Refer to the PDF data sheet for device specific package drawings
This 30 V, 7.8 mΩ, 3.3 mm × 3.3 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
SPACE
SPACE
TA = 25°C | TYPICAL VALUE | UNIT | ||
---|---|---|---|---|
VDS | Drain-to-Source Voltage | 30 | V | |
Qg | Gate Charge Total (4.5 V) | 6.0 | nC | |
Qgd | Gate Charge Gate-to-Drain | 1.5 | nC | |
RDS(on) | Drain-to-Source On Resistance | VGS = 4.5 V | 9.6 | mΩ |
VGS = 10 V | 7.8 | mΩ | ||
VGS(th) | Threshold Voltage | 1.6 | V |
DEVICE | QTY | MEDIA | PACKAGE | SHIP |
---|---|---|---|---|
CSD17551Q3A | 2500 | 13-Inch Reel | SON 3.3 mm × 3.3 mm Plastic Package |
Tape and Reel |
CSD17551Q3AT | 250 | 7-Inch Reel |
TA = 25°C unless otherwise stated | VALUE | UNIT | |
---|---|---|---|
VDS | Drain-to-Source Voltage | 30 | V |
VGS | Gate-to-Source Voltage | ±20 | V |
ID | Continuous Drain Current, TC = 25°C | 48 | A |
Continuous Drain Current, Silicon Limited | 48 | A | |
Continuous Drain Current, TA = 25°C(1) | 12 | A | |
IDM | Pulsed Drain Current, TA = 25°C(2) | 71 | A |
PD | Power Dissipation(1) | 2.6 | W |
TJ, Tstg | Operating Junction Temperature, Storage Temperature |
–55 to 150 | °C |
EAS | Avalanche Energy, single pulse ID = 25 A, L = 0.1 mH, RG = 25 Ω |
31 | mJ |
RDS(on) vs VGS![]() |
Gate Charge![]() |
Changes from A Revision (June 2014) to B Revision
Changes from * Revision (September 2012) to A Revision
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
STATIC CHARACTERISTICS | |||||||
BVDSS | Drain-to-source voltage | VGS = 0 V, ID = 250 μA | 30 | V | |||
IDSS | Drain-to-source leakage current | VGS = 0 V, VDS = 24 V | 1 | μA | |||
IGSS | Gate-to-source leakage current | VDS = 0V, VGS = 20 V | 100 | nA | |||
VGS(th) | Gate-to-source threshold voltage | VDS = VGS, ID = 250 μA | 1.1 | 1.6 | 2.1 | V | |
RDS(on) | Drain-to-source on-resistance | VGS = 4.5 V, ID = 11 A | 9.6 | 11.8 | mΩ | ||
VGS = 10 V, ID = 11 A | 7.8 | 9 | mΩ | ||||
gfs | Transconductance | VDS = 15 V, ID = 11 A | 101 | S | |||
DYNAMIC CHARACTERISTICS | |||||||
Ciss | Input capacitance | VGS = 0 V, VDS = 15 V, ƒ = 1 MHz | 1050 | 1370 | pF | ||
Coss | Output capacitance | 244 | 317 | pF | |||
Crss | Reverse transfer capacitance | 24 | 31 | pF | |||
RG | Series gate resistance | 1.5 | 3 | Ω | |||
Qg | Gate charge total (4.5 V) | VDS = 15 V, ID = 11 A | 6 | 7.8 | nC | ||
Qgd | Gate charge gate to drain | 1.5 | nC | ||||
Qgs | Gate charge gate to source | 2.3 | nC | ||||
Qg(th) | Gate charge at Vth | 1.4 | nC | ||||
Qoss | Output charge | VDS = 15 V, VGS = 0 V | 7.4 | nC | |||
td(on) | Turn on delay time | VDS = 15 V, VGS = 4.5 V, IDS = 11 A, RG = 2 Ω |
8 | ns | |||
tr | Rise time | 24 | ns | ||||
td(off) | Turn off delay time | 12 | ns | ||||
tf | Fall time | 3.4 | ns | ||||
DIODE CHARACTERISTICS | |||||||
VSD | Diode forward voltage | ISD = 11 A, VGS = 0 V | 0.8 | 1 | V | ||
Qrr | Reverse recovery charge | VDS= 13.5 V, IF = 11 A, di/dt = 300 A/μs |
13 | nC | |||
trr | Reverse recovery time | 14 | ns |
THERMAL METRIC | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|
RθJC | Junction-to-case thermal resistance(1) | 3.9 | °C/W | ||
RθJA | Junction-to-ambient thermal resistance (1)(2) | 60 | °C/W |
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Max RθJA = 60°C/W when mounted on 1 inch2 (6.45 cm2) of 2 oz. (0.071 mm thick) Cu. |
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Max RθJA = 144°C/W when mounted on a minimum pad area of 2 oz. (0.071 mm thick) Cu. |