Refer to the PDF data sheet for device specific package drawings
This 25 V, 3.8 mΩ, 3.3 × 3.3 mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion and optimized for 5 V gate drive applications.
Device | Media | Qty | Package | Ship |
---|---|---|---|---|
CSD16340Q3 | 13-Inch Reel | 2500 | SON 3.3 x 3.3 mm Plastic Package | Tape and Reel |
CSD16340Q3T | 7-Inch Reel | 250 |
TA = 25°C | VALUE | UNIT | |
---|---|---|---|
VDS | Drain-to-Source Voltage | 25 | V |
VGS | Gate-to-Source Voltage | +10 / –8 | V |
ID | Continuous Drain Current, TC = 25°C | 60 | A |
Continuous Drain Current(1) | 21 | A | |
IDM | Pulsed Drain Current, TA = 25°C(2) | 115 | A |
PD | Power Dissipation(1) | 3 | W |
TJ, Tstg |
Operating Junction and Storage Temperature Range |
–55 to 150 | °C |
EAS | Avalanche Energy, single pulse ID = 40 A, L = 0.1 mH, RG = 25 Ω |
80 | mJ |
RDS(on) vs VGS![]() |
Gate Charge![]() |
Changes from D Revision (November 2011) to E Revision
Changes from C Revision (June 2011) to D Revision
Changes from B Revision (September 2010) to C Revision
Changes from A Revision (January 2010) to B Revision
Changes from * Revision (December 2009) to A Revision
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
STATIC CHARACTERISTICS | |||||||
BVDSS | Drain-to-Source Voltage | VGS = 0 V, IDS = 250 μA | 25 | V | |||
IDSS | Drain-to-Source Leakage Current | VGS = 0 V, VDS = 20 V | 1 | μA | |||
IGSS | Gate-to-Source Leakage Current | VDS = 0 V, VGS = +10/–8 V | 100 | nA | |||
VGS(th) | Gate-to-Source Threshold Voltage | VDS = VGS, IDS = 250 μA | 0.6 | 0.85 | 1.1 | V | |
RDS(on) | Drain-to-Source On-Resistance | VGS = 2.5 V, IDS = 20 A | 6.1 | 7.8 | mΩ | ||
VGS = 4.5 V, IDS = 20 A | 4.3 | 5.5 | mΩ | ||||
VGS = 8 V, IDS = 20 A | 3.8 | 4.5 | mΩ | ||||
gƒs | Transconductance | VDS = 15 V, IDS = 20 A | 121 | S | |||
DYNAMIC CHARACTERISTICS | |||||||
CISS | Input Capacitance | VGS = 0 V, VDS = 12.5 V, ƒ = 1 MHz | 1050 | 1350 | pF | ||
COSS | Output Capacitance | 730 | 950 | pF | |||
CRSS | Reverse Transfer Capacitance | 53 | 69 | pF | |||
Rg | Series Gate Resistance | 1.5 | 3 | Ω | |||
Qg | Gate Charge Total (4.5 V) | VDS = 12.5 V, ID = 20 A | 6.5 | 9.2 | nC | ||
Qgd | Gate Charge Gate-to-Drain | 1.2 | nC | ||||
Qgs | Gate Charge Gate-to-Source | 2.1 | nC | ||||
Qg(th) | Gate Charge at Vth | 1 | nC | ||||
QOSS | Output Charge | VDS = 13 V, VGS = 0 V | 15 | nC | |||
td(on) | Turn On Delay Time | VDS = 12.5 V, VGS = 4.5 V, ID = 20 A RG = 2 Ω |
4.8 | ns | |||
tr | Rise Time | 16.1 | ns | ||||
td(off) | Turn Off Delay Time | 13.8 | ns | ||||
tƒ | Fall Time | 5.2 | ns | ||||
DIODE CHARACTERISTICS | |||||||
VSD | Diode Forward Voltage | IS = 20 A, VGS = 0 V | 0.8 | 1 | V | ||
Qrr | Reverse Recovery Charge | VDD = 13 V, IF = 20 A, di/dt = 300 A/μs | 14.5 | nC | |||
trr | Reverse Recovery Time | 20 | ns |
THERMAL METRIC(1)(2) | CSD16340Q3 | UNITS | |
---|---|---|---|
Q3 (8 PINS) | |||
θJA | Junction-to-Ambient Thermal Resistance | 42.0 | °C/W |
θJCtop | Junction-to-Case (top) Thermal Resistance | 20.6 | |
θJB | Junction-to-Board Thermal Resistance | 8.8 | |
ψJT | Junction-to-Top Characterization Parameter | 0.3 | |
ψJB | Junction-to-Board Characterization Parameter | 8.7 | |
θJCbot | Junction-to-Case (bottom) Thermal Resistance | 0.1 |
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Max RθJA = 58°C/W when mounted on 1 inch2 of 2 oz. Cu. |
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Max RθJA = 162°C/W when mounted on minimum pad area of 2 oz. Cu. |
NexFET is a trademark of Texas Instruments.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.