ZHCSR06H March 1984 – December 2022 SN54HCT245 , SN74HCT245
PRODUCTION DATA
请参考 PDF 数据表获取器件具体的封装图。
SNx4HCT245 八路总线收发器专为数据总线之间的异步双向通信而设计。控制功能实现可更大限度地减少外部时序要求。
根据方向控制 (DIR) 输入上的逻辑电平,SNx4HCT245 器件将数据从 A 总线发送至 B 总线,或者将数据从 B 总线发送至 A 总线。输出使能 (OE) 输入可用于禁用器件,这样可有效隔离总线。
器件型号 | 封装(1) | 封装尺寸(标称值) |
---|---|---|
SN54HCT245 | J(CDIP,20) | 24.20mm × 6.92mm |
FK(LCCC,20) | 8.89mm × 8.89mm | |
W(CFP,20) | 13.09mm × 6.92mm | |
SN74HCT245 | DW(SOIC,20) | 12.80mm × 7.50mm |
N(PDIP,20) | 24.33mm × 6.35mm | |
NS(SO,20) | 12.60mm × 5.30mm | |
PW(TSSOP,20) | 6.50mm × 4.40mm | |
DB(SSOP,20) | 7.80mm × 7.20mm | |
DGS(VSSOP,20) | 5.10mm × 3.00mm |
Changes from Revision G (September 2022) to Revision H (December 2022)
PIN | TYPE(1) | DESCRIPTION | |
---|---|---|---|
NO. | NAME | ||
1 | DIR | I | Direction select. High = A to B, Low = B to A |
2 | A1 | I/O | Channel 1 port A |
3 | A2 | I/O | Channel 2 port A |
4 | A3 | I/O | Channel 3 port A |
5 | A4 | I/O | Channel 4 port A |
6 | A5 | I/O | Channel 5 port A |
7 | A6 | I/O | Channel 6 port A |
8 | A7 | I/O | Channel 7 port A |
9 | A8 | I/O | Channel 8 port A |
10 | GND | — | Ground |
11 | B8 | O/I | Channel 8 port B |
12 | B7 | O/I | Channel 7 port B |
13 | B6 | O/I | Channel 6 port B |
14 | B5 | O/I | Channel 5 port B |
15 | B4 | O/I | Channel 4 port B |
16 | B3 | O/I | Channel 3 port B |
17 | B2 | O/I | Channel 2 port B |
18 | B1 | O/I | Channel 1 port B |
19 | OE | I | Output enable, active low. High = all ports in high impedance mode, Low = all ports active |
20 | VCC | — | Power supply |
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
VCC | Supply voltage | –0.5 | 7 | V | |
IIK | Input clamp current(2) | VI < 0 or VI > VCC | ±20 | mA | |
IOK | Output clamp current(2) | VO < 0 or VO > VCC | ±20 | mA | |
IO | Continuous output current | VO = 0 to VCC | ±35 | mA | |
Continuous current through VCC or GND | ±70 | mA | |||
TJ | Operating virtual junction temperature | 150 | °C | ||
Tstg | Storage temperature | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±1500 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±2000 |
MIN | NOM | MAX | UNIT | ||||
---|---|---|---|---|---|---|---|
VCC | Supply voltage | 4.5 | 5 | 5.5 | V | ||
VIH | High-level input voltage | VCC = 4.5 V to 5.5 V | 2 | V | |||
VIL | Low-level input voltage | VCC = 4.5 V to 5.5 V | 0.8 | V | |||
VI | Input voltage | 0 | VCC | V | |||
VO | Output voltage | 0 | VCC | V | |||
Δt/Δv | Input transition rise and fall time | 500 | ns | ||||
TA | Operating free-air temperature | SN54HCT245 | –55 | 125 | °C | ||
SN74HCT245 | –40 | 85 |
THERMAL METRIC(1) | SNx4HCT245 | UNIT | |||||||||
---|---|---|---|---|---|---|---|---|---|---|---|
J (CDIP) |
W (CFP) |
FK (LCCC) |
DB (SSOP) |
DW (SOIC) |
N (PDIP) |
NS (SO) |
PW (TSSOP) |
DGS (VSSOP) |
|||
20 PINS | 20 PINS | 20 PINS | 20 PINS | 20 PINS | 20 PINS | 20 PINS | 20 PINS | 20 PINS | |||
