Refer to the PDF data sheet for device specific package drawings
This 30 V, 4.2 mΩ NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5 V gate drive applications.
TA = 25°C | TYPICAL VALUE | UNIT | ||
---|---|---|---|---|
VDS | Drain-to-Source Voltage | 30 | V | |
Qg | Gate Charge Total (4.5 V) | 7.5 | nC | |
Qgd | Gate Charge Gate-to-Drain | 1.7 | nC | |
RDS(on) | Drain-to-Source On-Resistance | VGS = 3 V | 6.3 | mΩ |
VGS = 4.5 V | 4.9 | |||
VGS = 8 V | 4.2 | |||
VGS(th) | Threshold Voltage | 1.2 | V |
Device | Media | Qty | Package | Ship |
---|---|---|---|---|
CSD17309Q3 | 13-Inch Reel | 2500 | SON 3.3 × 3.3 mm Plastic Package | Tape and Reel |
CSD17309Q3T | 7-Inch Reel | 250 |
TA = 25°C | VALUE | UNIT | |
---|---|---|---|
VDS | Drain-to-Source Voltage | 30 | V |
VGS | Gate-to-Source Voltage | +10 / –8 | V |
ID | Continuous Drain Current, TC = 25°C | 60 | A |
Continuous Drain Current(1) | 20 | A | |
IDM | Pulsed Drain Current, TA = 25°C(2) | 112 | A |
PD | Power Dissipation(1) | 2.8 | W |
TJ, Tstg |
Operating Junction and Storage Temperature Range |
–55 to 150 | °C |
EAS | Avalanche Energy, Single Pulse ID = 57 A, L = 0.1 mH, RG = 25 Ω |
162 | mJ |
RDS(on) vs VGS![]() |
Gate Charge![]() |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
STATIC CHARACTERISTICS | |||||||
BVDSS | Drain-to-Source Voltage | VGS = 0 V, ID = 250 μA | 30 | V | |||
IDSS | Drain-to-Source Leakage Current | VGS = 0 V, VDS = 24 V | 1 | μA | |||
IGSS | Gate-to-Source Leakage Current | VDS = 0 V, VGS = +10 / –8 V | 100 | nA | |||
VGS(th) | Gate-to-Source Threshold Voltage | VDS = VGS, ID = 250 μA | 0.9 | 1.2 | 1.7 | V | |
RDS(on) | Drain-to-Source On-Resistance | VGS = 3 V, ID = 18 A | 6.3 | 8.5 | mΩ | ||
VGS = 4.5 V, ID = 18 A | 4.9 | 6.3 | mΩ | ||||
VGS = 8 V, ID = 18 A | 4.2 | 5.4 | mΩ | ||||
gƒs | Transconductance | VDS = 15 V, ID = 18 A | 67 | S | |||
DYNAMIC CHARACTERISTICS | |||||||
CISS | Input Capacitance | VGS = 0 V, VDS = 15 V, ƒ = 1 MHz |
1150 | 1440 | pF | ||
COSS | Output Capacitance | 580 | 750 | pF | |||
CRSS | Reverse Transfer Capacitance | 43 | 56 | pF | |||
Rg | Series Gate Resistance | 1.2 | 2.4 | Ω | |||
Qg | Gate Charge Total (4.5 V) | VDS = 15 V, ID = 18 A | 7.5 | 10 | nC | ||
Qgd | Gate Charge Gate-to-Drain | 1.7 | nC | ||||
Qgs | Gate Charge Gate-to-Source | 2.5 | nC | ||||
Qg(th) | Gate Charge at Vth | 1.3 | nC | ||||
QOSS | Output Charge | VDS = 13 V, VGS = 0 V | 15 | nC | |||
td(on) | Turn On Delay Time | VDS = 15 V, VGS = 4.5 V, ID = 18 A , RG = 2 Ω |
6.1 | ns | |||
tr | Rise Time | 9.9 | ns | ||||
td(off) | Turn Off Delay Time | 13.2 | ns | ||||
tƒ | Fall Time | 3.6 | ns | ||||
DIODE CHARACTERISTICS | |||||||
VSD | Diode Forward Voltage | IDS = 18 A, VGS = 0 V | 0.85 | 1 | V | ||
Qrr | Reverse Recovery Charge | VDD = 13 V, IF = 18 A, di/dt = 300 A/μs |
30 | nC | |||
trr | Reverse Recovery Time | 23 | ns |
THERMAL METRIC | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|
RθJC | Junction-to-Case Thermal Resistance(1) | 2.0 | °C/W | ||
RθJA | Junction-to-Ambient Thermal Resistance(1)(2) | 57 |
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Max RθJA = 57°C/W when mounted on 1 inch2 (6.45 cm2) of 2 oz. (0.071 mm thick) Cu. |
![]() |
Max RθJA = 174°C/W when mounted on a minimum pad area of 2 oz. (0.071 mm thick) Cu. |
NexFET is a trademark of Texas Instruments.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.