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  • CSD13201W10 N-Channel NexFET™ Power MOSFET

    • SLPS306A May   2012  – September 2015 CSD13201W10

      PRODUCTION DATA.  

  • CONTENTS
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  • CSD13201W10 N-Channel NexFET™ Power MOSFET
  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Community Resources
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 CSD13201W10 Package Dimensions
    2. 7.2 Land Pattern Recommendation
    3. 7.3 Tape and Reel Information
  8. IMPORTANT NOTICE

Package Options

Mechanical Data (Package|Pins)
  • YZB|4
    • MXBG024C
Thermal pad, mechanical data (Package|Pins)
Orderable Information
  • slps306a_oa
  • slps306a_pm
search No matches found.
  • Full reading width
    • Full reading width
    • Comfortable reading width
    • Expanded reading width
  • Card for each section
  • Card with all content

 

DATA SHEET

CSD13201W10 N-Channel NexFET™ Power MOSFET

1 Features

  • Ultra-Low Qg and Qgd
  • Small Footprint (1 mm × 1 mm)
  • Low Profile 0.62-mm Height
  • Pb-Free
  • RoHS Compliant
  • Halogen-Free
  • Gate-Source Voltage Clamp

2 Applications

  • Battery Management
  • Load Switch
  • Battery Protection

3 Description

This 12-V, 26-mΩ, N-Channel device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile.

Top View

CSD13201W10 IO.png

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 12 V
Qg Gate Charge Total (4.5 V) 2.3 nC
Qgd Gate Charge Gate-to-Drain 0.3 nC
RDS(on) Drain-to-Source On Resistance VGS = 1.8 V 38 mΩ
VGS = 2.5 V 29
VGS = 4.5 V 26 mΩ
VGS(th) Threshold Voltage 0.8 V

Device Information(1)

PART NUMBER PACKAGE MEDIA QTY SHIP
CSD13201W10 1 mm × 1 mm
Wafer Level Package		 7-inch reel 3000 Tape and Reel
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 12 V
VGS Gate-to-Source Voltage ±8 V
ID Continuous Drain Current,
TA = 25°C(1) 		1.6 A
IDM Pulsed Drain Current, TA = 25°C(2) 20.2 A
PD Power Dissipation(1) 1.2 W
TJ,
Tstg		 Operating Junction and
Storage Temperature Range		 –55 to 150 °C
  1. RθJA = 105°C/W on 1in2 Cu (2 oz.) on 0.060" thick FR4 PCB.
  2. Pulse width ≤ 300 μs, duty cycle ≤ 2%

RDS(on) vs VGS

CSD13201W10 graph07_new.png

Gate Charge

CSD13201W10 graph04_new2.png

4 Revision History

Changes from * Revision (May 2012) to A Revision

  • Added part number to title Go
  • Enhanced Description Go
  • Added Device and Documentation Support section. Go

5 Specifications

5.1 Electrical Characteristics

TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-source voltage VGS = 0 V, ID = 250 μA 12 V
IDSS Drain-to-source leakage current VGS = 0 V, VDS = 9.6 V 1 μA
IGSS Gate-to-source leakage current VDS = 0 V, VGS = 8 V 100 nA
VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250 μA 0.65 0.8 1.1 V
RDS(on) Drain-to-source on resistance VGS = 1.8 V, ID = 1 A 38 53 mΩ
VGS = 2.5 V, ID = 1 A 29 39
VGS = 4.5 V, ID = 1 A 26 34
gfs Transconductance VDS = 6 V, ID = 1 A 23 S
DYNAMIC CHARACTERISTICS
CISS Input capacitance VGS = 0 V, VDS = 6 V, ƒ = 1 MHz 385 462 pF
COSS Output capacitance 245 294 pF
CRSS Reverse transfer capacitance 18.1 22.6 pF
Rg Series gate resistance 3 Ω
Qg Gate charge total (4.5 V) VDS = 6 V, ID = 1 A 2.3 2.9 nC
Qgd Gate charge gate-to-drain 0.3 nC
Qgs Gate charge gate-to-source 0.5 nC
Qg(th) Gate charge at Vth 0.3 nC
QOSS Output charge VDS = 6.0 V, VGS = 0 V 1.8 nC
td(on) Turn on delay time VDS = 6 V, VGS = 4.5 V, ID = 1 A
RG = 20 Ω		 3.9 ns
tr Rise time 5.9 ns
td(off) Turn off delay time 14.4 ns
tf Fall time 9.7 ns
DIODE CHARACTERISTICS
VSD Diode forward voltage IS = 1 A, VGS = 0 V 0.7 1 V
Qrr Reverse recovery charge VDS= 6 V, IS = 1 A, di/dt = 100 A/μs 2.4 nC
trr Reverse recovery time 11.5 ns

5.2 Thermal Information

(TA = 25°C unless otherwise stated)
THERMAL METRIC MIN TYP MAX UNIT
RθJA Thermal resistance junction-to-ambient (minimum Cu area) 228.6 °C/W
RθJA Thermal resistance junction-to-ambient (1 in2 Cu area) 131.1 °C/W
CSD13201W10 M0149-01_LPS209.png
Max RθJA = 131.1°C/W when mounted on 1 inch2 of 2 oz. Cu.
CSD13201W10 M0150-01_LPS209.png
Max RθJA = 228.6°C/W when mounted on minimum pad area of 2 oz. Cu.

5.3 Typical MOSFET Characteristics

TA = 25°C (unless otherwise noted)
CSD13201W10 graph01_LPS.png
Figure 1. Transient Thermal Impedance
CSD13201W10 graph02_LPS.png
Figure 2. Saturation Characteristics
CSD13201W10 graph04_new2.png
Figure 4. Gate Charge
CSD13201W10 graph06_LPS.png
Figure 6. Threshold Voltage vs Temperature
CSD13201W10 graph08_LPS.png
Figure 8. On Resistance vs Temperature
CSD13201W10 graph10_LPS.png
Figure 10. Maximum Safe Operating Area
CSD13201W10 graph03_LPS.png
Figure 3. Transfer Characteristics
CSD13201W10 graph05_LPS.png
Figure 5. Capacitance
CSD13201W10 graph07_new.png
Figure 7. On Resistance vs Gate Voltage
CSD13201W10 graph09_LPS.png
Figure 9. Typical Diode Forward Voltage
CSD13201W10 graph12_LPS.png
Figure 11. Maximum Drain Current vs Temperature

 
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