This 40 V, 1.9 mΩ, SON 5 × 6 mm NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.
TA = 25°C | TYPICAL VALUE | UNIT | ||
---|---|---|---|---|
VDS | Drain-to-Source Voltage | 40 | V | |
Qg | Gate Charge Total (10 V) | 63 | nC | |
Qgd | Gate Charge Gate-to-Drain | 11.2 | nC | |
RDS(on) | Drain-to-Source On-Resistance | VGS = 4.5 V | 2.7 | mΩ |
VGS = 10 V | 1.9 | mΩ | ||
VGS(th) | Threshold Voltage | 1.8 | V |
Device | Qty | Media | Package | Ship |
---|---|---|---|---|
CSD18511Q5A | 2500 | 13-Inch Reel | SON 5 mm × 6 mm Plastic Package | Tape and Reel |
CSD18511Q5AT | 250 | 7-Inch Reel |
TA = 25°C | VALUE | UNIT | |
---|---|---|---|
VDS | Drain-to-Source Voltage | 40 | V |
VGS | Gate-to-Source Voltage | ±20 | V |
ID | Continuous Drain Current (Package limited) | 100 | A |
Continuous Drain Current (Silicon limited), TC = 25°C | 159 | ||
Continuous Drain Current (1) | 27 | A | |
IDM | Pulsed Drain Current (2) | 400 | A |
PD | Power Dissipation(1) | 3.1 | W |
Power Dissipation, TC = 25°C | 104 | ||
TJ, Tstg |
Operating Junction and Storage Temperature Range |
–55 to 150 | °C |
EAS | Avalanche Energy, Single Pulse ID = 56 A, L = 0.1 mH, RG = 25 Ω |
157 | mJ |
RDS(on) vs VGS![]() |
Gate Charge![]() |
DATE | REVISION | NOTES |
---|---|---|
December 2016 | * | Initial release. |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
STATIC CHARACTERISTICS | |||||||
BVDSS | Drain-to-Source Voltage | VGS = 0 V, ID = 250 μA | 40 | V | |||
IDSS | Drain-to-Source Leakage Current | VGS = 0 V, VDS = 32 V | 1 | μA | |||
IGSS | Gate-to-Source Leakage Current | VDS = 0 V, VGS = 20 V | 100 | nA | |||
VGS(th) | Gate-to-Source Threshold Voltage | VDS = VGS, ID = 250 μA | 1.5 | 1.8 | 2.4 | V | |
RDS(on) | Drain-to-Source On-Resistance | VGS = 4.5 V, ID = 24 A | 2.7 | 3.5 | mΩ | ||
VGS = 10 V, ID = 24 A | 1.9 | 2.3 | mΩ | ||||
gƒs | Transconductance | VDS = 20 V, ID = 24 A | 5.2 | S | |||
DYNAMIC CHARACTERISTICS | |||||||
Ciss | Input Capacitance | VGS = 0 V, VDS = 20 V, ƒ = 1 MHz |
4500 | 5850 | pF | ||
Coss | Output Capacitance | 452 | 588 | pF | |||
Crss | Reverse Transfer Capacitance | 238 | 309 | pF | |||
RG | Series Gate Resistance | 0.7 | 1.4 | Ω | |||
Qg | Gate Charge Total (10 V) | VDS = 20 V, ID = 24 A | 63 | 82 | nC | ||
Qg | Gate Charge Total (4.5 V) | 31 | 41 | nC | |||
Qgd | Gate Charge Gate-to-Drain | 11.2 | nC | ||||
Qgs | Gate Charge Gate-to-Source | 13.2 | nC | ||||
Qg(th) | Gate Charge at Vth | 8.2 | nC | ||||
Qoss | Output Charge | VDS = 20 V, VGS = 0 V | 20 | nC | |||
td(on) | Turn On Delay Time | VDS = 20 V, VGS = 10 V, IDS = 24 A, RG = 0 |
6 | ns | |||
tr | Rise Time | 15 | ns | ||||
td(off) | Turn Off Delay Time | 24 | ns | ||||
tƒ | Fall Time | 5 | ns | ||||
DIODE CHARACTERISTICS | |||||||
VSD | Diode Forward Voltage | IDS = 24 A, VGS = 0 V | 0.75 | 1 | V | ||
Qrr | Reverse Recovery Charge | VDS= 20 V, IF = 24 A, di/dt = 300 A/μs | 17 | nC | |||
trr | Reverse Recovery Time | 14 | ns |
THERMAL METRIC | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|
RθJC | Junction-to-Case Thermal Resistance(1) | 1.2 | °C/W | ||
RθJA | Junction-to-Ambient Thermal Resistance(1)(2) | 50 |
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Max RθJA = 50°C/W when mounted on 1 inch2 (6.45-cm2) of 2-oz. (0.071-mm thick) Cu. |
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Max RθJA = 125°C/W when mounted on a minimum pad area of 2-oz. (0.071-mm thick) Cu. |
ID = 24 A, VDS = 20 V | ||
ID = 250 µA | ||
ID = 24 A | ||
Single pulse, max RθJC= 1.2°C/W | ||
Max RθJC= 1.2°C/W | ||
VDS = 5 V | ||