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  • INA114 精密仪表放大器

    • ZHCSTC7A September   2000  – January 2024 INA114

      PRODUCTION DATA  

  • CONTENTS
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  • INA114 精密仪表放大器
  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6 Application and Implementation
    1. 6.1 Application Information
      1. 6.1.1 Setting the Gain
      2. 6.1.2 Noise Performance
      3. 6.1.3 Offset Trimming
      4. 6.1.4 Input Bias Current Return Path
      5. 6.1.5 Input Common-Mode Range
      6. 6.1.6 Input Protection
      7. 6.1.7 Output Voltage Sense (SOIC-16 Package Only)
  8. 7 Typical Applications
  9. 8 Device and Documentation Support
    1. 8.1 接收文档更新通知
    2. 8.2 支持资源
    3. 8.3 Trademarks
    4. 8.4 静电放电警告
    5. 8.5 术语表
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information
  12. 重要声明

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • P|8
  • DW|16
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Data Sheet

INA114 精密仪表放大器

本资源的原文使用英文撰写。 为方便起见，TI 提供了译文；由于翻译过程中可能使用了自动化工具，TI 不保证译文的准确性。 为确认准确性，请务必访问 ti.com 参考最新的英文版本（控制文档）。

1 特性

  • 低失调电压：最大值为 50µV（对于高增益）
  • 低温漂：最大值为 0.3µV/°C（对于高增益）
  • 低输入偏置电流：2nA（最大值）
  • 高共模抑制：115dB（最小值）
  • 输入过压保护：±40V
  • 宽电源电压范围：±2.25V 至 ±18V
  • 封装：PDIP-8 和 SOIC-16

2 应用

  • 外科手术设备
  • 传动器
  • 多功能继电器
  • 火车控制和管理
  • 轨道旁信令和控制

3 说明

INA114 是一款低成本通用仪表放大器，可提供出色的精度。此器件采用多功能三级运算放大器设计，尺寸小巧，适用于多种应用。

可通过单个外部电阻器在 1 到 10,000 范围内设置任意增益。内部输入保护可耐受高达 ±40V 的电压且不会造成损坏。

INA114 经过激光修整，具有极低失调电压 (50µV)、低温漂 (0.3µV/°C) 和高共模抑制（G = 1000 时为 115dB）。该器件可由低至 ±2.25V 的电源供电，适用于电池供电型和 5V 单电源系统。

INA114 采用 8 引脚 PDIP 和 16 引脚 SOIC 表面贴装封装。采用两种封装时，额定工作温度范围均为 −40°C 至 +85°C。

封装信息
器件型号 封装(1) 封装尺寸(2)
INA114 P（PDIP，8） 9.81mm × 9.43mm
DW（SOIC，16） 10.3mm × 10.3mm
(1) 有关更多信息，请参阅 节 10。
(2) 封装尺寸（长 × 宽）为标称值，并包括引脚（如适用）。
GUID-5DE26D4C-F738-426B-AD44-E639B87A66B7-low.png原理图

4 Pin Configuration and Functions

GUID-20240119-SS0I-WZHT-WSXD-XCFNGQWQCQ2W-low.png Figure 4-1 DW Package, 16-Pin SOIC (Top View)
GUID-20240119-SS0I-4H72-D2N1-JD2B66JCGWH3-low.png Figure 4-2 P Package, 8-Pin PDIP (Top View)

5 Specifications

5.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VS Supply voltage Single supply, VS = (+VS)  36 V
Dual supply, VS = (+VS) – (–VS) –18 18 V
Signal input pins –40 40 V
VO Signal output voltage (–VS) – 0.5 (+VS) + 0.5 V
IS Output short-circuit (to VS/2) Continuous
TA Operating temperature –40 125 °C
TJ Junction temperature 150 °C
Tstg Storage temperature –40 125 °C
(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.

5.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±1500 V
Charged-device model (CDM), per ANSI/ESDA/JEDEC JS-002(2) ±1500
(1) JEDEC document JEP155 states that 500V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250V CDM allows safe manufacturing with a standard ESD control process.