RθJA | Junction-to-ambient thermal resistance | — | — | — | 84.6 | 70.4 | 43.4 | 68.9 | 94.9 | 118.4 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 38.7 | 60.8 | 37.1 | 44.3 | 36.5 | 29.5 | 34.7 | 30.2 | 57.7 | °C/W |
RθJB | Junction-to-board thermal resistance | 49.8 | 100.4 | 36.1 | 40.2 | 38.1 | 24.3 | 36.4 | 45.7 | 73.1 | °C/W |
ψJT | Junction-to-top characterization parameter | — | — | — | 11.1 | 11.3 | 15 | 11.6 | 1.5 | 5.7 | °C/W |
ψJB | Junction-to-board characterization parameter | — | — | — | 39.7 | 37.7 | 24.2 | 36 | 45.1 | 72.7 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 11.5 | 8.5 | 4.3 | — | — | — | — | — | — | °C/W |
PARAMETER | TEST CONDITIONS | VCC | MIN | TYP | MAX | UNIT | ||||
---|---|---|---|---|---|---|---|---|---|---|
VOH | High-Level Output Voltage | VI = VIH or VIL | IOH = –20 µA | TA = 25°C | 4.5 V | 4.4 | 4.499 | V | ||
SN54HCT245 | 4.4 | |||||||||
SN74HCT245 | 4.4 | |||||||||
IOH = –6 mA | TA = 25°C | 3.98 | 4.3 | |||||||
SN54HCT245 | 3.7 | |||||||||
SN74HCT245 | 3.84 | |||||||||
VOL | Low-Level Output Voltage | VI = VIH or VIL | IOL = 20 µA | TA = 25°C | 4.5 V | 0.001 | 0.1 | V | ||
SN54HCT245 | 0.1 | |||||||||
SN74HCT245 | 0.1 | |||||||||
IOL = 6 mA | TA = 25°C | 0.17 | 0.26 | |||||||
SN54HCT245 | 0.4 | |||||||||
SN74HCT245 | 0.33 | |||||||||
II | Input Current | DIR or OE | VI = VCC or 0 | TA = 25°C | 5.5 V | ±0.1 | ±100 | nA | ||
SN54HCT245 | ±1000 | |||||||||
SN74HCT245 | ±1000 | |||||||||
IOZ | Off-State Output Current | A or B | VO = VCC or 0 | TA = 25°C | 5.5 V | ±0.01 | ±0.5 | µA | ||
SN54HCT245 | ±10 | |||||||||
SN74HCT245 | ±5 | |||||||||
ICC | Supply Current | VI = VCC or 0 | IO = 0 | TA = 25°C | 5.5 V | 8 | µA | |||
SN54HCT245 | 160 | |||||||||
SN74HCT245 | 80 | |||||||||
∆ICC(1) | Supply-Current Change | One input at 0.5 V or 2.4 V, Other inputs at 0 or VCC |
TA = 25°C | 5.5 V | 1.4 | 2.4 | mA | |||
SN54HCT245 | 3 | |||||||||
SN74HCT245 | 2.9 | |||||||||
Ci(2) | Input Capacitance | DIR or OE | TA = 25°C | 4.5 V to 5.5 V |
3 | 10 | pF | |||
SN54HCT245 | 10 | |||||||||
SN74HCT245 | 10 |
PARAMETER | FROM (INPUT) | TO (OUTPUT) | VCC | TEST CONDITIONS | MIN | TYP | MAX | UNIT |
---|---|---|---|---|---|---|---|---|
tpd | A or B | B or A | 4.5 V | TA = 25°C | 16 | 22 | ns | |
SN54HCT245 | 33 | |||||||
SN74HCT245 | 28 | |||||||
5.5 V | TA = 25°C | 14 | 20 | |||||
SN54HCT245 | 30 | |||||||
SN74HCT245 | 25 | |||||||
ten | OE | A or B | 4.5 V | TA = 25°C | 25 | 46 | ns | |
SN54HCT245 | 69 | |||||||
SN74HCT245 | 58 | |||||||
5.5 V | TA = 25°C | 22 | 41 | |||||
SN54HCT245 | 62 | |||||||
SN74HCT245 | 52 | |||||||
tdis | OE | A or B | 4.5 V | TA = 25°C | 26 | 40 | ns | |
SN54HCT245 | 60 | |||||||
SN74HCT245 | 50 | |||||||
5.5 V | TA = 25°C | 23 | 36 | |||||
SN54HCT245 | 54 | |||||||
SN74HCT245 | 45 | |||||||
tt | A or B | 4.5 V | TA = 25°C | 9 | 12 | ns | ||
SN54HCT245 | 18 | |||||||
SN74HCT245 | 15 | |||||||
5.5 V | TA = 25°C | 8 | 11 | |||||
SN54HCT245 | 16 | |||||||
SN74HCT245 | 14 |