Refer to the PDF data sheet for device specific package drawings
This 30 V, 5.9 mΩ, SON 5 mm x 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
TA = 25°C | TYPICAL VALUE | UNIT | ||
---|---|---|---|---|
VDS | Drain-to-Source Voltage | 30 | V | |
Qg | Gate Charge Total (4.5 V) | 7.9 | nC | |
Qgd | Gate Charge Gate-to-Drain | 2.0 | nC | |
RDS(on) | Drain-to-Source On-Resistance | VGS = 4.5 V | 7.9 | mΩ |
VGS = 10 V | 5.9 | mΩ | ||
VGS(th) | Threshold Voltage | 1.5 | V |
Device | Media | Qty | Package | Ship |
---|---|---|---|---|
CSD17578Q5A | 13-Inch Reel | 2500 | SON 5 x 6 mm Plastic Package |
Tape and Reel |
CSD17578Q5AT | 7-Inch Reel | 250 |
TA = 25°C | VALUE | UNIT | |
---|---|---|---|
VDS | Drain-to-Source Voltage | 30 | V |
VGS | Gate-to-Source Voltage | ±20 | V |
ID | Continuous Drain Current (Package limited) | 25 | A |
Continuous Drain Current (Silicon limited), TC = 25°C | 59 | ||
Continuous Drain Current(1) | 16 | ||
IDM | Pulsed Drain Current(2) | 132 | A |
PD | Power Dissipation(1) | 3.1 | W |
Power Dissipation, TC = 25°C | 42 | ||
TJ, Tstg |
Operating Junction and Storage Temperature Range |
–55 to 150 | °C |
EAS | Avalanche Energy, single pulse ID = 22 A, L = 0.1 mH |
23 | mJ |
RDS(on) vs VGS![]() |
Gate Charge![]() |
DATE | REVISION | NOTES |
---|---|---|
March 2015 | * | Initial release. |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
STATIC CHARACTERISTICS | |||||||
BVDSS | Drain-to-Source Voltage | VGS = 0 V, ID = 250 μA | 30 | V | |||
IDSS | Drain-to-Source Leakage Current | VGS = 0 V, VDS = 24 V | 1 | μA | |||
IGSS | Gate-to-Source Leakage Current | VDS = 0 V, VGS = 20 V | 100 | nA | |||
VGS(th) | Gate-to-Source Threshold Voltage | VDS = VGS, ID = 250 μA | 1.1 | 1.5 | 1.9 | V | |
RDS(on) | Drain-to-Source On-Resistance | VGS = 4.5 V, ID = 10 A | 7.9 | 9.3 | mΩ | ||
VGS = 10 V, ID = 10 A | 5.9 | 6.9 | mΩ | ||||
gƒs | Transconductance | VDS = 3 V, ID = 10 A | 44 | S | |||
DYNAMIC CHARACTERISTICS | |||||||
Ciss | Input Capacitance | VGS = 0 V, VDS = 15 V, ƒ = 1 MHz | 1170 | 1510 | pF | ||
Coss | Output Capacitance | 136 | 177 | pF | |||
Crss | Reverse Transfer Capacitance | 58 | 75 | pF | |||
RG | Series Gate Resistance | 1.8 | 3.6 | Ω | |||
Qg | Gate Charge Total (4.5 V) | VDS = 15 V, ID = 10 A | 7.9 | 10.3 | nC | ||
Qg | Gate Charge Total (10 V) | 17.2 | 22.3 | nC | |||
Qgd | Gate Charge Gate-to-Drain | 2.0 | nC | ||||
Qgs | Gate Charge Gate-to-Source | 3.1 | nC | ||||
Qg(th) | Gate Charge at Vth | 1.7 | nC | ||||
Qoss | Output Charge | VDS = 15 V, VGS = 0 V | 4.2 | nC | |||
td(on) | Turn On Delay Time | VDS = 15 V, VGS = 10 V, IDS = 10 A, RG = 0 Ω |
4 | ns | |||
tr | Rise Time | 22 | ns | ||||
td(off) | Turn Off Delay Time | 17 | ns | ||||
tƒ | Fall Time | 2 | ns | ||||
DIODE CHARACTERISTICS | |||||||
VSD | Diode Forward Voltage | ISD = 10 A, VGS = 0 V | 0.8 | 1.0 | V | ||
Qrr | Reverse Recovery Charge | VDS= 15 V, IF = 10 A, di/dt = 300 A/μs |
6.5 | nC | |||
trr | Reverse Recovery Time | 6.8 | ns |
THERMAL METRIC | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|
RθJC | Junction-to-Case Thermal Resistance (1) | 3.8 | °C/W | ||
RθJA | Junction-to-Ambient Thermal Resistance(1)(2) | 50 |
![]() |
Max RθJA = 50°C/W when mounted on 1 inch2 (6.45 cm2) of 2 oz. (0.071 mm thick) Cu. |
![]() |
Max RθJA = 140°C/W when mounted on a minimum pad area of 2 oz. (0.071 mm thick) Cu. |
ID = 10 A | VDS = 15 V | |
ID = 250 µA | ||
ID = 10 A | ||
Single Pulse, Max RθJC = 3.8°C/W | ||
VDS = 5 V | ||
NexFET is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.