Refer to the PDF data sheet for device specific package drawings
This 0.84-mΩ, 30-V, SON 5-mm × 6-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
DEVICE | QTY | MEDIA | PACKAGE | SHIP |
---|---|---|---|---|
CSD17573Q5B | 2500 | 13-Inch Reel | SON 5.00-mm × 6.00-mm Plastic Package |
Tape and Reel |
CSD17573Q5BT | 250 | 7-Inch Reel |
TA = 25°C | VALUE | UNIT | |
---|---|---|---|
VDS | Drain-to-Source Voltage | 30 | V |
VGS | Gate-to-Source Voltage | ±20 | V |
ID | Continuous Drain Current (Package Limited) | 100 | A |
Continuous Drain Current (Silicon Limited), TC = 25°C | 332 | ||
Continuous Drain Current(1) | 43 | ||
IDM | Pulsed Drain Current(2) | 400 | A |
PD | Power Dissipation(1) | 3.2 | W |
Power Dissipation, TC = 25°C | 195 | ||
TJ, Tstg |
Operating Junction, Storage Temperature |
–55 to 150 | °C |
EAS | Avalanche Energy, Single Pulse ID = 76, L = 0.1 mH, RG = 25 Ω |
289 | mJ |
RDS(on) vs VGS![]() |
Gate Charge![]() |
Changes from A Revision (February 2015) to B Revision
Changes from * Revision (June 2014) to A Revision
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
STATIC CHARACTERISTICS | |||||||
BVDSS | Drain-to-source voltage | VGS = 0 V, ID = 250 μA | 30 | V | |||
IDSS | Drain-to-source leakage current | VGS = 0 V, VDS = 24 V | 1 | μA | |||
IGSS | Gate-to-source leakage current | VDS = 0 V, VGS = 20 V | 100 | nA | |||
VGS(th) | Gate-to-source threshold voltage | VDS = VGS, ID = 250 μA | 1.1 | 1.4 | 1.8 | V | |
RDS(on) | Drain-to-source on resistance | VGS = 4.5 V, ID = 35 A | 1.19 | 1.45 | mΩ | ||
VGS = 10 V, ID = 35 A | 0.84 | 1.00 | |||||
gƒs | Transconductance | VDS = 15 V, ID = 35 A | 181 | S | |||
DYNAMIC CHARACTERISTICS | |||||||
Ciss | Input capacitance | VGS = 0 V, VDS = 15 V, ƒ = 1 MHz | 6920 | 9000 | pF | ||
Coss | Output capacitance | 769 | 1000 | pF | |||
Crss | Reverse transfer capacitance | 300 | 390 | pF | |||
RG | Series gate resistance | 0.9 | 1.8 | Ω | |||
Qg | Gate charge total (4.5 V) | VDS = 15 V, ID = 35 A | 49 | 64 | nC | ||
Qgd | Gate charge gate-to-drain | 11.9 | nC | ||||
Qgs | Gate charge gate-to-source | 17.1 | nC | ||||
Qg(th) | Gate charge at Vth | 8.6 | nC | ||||
Qoss | Output charge | VDS = 30 V, VGS = 0 V | 21 | nC | |||
td(on) | Turnon delay time | VDS = 15 V, VGS = 10 V, IDS = 35 A, RG = 0 Ω |
6 | ns | |||
tr | Rise time | 20 | ns | ||||
td(off) | Turnoff delay time | 40 | ns | ||||
tƒ | Fall Time | 7 | ns | ||||
DIODE CHARACTERISTICS | |||||||
VSD | Diode forward voltage | ISD = 35 A, VGS = 0 V | 0.8 | 1 | V | ||
Qrr | Reverse recovery charge | VDS= 15 V, IF = 35 A, di/dt = 300 A/μs |
29 | nC | |||
trr | Reverse recovery time | 21 | ns |
THERMAL METRIC | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|
RθJC | Junction-to-case thermal resistance(1) | 0.8 | °C/W | ||
RθJA | Junction-to-ambient thermal resistance(1)(2) | 50 | °C/W |
![]() |
Max RθJA = 50°C/W when mounted on 1 in2 (6.45 cm2) of 2-oz (0.071-mm) thick Cu. |
![]() |
Max RθJA = 125°C/W when mounted on a minimum pad area of 2-oz (0.071-mm) thick Cu. |
ID = 35 A | VDS = 15 V | ||
ID = 250 µA | ||
ID = 35 A | ||
Single pulse, max RθJC = 0.8°C/W | ||
VDS = 5 V | ||