DATA SHEET
CSD13380F3 12-V N-Channel FemtoFET MOSFET
1 Features
- Low on resistance
- Ultra-low Qg and Qgd
- High operating drain current
- Ultra-small footprint
- 0.73 mm × 0.64 mm
- Low profile
- 0.36-mm max height
- Integrated ESD protection diode
- Rated > 3-kV HBM
- Rated > 2-kV CDM
- Lead and halogen free
- RoHS compliant
2 Applications
- Optimized for load switch applications
- Optimized for general purpose switching applications
- Battery applications
- Handheld and mobile applications
3 Description
This 63-mΩ, 12-V N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.
Typical Part Dimensions
Product Summary
| TA = 25°C | TYPICAL VALUE | UNIT | ||
|---|---|---|---|---|
| VDS | Drain-to-Source Voltage | 12 | V | |
| Qg | Gate Charge Total (4.5 V) | 0.91 | nC | |
| Qgd | Gate Charge Gate-to-Drain | 0.15 | nC | |
| RDS(on) | Drain-to-Source On Resistance | VGS = 1.8 V | 96 | mΩ |
| VGS = 2.5 V | 73 | |||
| VGS = 4.5 V | 63 | |||
| VGS(th) | Threshold Voltage | 0.85 | V | |
Device Information(1)
| DEVICE | QTY | MEDIA | PACKAGE | SHIP |
|---|---|---|---|---|
| CSD13380F3 | 3000 | 7-Inch Reel | Femto 0.73 mm × 0.64 mm Land Grid Array (LGA) |
Tape and Reel |
| CSD13380F3T | 250 |
(1) For all available packages, see the orderable addendum at the
end of the data sheet.
Absolute Maximum Ratings
| TA = 25°C (unless otherwise stated) | VALUE | UNIT | |
|---|---|---|---|
| VDS | Drain-to-Source Voltage | 12 | V |
| VGS | Gate-to-Source Voltage | 8 | V |
| ID | Continuous Drain Current(1) | 3.6 | A |
| Continuous Drain Current(2) | 2.1 | ||
| IDM | Pulsed Drain Current(2)(3) | 13.5 | A |
| PD | Power Dissipation(1) | 1.4 | W |
| Power Dissipation(2) | 0.5 | ||
| V(ESD) | Human-Body Model (HBM) | 3 | kV |
| Charged-Device Model (CDM) | 2 | ||
| TJ, Tstg |
Operating Junction, Storage Temperature |
–55 to 150 | °C |
(1) Max Cu, typical RθJA = 90°C/W on 1-in2
(6.45-cm2), 2-oz
(0.071-mm) thick Cu pad on a 0.06-in (1.52-mm) thick FR4 PCB.
(0.071-mm) thick Cu pad on a 0.06-in (1.52-mm) thick FR4 PCB.
(2) Min Cu, typical RθJA = 255°C/W.
(3) Pulse duration ≤ 100 μs, duty cycle ≤ 1%.
Top View4 Revision History
Changes from Revision * (October 2016) to Revision A (February 2022)
