Refer to the PDF data sheet for device specific package drawings
This 3.4 mΩ, 80 V, SON 5 mm × 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
SPACE
SPACE
TA = 25°C | TYPICAL VALUE | UNIT | ||
---|---|---|---|---|
VDS | Drain-to-Source Voltage | 80 | V | |
Qg | Gate Charge Total (10 V) | 48 | nC | |
Qgd | Gate Charge Gate to Drain | 8.6 | nC | |
RDS(on) | Drain-to-Source On Resistance | VGS = 6 V | 3.8 | mΩ |
VGS = 10 V | 3.4 | mΩ | ||
VGS(th) | Threshold Voltage | 2.7 | V |
Device | Media | Qty | Package | Ship |
---|---|---|---|---|
CSD19502Q5B | 13-Inch Reel | 2500 | SON 5 x 6 mm Plastic Package |
Tape and Reel |
CSD19502Q5BT | 13-Inch Reel | 250 |
TA = 25°C | VALUE | UNIT | |
---|---|---|---|
VDS | Drain-to-Source Voltage | 80 | V |
VGS | Gate-to-Source Voltage | ±20 | V |
ID | Continuous Drain Current (Package limited) | 100 | A |
Continuous Drain Current (Silicon limited), TC = 25°C | 157 | ||
Continuous Drain Current(1) | 17 | ||
IDM | Pulsed Drain Current(2) | 400 | A |
PD | Power Dissipation(1) | 3.1 | W |
Power Dissipation, TC = 25°C | 195 | ||
TJ, Tstg |
Operating Junction and Storage Temperature Range |
–55 to 150 | °C |
EAS | Avalanche Energy, single pulse ID = 74 A, L = 0.1 mH, RG = 25 Ω |
274 | mJ |
RDS(on) vs VGS![]() |
Gate Charge![]() |
Changes from A Revision (June 2014) to B Revision
Changes from * Revision (December 2013) to A Revision
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
STATIC CHARACTERISTICS | |||||||
BVDSS | Drain-to-Source Voltage | VGS = 0 V, ID = 250 μA | 80 | V | |||
IDSS | Drain-to-Source Leakage Current | VGS = 0 V, VDS = 64 V | 1 | μA | |||
IGSS | Gate-to-Source Leakage Current | VDS = 0 V, VGS = 20 V | 100 | nA | |||
VGS(th) | Gate-to-Source Threshold Voltage | VDS = VGS, ID = 250 μA | 2.2 | 2.7 | 3.3 | V | |
RDS(on) | Drain-to-Source On Resistance | VGS = 6 V, ID = 19 A | 3.8 | 4.8 | mΩ | ||
VGS = 10 V, ID = 19 A | 3.4 | 4.1 | mΩ | ||||
gfs | Transconductance | VDS = 8 V, ID = 19 A | 88 | S | |||
DYNAMIC CHARACTERISTICS | |||||||
Ciss | Input Capacitance | VGS = 0 V, VDS = 40 V, ƒ = 1 MHz | 3750 | 4870 | pF | ||
Coss | Output Capacitance | 925 | 1202 | pF | |||
Crss | Reverse Transfer Capacitance | 17 | 22 | pF | |||
RG | Series Gate Resistance | 1.2 | 2.4 | Ω | |||
Qg | Gate Charge Total (10 V) | VDS = 40 V, ID = 19 A | 48 | 62 | nC | ||
Qgd | Gate Charge Gate to Drain | 8.6 | nC | ||||
Qgs | Gate Charge Gate to Source | 14 | nC | ||||
Qg(th) | Gate Charge at Vth | 10 | nC | ||||
Qoss | Output Charge | VDS = 40 V, VGS = 0 V | 130 | nC | |||
td(on) | Turn On Delay Time | VDS = 40 V, VGS = 10 V, IDS = 19 A, RG = 0 Ω |
8 | ns | |||
tr | Rise Time | 6 | ns | ||||
td(off) | Turn Off Delay Time | 22 | ns | ||||
tf | Fall Time | 7 | ns | ||||
DIODE CHARACTERISTICS | |||||||
VSD | Diode Forward Voltage | ISD = 19 A, VGS = 0 V | 0.8 | 1 | V | ||
Qrr | Reverse Recovery Charge | VDS= 40 V, IF = 19 A, di/dt = 300 A/μs |
275 | nC | |||
trr | Reverse Recovery Time | 72 | ns |
THERMAL METRIC | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|
RθJC | Junction-to-Case Thermal Resistance(1) | 0.8 | °C/W | ||
RθJA | Junction-to-Ambient Thermal Resistance (1)(2) | 50 |
![]() |
Max RθJA = 50°C/W when mounted on 1 inch2 (6.45 cm2) of 2-oz. (0.071-mm thick) Cu. |
![]() |
Max RθJA = 125°C/W when mounted on a minimum pad area of 2-oz. (0.071-mm thick) Cu. |
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
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