3 Description
This 40 V, 1.9 mΩ, SON 5 × 6 mm NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.
Top View
Product Summary
TA = 25°C |
TYPICAL VALUE |
UNIT |
VDS |
Drain-to-Source Voltage |
40 |
V |
Qg |
Gate Charge Total (10 V) |
63 |
nC |
Qgd |
Gate Charge Gate-to-Drain |
11.2 |
nC |
RDS(on) |
Drain-to-Source On-Resistance |
VGS = 4.5 V |
2.7 |
mΩ |
VGS = 10 V |
1.9 |
mΩ |
VGS(th) |
Threshold Voltage |
1.8 |
V |
Ordering Information(1)
Device |
Qty |
Media |
Package |
Ship |
CSD18511Q5A |
2500 |
13-Inch Reel |
SON 5 mm × 6 mm Plastic Package |
Tape and Reel |
CSD18511Q5AT |
250 |
7-Inch Reel |
- For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C |
VALUE |
UNIT |
VDS |
Drain-to-Source Voltage |
40 |
V |
VGS |
Gate-to-Source Voltage |
±20 |
V |
ID |
Continuous Drain Current (Package limited) |
100 |
A |
Continuous Drain Current (Silicon limited), TC = 25°C |
159 |
Continuous Drain Current (1) |
27 |
A |
IDM |
Pulsed Drain Current (2) |
400 |
A |
PD |
Power Dissipation(1) |
3.1 |
W |
Power Dissipation, TC = 25°C |
104 |
TJ, Tstg |
Operating Junction and Storage Temperature Range |
–55 to 150 |
°C |
EAS |
Avalanche Energy, Single Pulse ID = 56 A, L = 0.1 mH, RG = 25 Ω |
157 |
mJ |
- Typical RθJA = 40°C/W on a 1-inch2, 2-oz. Cu pad on a 0.06-inch thick FR4 PCB.
- Max RθJC = 1.2°C/W, Pulse duration ≤100μs, duty cycle ≤1%