Refer to the PDF data sheet for device specific package drawings
This 30-V, 1.2-mΩ, 5-mm × 6-mm NexFET™ power MOSFET is designed to minimize losses in synchronous rectification and other power conversion applications.
TA = 25°C | TYPICAL VALUE | UNIT | ||
---|---|---|---|---|
VDS | Drain-to-Source Voltage | 30 | V | |
Qg | Gate Charge Total (4.5 V) | 30 | nC | |
Qgd | Gate Charge Gate-to-Drain | 7.5 | nC | |
RDS(on) | Drain-to-Source On-Resistance | VGS = 4.5 V | 1.5 | mΩ |
VGS = 10 V | 1.2 | |||
VGS(th) | Threshold Voltage | 1.4 | V |
DEVICE | QTY | MEDIA | PACKAGE | SHIP |
---|---|---|---|---|
CSD17556Q5B | 2500 | 13-Inch Reel | SON 5.00-mm × 6.00-mm Plastic Package |
Tape and Reel |
CSD17556Q5BT | 250 |
TA = 25°C | VALUE | UNIT | |
---|---|---|---|
VDS | Drain-to-Source Voltage | 30 | V |
VGS | Gate-to-Source Voltage | ±20 | V |
ID | Continuous Drain Current (Package Limited) | 100 | A |
Continuous Drain Current (Silicon Limited), TC = 25°C | 215 | ||
Continuous Drain Current(1) | 34 | ||
IDM | Pulsed Drain Current, TA = 25°C(1)(2) | 400 | A |
PD | Power Dissipation(1) | 3.1 | W |
Power Dissipation, TC = 25°C | 191 | ||
TJ, Tstg |
Operating Junction, Storage Temperature |
–55 to 150 | °C |
EAS | Avalanche Energy, Single Pulse ID = 100 A, L = 0.1 mH, RG = 25 Ω |
500 | mJ |
Changes from C Revision (January 2017) to D Revision
Changes from B Revision (August 2014) to C Revision
Changes from A Revision (October 2013) to B Revision
Changes from * Revision (March 2013) to A Revision
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
STATIC CHARACTERISTICS | |||||||
BVDSS | Drain-to-source voltage | VGS = 0 V, IDS = 250 μA | 30 | V | |||
IDSS | Drain-to-source leakage current | VGS = 0 V, VDS = 24 V | 1 | μA | |||
IGSS | Gate-to-source leakage current | VDS = 0 V, VGS = 20 V | 100 | nA | |||
VGS(th) | Gate-to-source threshold voltage | VDS = VGS, IDS = 250 μA | 1.15 | 1.4 | 1.65 | V | |
RDS(on) | Drain-to-source on-resistance | VGS = 4.5 V, IDS = 40 A | 1.5 | 1.8 | mΩ | ||
VGS = 10 V, IDS = 40 A | 1.2 | 1.4 | |||||
gfs | Transconductance | VDS = 15 V, IDS = 40 A | 197 | S | |||
DYNAMIC CHARACTERISTICS | |||||||
Ciss | Input capacitance | VGS = 0 V, VDS = 15 V, ƒ = 1 MHz |
5400 | 7020 | pF | ||
Coss | Output capacitance | 1770 | 2310 | pF | |||
Crss | Reverse transfer capacitance | 68 | 88 | pF | |||
RG | Series gate resistance | 0.7 | 1.4 | Ω | |||
Qg | Gate charge total (4.5 V) | VDS = 15 V, IDS = 40 A | 30 | 39 | nC | ||
Qgd | Gate charge gate-to-drain | 7.5 | nC | ||||
Qgs | Gate charge gate-to-source | 11 | nC | ||||
Qg(th) | Gate charge at Vth | 6.1 | nC | ||||
Qoss | Output charge | VDS = 15 V, VGS = 0 V | 48 | nC | |||
td(on) | Turnon delay time | VDS = 15 V, VGS = 4.5 V, IDS = 40 A, RG = 2 Ω |
14 | ns | |||
tr | Rise time | 26 | ns | ||||
td(off) | Turnoff delay time | 27 | ns | ||||
tf | Fall time | 12 | ns | ||||
DIODE CHARACTERISTICS | |||||||
VSD | Diode forward voltage | ISD = 40 A, VGS = 0 V | 0.8 | 1 | V | ||
Qrr | Reverse recovery charge | VDD= 15 V, IF = 40 A, di/dt = 300 A/μs | 68 | nC | |||
trr | Reverse recovery time | 36 | ns |
THERMAL METRIC | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|
RθJC | Junction-to-case thermal resistance(1) | 1.3 | °C/W | ||
RθJA | Junction-to-ambient thermal resistance(1)(2) | 50 |
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Max RθJA = 50°C/W when mounted on 1-in2 (6.45-cm2) of 2-oz (0.071-mm) thick Cu. |
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Max RθJA = 125°C/W when mounted on a minimum pad area of 2-oz (0.071-mm) thick Cu. |
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
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