Refer to the PDF data sheet for device specific package drawings
This 30-V, 9-mΩ, SON 5-mm × 6-mm NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.
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TA = 25°C | TYPICAL VALUE | UNIT | ||
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VDS | Drain-to-Source Voltage | 30 | V | |
Qg | Gate Charge Total (4.5 V) | 2.8 | nC | |
Qgd | Gate Charge Gate-to-Drain | 0.7 | nC | |
RDS(on) | Drain-to-Source On Resistance | VGS = 4.5 V | 11.8 | mΩ |
VGS = 10 V | 9 | |||
VGS(th) | Threshold Voltage | 1.6 | V |
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DEVICE | MEDIA | QTY | PACKAGE | SHIP |
---|---|---|---|---|
CSD17507Q5A | 13-Inch Reel | 2500 | SON 5.00-mm × 6.00-mm Plastic Package |
Tape and Reel |
CSD17507Q5AT | 7-Inch Reel | 250 |
TA = 25°C (unless otherwise stated) | VALUE | UNIT | |
---|---|---|---|
VDS | Drain-to-Source Voltage | 30 | V |
VGS | Gate-to-Source Voltage | ±20 | V |
ID | Continuous Drain Current | 65 | A |
Continuous Drain Current (Silicon Limited), TC = 25°C | 61 | ||
Continuous Drain Current(1) | 14 | ||
IDM | Pulsed Drain Current, TC = 25°C(2) | 163 | A |
PD | Power Dissipation(1) | 3.1 | W |
Power Dissipation, TC = 25°C | 39 | ||
TJ, TSTG |
Operating Junction, Storage Temperature |
–55 to 150 | °C |
EAS | Avalanche Energy, Single Pulse
ID = 30 A, L = 0.1 mH, RG = 25 Ω |
45 | mJ |
RDS(on) vs VGS![]() |
Gate Charge![]() |
Changes from F Revision (November 2016) to G Revision
Changes from E Revision (July 2011) to F Revision
Changes from D Revision (December 2010) to E Revision
Changes from C Revision (November 2010) to D Revision
Changes from B Revision (September 2010) to C Revision
Changes from A Revision (August 2010) to B Revision
Changes from * Revision (July 2010) to A Revision
PARAMETER | MIN | TYP | MAX | UNIT | |
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RθJC | Thermal resistance junction-to-case(1) | 2.1 | °C/W | ||
RθJA | Thermal resistance junction-to-ambient(1)(2) | 50 | °C/W |
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Max RθJA = 50°C/W when mounted on 1 in2 (6.45 cm2) of 2-oz (0.071-mm) thick Cu. |
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Max RθJA = 125°C/W when mounted on a minimum pad area of 2-oz (0.071-mm) thick Cu. |
ID = 11 A | VDS = 15 V |
ID = 250 µA |
ID = 11 A, VGS = 10 V |
Single pulse, max RθJC = 2.1°C/W |