SNAS825A December   2021  – April 2022 ADC128S102-SEP

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Switching Characteristics
    8. 6.8 Timing Diagrams
    9. 6.9 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 ADC128S102-SEP Transfer Function
      2. 7.3.2 Analog Inputs
      3. 7.3.3 Digital Inputs and Outputs
      4. 7.3.4 Radiation Environments
        1. 7.3.4.1 Total Ionizing Dose
        2. 7.3.4.2 Single Event Latch-Up
    4. 7.4 Device Functional Modes
      1. 7.4.1 ADC128S102-SEP Operation
    5. 7.5 Programming
      1. 7.5.1 Serial Interface
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
  9. 9 Power Supply Recommendations
    1. 9.1 Power-Supply Sequence
    2. 9.2 Power Management
    3. 9.3 Power-Supply Noise Considerations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Receiving Notification of Documentation Updates
    2. 11.2 Support Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information
    1. 12.1 Engineering Samples

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Radiation tolerant:
    • Single-event latch-up (SEL) immune up to
      LET = 43 MeV-cm2/mg at 125°C
    • Single-event functional interrupt (SEFI) characterized up to LET = 43 MeV-cm2/mg
    • Total ionizing dose (TID) RLAT/RHA characterized up to 30 krad(Si)
  • Space-enhanced plastic (space EP):
    • Meets ASTM E595 outgassing specification
    • Vendor item drawing (VID) V62/22608
    • Military temperature range: –55°C to 125°C
    • One fabrication, assembly, and test site
    • Gold bond wire, NiPdAu lead finish
    • Wafer lot traceability
    • Extended product life cycle
    • Extended product change notification
  • Wide supply range:
    • VA: 2.7 V to 5.25 V
    • VD: 2.7 V to VA
  • SPI™-, QSPI™-, MICROWIRE®-, DSP-compatible
  • Conversion rate: 50 kSPS to 1 MSPS
  • DNL: +1.8 LSB to −0.99 LSB (maximum)
  • INL: +1.6 to −1.6 LSB (maximum)
  • Power consumption:
    • 3-V supply: 2.7 mW (typical)
    • 5-V supply: 11 mW (typical)