CSD18510Q5B N-Channel NexFET Power MOSFET

1 Features

Low R_DS(ON)
Low-Thermal Resistance
Avalanche Rated
Logic Level
Lead-Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5-mm × 6-mm Plastic Package

2 Applications

DC-DC Conversion
Secondary Side Synchronous Rectifier
Motor Control

3 Description

This 40-V, 0.79-mΩ, SON 5-mm × 6-mm NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

Top View

Product Summary

T_A = 25°C		TYPICAL VALUE		UNIT
V_DS	Drain-to-Source Voltage	40		V
Q_g	Gate Charge Total (10 V)	118		nC
Q_gd	Gate Charge Gate-to-Drain	21		nC
R_DS(on)	Drain-to-Source On Resistance	V_GS = 4.5 V	1.2	mΩ
R_DS(on)	Drain-to-Source On Resistance	V_GS = 10 V	0.79	mΩ
V_GS(th)	Threshold Voltage	1.7		V

Device Information⁽¹⁾

DEVICE	QTY	MEDIA	PACKAGE	SHIP
CSD18510Q5B	2500	13-Inch Reel	SON 5.00-mm × 6.00-mm Plastic Package	Tape and Reel
CSD18510Q5BT	250	7-Inch Reel	SON 5.00-mm × 6.00-mm Plastic Package	Tape and Reel

For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

T_A = 25°C		VALUE	UNIT
V_DS	Drain-to-Source Voltage	40	V
V_GS	Gate-to-Source Voltage	±20	V
I_D	Continuous Drain Current (Package Limited)	100	A
	Continuous Drain Current (Silicon Limited), T_C = 25°C	300
	Continuous Drain Current⁽¹⁾	42
I_DM	Pulsed Drain Current, T_A = 25°C⁽²⁾	400	A
P_D	Power Dissipation⁽¹⁾	3.1	W
P_D	Power Dissipation, T_C = 25°C	156	W
T_J, T_stg	Operating Junction Temperature, Storage Temperature	–55 to 150	°C
E_AS	Avalanche Energy, Single Pulse I_D = 81, L = 0.1 mH, R_G = 25 Ω	328	mJ

Typical R_θJA = 40°C/W on a 1-in², 2-oz Cu pad on a
0.06-in thick FR4 PCB.
Max R_θJC = 0.8°C/W, Pulse duration ≤ 100 μs, duty cycle ≤ 1%.

R_DS(on) vs V_GS

Gate Charge

4 Revision History

DATE	REVISION	NOTES
March 2017	*	Initial release.

5 Specifications

5.1 Electrical Characteristics

T_A = 25°C (unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-source voltage	V_GS = 0 V, I_D = 250 μA	40			V
I_DSS	Drain-to-source leakage current	V_GS = 0 V, V_DS = 32 V			1	μA
I_GSS	Gate-to-source leakage current	V_DS = 0 V, V_GS = 20 V			100	nA
V_GS(th)	Gate-to-source threshold voltage	V_DS = V_GS, I_D = 250 μA	1.2	1.7	2.3	V
R_DS(on)	Drain-to-source on resistance	V_GS = 4.5 V, I_D = 32 A		1.2	1.6	mΩ
R_DS(on)	Drain-to-source on resistance	V_GS = 10 V, I_D = 32 A		0.79	0.96	mΩ
g_fs	Transconductance	V_DS = 4 V, I_D = 32 A		147		S
DYNAMIC CHARACTERISTICS
C_iss	Input capacitance	V_GS = 0 V, V_DS = 20 V, ƒ = 1 MHz		8770	11400	pF
C_oss	Output capacitance			832	1080	pF
C_rss	Reverse transfer capacitance			424	551	pF
R_G	Series gate resistance			0.9	1.8	Ω
Q_g	Gate charge total (4.5 V)	V_DS = 20 V, I_D = 32 A		58	75	nC
Q_g	Gate charge total (10 V)			118	153	nC
Q_gd	Gate charge gate-to-drain			21		nC
Q_gs	Gate charge gate-to-source			28		nC
Q_g(th)	Gate charge at V_th			15		nC
Q_oss	Output charge	V_DS = 20 V, V_GS = 0 V		35		nC
t_d(on)	Turnon delay time	V_DS = 20 V, V_GS = 10 V, I_DS = 32 A, R_G = 0 Ω		8		ns
t_r	Rise time			17		ns
t_d(off)	Turnoff delay time			44		ns
t_f	Fall time			15		ns
DIODE CHARACTERISTICS
V_SD	Diode forward voltage	I_SD = 32 A, V_GS = 0 V		0.8	1.0	V
Q_rr	Reverse recovery charge	V_DS= 20 V, I_F = 32 A, di/dt = 300 A/μs		31		nC
t_rr	Reverse recovery time	V_DS= 20 V, I_F = 32 A, di/dt = 300 A/μs		19		ns

5.2 Thermal Information

T_A = 25°C (unless otherwise stated)

THERMAL METRIC		MIN	TYP	MAX	UNIT
R_θJC	Junction-to-case thermal resistance⁽¹⁾			0.8	°C/W
R_θJA	Junction-to-ambient thermal resistance⁽¹⁾⁽²⁾			50	°C/W

(1) R_θJC is determined with the device mounted on a 1-in² (6.45-cm²), 2-oz (0.071-mm) thick Cu pad on a 1.5-in × 1.5-in (3.81-cm × 3.81-cm), 0.06-in (1.52-mm) thick FR4 PCB. R_θJC is specified by design, whereas R_θJA is determined by the user’s board design.

(2) Device mounted on FR4 material with 1-in² (6.45-cm²), 2-oz (0.071-mm) thick Cu.