Refer to the PDF data sheet for device specific package drawings
This 4.7 mΩ, 60 V, SON 5 × 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
TA = 25°C | TYPICAL VALUE | UNIT | ||
---|---|---|---|---|
VDS | Drain-to-Source Voltage | 60 | V | |
Qg | Gate Charge Total (10 V) | 29 | nC | |
Qgd | Gate Charge Gate-to-Drain | 5.4 | nC | |
RDS(on) | Drain-to-Source On-Resistance | VGS = 4.5 V | 6.5 | mΩ |
VGS = 10 V | 4.7 | mΩ | ||
VGS(th) | Threshold Voltage | 1.9 | V |
Device | Qty | Media | Package | Ship |
---|---|---|---|---|
CSD18533Q5A | 2500 | 13-Inch Reel | SON 5 mm × 6 mm Plastic Package | Tape and Reel |
CSD18533Q5AT | 250 | 7-Inch Reel |
TA = 25°C | VALUE | UNIT | |
---|---|---|---|
VDS | Drain-to-Source Voltage | 60 | V |
VGS | Gate-to-Source Voltage | ±20 | V |
ID | Continuous Drain Current (Package limited), TC = 25°C | 100 | A |
Continuous Drain Current (Silicon limited), TC = 25°C | 103 | ||
Continuous Drain Current, TA = 25°C(1) | 17 | ||
IDM | Pulsed Drain Current, TA = 25°C(2) | 267 | A |
PD | Power Dissipation(1) | 3.2 | W |
Power Dissipation, TC = 25°C | 116 | ||
TJ, Tstg |
Operating Junction and Storage Temperature Range |
–55 to 150 | °C |
EAS | Avalanche Energy, single pulse ID = 53 A, L = 0.1 mH, RG = 25 Ω |
140 | mJ |
RDS(on) vs VGS![]() |
Gate Charge![]() |
Changes from A Revision (May 2013) to B Revision
Changes from * Revision (September 2012) to A Revision
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
¨STATIC CHARACTERISTICS | |||||||
BVDSS | Drain-to-Source Voltage | VGS = 0 V, ID = 250 μA | 60 | V | |||
IDSS | Drain-to-Source Leakage Current | VGS = 0 V, VDS = 48 V | 1 | μA | |||
IGSS | Gate-to-Source Leakage Current | VDS = 0 V, VGS = 20 V | 100 | nA | |||
VGS(th) | Gate-to-Source Threshold Voltage | VDS = VGS, ID = 250 μA | 1.5 | 1.9 | 2.3 | V | |
RDS(on) | Drain-to-Source On-Resistance | VGS = 4.5 V, ID = 18 A | 6.5 | 8.5 | mΩ | ||
VGS = 10 V, ID = 18 A | 4.7 | 5.9 | mΩ | ||||
gƒs | Transconductance | VDS = 30 V, ID = 18 A | 122 | S | |||
DYNAMIC CHARACTERISTICS | |||||||
Ciss | Input Capacitance | VGS = 0 V, VDS = 30 V, ƒ = 1 MHz | 2200 | 2750 | pF | ||
Coss | Output Capacitance | 292 | 365 | pF | |||
Crss | Reverse Transfer Capacitance | 7 | 9 | pF | |||
RG | Series Gate Resistance | 1.3 | 2.6 | Ω | |||
Qg | Gate Charge Total (4.5 V) | VDS = 30 V, ID = 18 A | 14 | 18 | nC | ||
Qg | Gate Charge Total (10 V) | 29 | 36 | ||||
Qgd | Gate Charge Gate-to-Drain | 5.4 | nC | ||||
Qgs | Gate Charge Gate-to-Source | 6.6 | nC | ||||
Qg(th) | Gate Charge at Vth | 4.7 | nC | ||||
Qoss | Output Charge | VDS = 30 V, VGS = 0 V | 31 | nC | |||
td(on) | Turn On Delay Time | VDS = 30 V, VGS = 10 V, IDS = 18 A, RG = 0 Ω | 5.2 | ns | |||
tr | Rise Time | 5.5 | ns | ||||
td(off) | Turn Off Delay Time | 15 | ns | ||||
tƒ | Fall Time | 2.0 | ns | ||||
DIODE CHARACTERISTICS | |||||||
VSD | Diode Forward Voltage | ISD = 18 A, VGS = 0 V | 0.8 | 1 | V | ||
Qrr | Reverse Recovery Charge | VDS= 30 V, IF = 18 A, di/dt = 300 A/μs | 68 | nC | |||
trr | Reverse Recovery Time | 40 | ns |
THERMAL METRIC | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|
RθJC | Thermal Resistance Junction to Case(1) | 1.3 | °C/W | ||
RθJA | Thermal Resistance Junction to Ambient(1)(2) | 50 |