DATA SHEET
CSD17382F4 30-V N-Channel FemtoFET MOSFET
1 Features
- Low on-resistance
- Low Qg and Qgd
- Low threshold voltage
- Ultra-small footprint (0402 case size)
- 1.0 mm × 0.6 mm
- Ultra-low profile
- 0.36-mm height
- Integrated ESD protection diode
- Rated > 3-kV HBM
- Rated > 2-kV CDM
- Lead and halogen free
- RoHS compliant
2 Applications
- Optimized for load switch applications
- Optimized for general purpose switching applications
- Single-cell battery applications
- Handheld and mobile applications
3 Description
This 30-V, 54-mΩ, N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.
Typical
Part Dimensions
Product
Summary
| TA = 25°C | TYPICAL VALUE | UNIT | ||
|---|---|---|---|---|
| VDS | Drain-to-Source Voltage | 30 | V | |
| Qg | Gate Charge Total (4.5 V) | 2.1 | nC | |
| Qgd | Gate Charge Gate-to-Drain | 0.63 | nC | |
| RDS(on) | Drain-to-Source On-Resistance | VGS = 1.8 V | 110 | mΩ |
| VGS = 2.5 V | 67 | mΩ | ||
| VGS = 4.5 V | 56 | mΩ | ||
| VGS = 8.0 V | 54 | mΩ | ||
| VGS(th) | Threshold Voltage | 0.9 | V | |
Device Information
| DEVICE(1) | QTY | MEDIA | PACKAGE | SHIP |
|---|---|---|---|---|
| CSD17382F4 | 3000 | 7-Inch Reel | Femto (0402) 1.0-mm × 0.6-mm SMD Lead Less | Tape and Reel |
| CSD17382F4T | 250 |
(1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
| TA = 25°C | VALUE | UNIT | |
|---|---|---|---|
| VDS | Drain-to-Source Voltage | 30 | V |
| VGS | Gate-to-Source Voltage | 10 | V |
| ID | Continuous Drain Current(1) | 2.3 | A |
| IDM | Pulsed Drain Current(2) | 14.8 | A |
| PD | Power Dissipation(1) | 500 | mW |
| ESD Rating | Human Body Model (HBM) | 3000 | V |
| Charged Device Model (CDM) | 2000 | V | |
| TJ, Tstg | Operating Junction, Storage Temperature | –55 to 150 | °C |
| EAS | Avalanche Energy, Single Pulse ID = 6.5 A, L = 0.1 mH, RG = 25 Ω | 2.1 | mJ |
(1) Typical RθJA = 245°C/W on 1-in2 (6.45-cm2), 2-oz.
(0.071-mm) thick Cu pad on a 0.06-in (1.52-mm) thick FR4 PCB.
(0.071-mm) thick Cu pad on a 0.06-in (1.52-mm) thick FR4 PCB.
(2) Pulse duration ≤100 μs, duty cycle ≤1%.
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