DATA SHEET
CSD18511Q5A 40 V N-Channel NexFET™ Power MOSFET
1 Features
- Low RDS(ON)
- Low Thermal Resistance
- Avalanche Rated
- Logic Level
- Pb Free Terminal Plating
- RoHS Compliant
- Halogen Free
- SON 5-mm × 6-mm Plastic Package
2 Applications
- DC-DC Conversion
- Secondary Side Synchronous Rectifier
- Battery Motor Control
3 Description
This 40 V, 1.9 mΩ, SON 5 × 6 mm NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.
Top View
Product Summary
| TA = 25°C | TYPICAL VALUE | UNIT | ||
|---|---|---|---|---|
| VDS | Drain-to-Source Voltage | 40 | V | |
| Qg | Gate Charge Total (10 V) | 63 | nC | |
| Qgd | Gate Charge Gate-to-Drain | 11.2 | nC | |
| RDS(on) | Drain-to-Source On-Resistance | VGS = 4.5 V | 2.7 | mΩ |
| VGS = 10 V | 1.9 | mΩ | ||
| VGS(th) | Threshold Voltage | 1.8 | V | |
Ordering Information(1)
| Device | Qty | Media | Package | Ship |
|---|---|---|---|---|
| CSD18511Q5A | 2500 | 13-Inch Reel | SON 5 mm × 6 mm Plastic Package | Tape and Reel |
| CSD18511Q5AT | 250 | 7-Inch Reel |
- For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
| TA = 25°C | VALUE | UNIT | |
|---|---|---|---|
| VDS | Drain-to-Source Voltage | 40 | V |
| VGS | Gate-to-Source Voltage | ±20 | V |
| ID | Continuous Drain Current (Package limited) | 100 | A |
| Continuous Drain Current (Silicon limited), TC = 25°C | 159 | ||
| Continuous Drain Current (1) | 27 | A | |
| IDM | Pulsed Drain Current (2) | 400 | A |
| PD | Power Dissipation(1) | 3.1 | W |
| Power Dissipation, TC = 25°C | 104 | ||
| TJ, Tstg |
Operating Junction and Storage Temperature Range |
–55 to 150 | °C |
| EAS | Avalanche Energy, Single Pulse ID = 56 A, L = 0.1 mH, RG = 25 Ω |
157 | mJ |
- Typical RθJA = 40°C/W on a 1-inch2, 2-oz. Cu pad on a 0.06-inch thick FR4 PCB.
- Max RθJC = 1.2°C/W, Pulse duration ≤100μs, duty cycle ≤1%
RDS(on) vs VGS |
Gate Charge |
4 Revision History
| DATE | REVISION | NOTES |
|---|---|---|
| December 2016 | * | Initial release. |
