mA
Noise 0.1 Hz to 10 Hz 10 10 µVp-p
Short-circuit current 16 16 mA
VREG(2)
Voltage 5 5 V
Voltage accuracy IREG = 0 ±0.05 ±0.1 ±0.05 ±0.1 V
vs Temperature TA = –40°C to +85°C ±0.1 ±0.1 mV/°C
vs Supply voltage, V+ V+ = 7.5 V to 36 V 1 1 mV/V
vs Output current See Typical Characteristics See Typical Characteristics
Short-circuit current 12 12 mA
POWER SUPPLY, V+
Quiescent current 200 250 200 250 µA
TA = –40°C to +85°C 240 300 240 300 µA
(1) Does not include initial error or TCR of RIN.
(2) Voltage measured with respect to IRET pin.