5.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VS Supply voltage Single supply, VS = (+VS) 4.5 36 V
Dual supply, VS = (+VS) – (–VS) ±2.25 ±18
TA Specified temperature –40 85 °C

5.4 Thermal Information

THERMAL METRIC(1) INA114 UNIT
DW (SOIC) P (PDIP)
16 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance 74.2 110.2 ℃/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

5.5 Electrical Characteristics

at TA = 25°C, VS = ±15V, RL = 2kΩ, VREF = 0V, and G = 1 (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT
VOS Offset voltage RTI INA114BP, BU ±10 + 20/G ±50 + 150/G µV
INA114AP, AU ±25 + 30/G ±125 + 500/G
Offset voltage drift TA = –40°C to +85°C, RTI INA114BP, BU ±0.1 + 0.5/G ±0.3 + 5/G µV/℃
INA114AP, AU ±0.25 + 5/G ±1 + 10/G
Long-term stability  ±0.2 + 0.5/G µV/mo
Differential impedance 100 || 6 GΩ || pF
Common-mode impedance 100 || 6 GΩ || pF
Operating input voltage (V–) + 4 (V+) – 4 V
PSRR Power-supply rejection ratio RTI, ±2.25V to ±18V 0.5 + 2/G 3 + 10/G µV/V
CMRR Common-mode rejection ratio At dc to 60Hz, RTI,
VCM = ±10V, 
ΔRS = 1kΩ		 G = 1 INA114BP, BU 80 96 dB
INA114AP, AU 75 90 dB
G = 10 INA114BP, BU 96 115
INA114AP, AU 90 106
G = 100 INA114BP, BU 110 120
INA114AP, AU 106 110
G = 1000 INA114BP, BU 115 120
INA114AP, AU 106 110
BIAS CURRENT
IB Input bias current VCM = VS / 2 INA114BP, BU ±0.5 ±2 nA
INA114AP, AU ±0.5 ±5
Input bias current drift TA = –40°C to +85°C INA114BP, BU ±8 pA/℃
INA114AP, AU ±8
IOS Input offset current VCM = VS / 2 INA114BP, BU ±0.5 ±2 nA
INA114AP, AU ±0.5 ±5
Input offset current drift TA = –40°C to +85°C INA114BP, BU ±8 pA/℃
INA114AP, AU ±8
NOISE VOLTAGE
Voltage noise G = 1000, RS = 0Ω f = 10Hz 15 nV/√Hz
f = 100Hz 11
f = 1kHz 11
fB = 0.1Hz to 10Hz 0.4 µVPP
Noise current f = 10Hz 0.4 pA/√Hz
f = 1kHz 0.2 pA/√Hz
fB = 0.1Hz to 10Hz 18 pAPP
GAIN
G Gain equation 1 + (50kΩ / RG) V/V
Range of gain 1 10000 V/V
GE Gain error VO = ±10V, G = 1 ±0.01 ±0.05 %
VO = ±10V G = 10 INA114BP, BU ±0.02 ±0.4
INA114AP, AU ±0.02 ±0.5
G = 100 INA114BP, BU ±0.05 ±0.5
INA114AP, AU ±0.05 ±0.7
G = 1000 INA114BP, BU ±0.5 ±1
INA114AP, AU ±0.5 ±2
Gain drift ±2 ±10 ppm/°C
RS = 50kΩ(1) ±25 ±100
Gain nonlinearity VO = –10V to +10V G = 1 INA114BP, BU ±0.0001 ±0.001 % of FSR
INA114AP, AU ±0.0001 ±0.002
G = 10, 100 INA114BP, BU ±0.0005 ±0.002
INA114AP, AU ±0.0005 ±0.004
G = 1000 INA114BP, BU ±0.002 ±0.01
INA114AP, AU ±0.002 ±0.02
OUTPUT
Output voltage IO = 5mA, TA = –40°C to 85°C (V–) +1.5 (V+) –1.5 V
VS = ±11.4V (V–) + 1.4 (V+) – 1.4
VS = ±2.25V (V–) +1 (V+) – 1
Load capacitance stability 1000 pF
ISC Short-circuit current Continuous to VS / 2 +20 / –15 mA
FREQUENCY RESPONSE
BW Bandwidth, –3dB G = 1 1 MHz
G = 10 100 kHz
G = 100 10
G = 1000 1
SR Slew rate G = 10, VO = ±10V 0.3 0.6 V/µs
tS Settling time 0.01%, VSTEP = 10V G = 1 18 µs
G = 10 20
G = 100 120
G = 1000 1100
Overload recovery 50% overdrive 20 µs
POWER SUPPLY
IQ Quiescent current VS = ±2.25V to ±18V, VIN = 0V ±2.2 ±3 mA
(1) Temperature coefficient of the "50kΩ" term in the gain equation.

 
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