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  • CSD22206W –8-V P-Channel NexFET Power MOSFET

    • SLPS689 May   2017 CSD22206W

      PRODUCTION DATA.  

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  • CSD22206W –8-V P-Channel NexFET Power MOSFET
  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 CSD22206W Package Dimensions
    2. 7.2 Recommended Land Pattern
  8. IMPORTANT NOTICE

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • YZF|9
Thermal pad, mechanical data (Package|Pins)
Orderable Information
  • slps689_oa
  • slps689_pm
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DATA SHEET

CSD22206W –8-V P-Channel NexFET Power MOSFET

1 Features

  • Ultra-Low Resistance
  • Small Footprint 1.5 mm × 1.5 mm
  • Lead Free
  • Gate ESD Protection
  • RoHS Compliant
  • Halogen Free
  • Gate-Source Voltage Clamp

2 Applications

  • Load Switch Applications
  • Battery Management
  • Battery Protection

3 Description

This –8-V, 4.7-mΩ, 1.5-mm × 1.5-mm device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.

Top View and Circuit Configuration
CSD22206W Pin_Map_and_Circuit_Configuration_P3.gif

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage –8 V
Qg Gate Charge Total (–4.5 V) 11.2 nC
Qgd Gate Charge Gate-to-Drain 1.8 nC
RDS(on) Drain-to-Source On Resistance VGS = –2.5 V 6.8 mΩ
VGS = –4.5 V 4.7
VGS(th) Threshold Voltage –0.7 V

Device Information

DEVICE QTY MEDIA PACKAGE SHIP
CSD22206W 3000 7-Inch Reel 1.50-mm × 1.50-mm
Wafer BGA Package		 Tape and Reel
CSD22206WT 250

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage –8 V
VGS Gate-to-Source Voltage –6 V
ID Continuous Drain Current(1) –5 A
Pulsed Drain Current(2) –108 A
PD Power Dissipation 1.7 W
TJ,
Tstg 		Operating Junction,
Storage Temperature		 –55 to 150 °C
  1. Device operating at a temperature of 105°C.
  2. Typ RθJA = 75°C/W ,mounted on FR4 material with maximum Cu mounting area, pulse width ≤ 100 μs, duty cycle ≤ 1%.

RDS(on) vs VGS

CSD22206W D007_SLPS636.gif

Gate Charge

CSD22206W D004_SLPS636_FP.gif

4 Revision History

DATE REVISION NOTES
May 2017 * Initial release.

5 Specifications

5.1 Electrical Characteristics

TA = 25°C (unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-source voltage VGS = 0 V, IDS = –250 μA –8 V
BVGSS Gate-to-source voltage VDS = 0 V, IG = –250 μA –6 V
IDSS Drain-to-source leakage current VGS = 0 V, VDS = –6.4 V –1 μA
IGSS Gate-to-source leakage current VDS = 0 V, VGS = –6 V –100 nA
VGS(th) Gate-to-source threshold voltage VDS = VGS, IDS = –250 μA –0.4 –0.7 –1.05 V
RDS(on) Drain-to-source on resistance VGS = –2.5 V, IDS = –2 A 6.8 9.1 mΩ
VGS = –4.5 V, IDS = –2 A 4.7 5.7
gfs Transconductance VDS = –0.8 V, IDS = –2 A 20 S
DYNAMIC CHARACTERISTICS
CISS Input capacitance VGS = 0 V, VDS = –4 V,
ƒ = 1 MHz		 1750 2275 pF
COSS Output capacitance 960 1250 pF
CRSS Reverse transfer capacitance 340 440 pF
RG Series gate resistance 30 Ω
Qg Gate charge total (–4.5 V) VDS = –4 V,
ID = –2 A		 11.2 14.6 nC
Qgd Gate charge gate-to-drain 1.8 nC
Qgs Gate charge gate-to-source 2.1 nC
Qg(th) Gate charge at Vth 1.3 nC
QOSS Output charge VDS = –4 V, VGS = 0 V 7.2 nC
td(on) Turnon delay time VDS = –4 V, VGS = –4.5 V,
IDS = –2 A, RG = 0 Ω		 37 ns
tr Rise time 17 ns
td(off) Turnoff delay time 118 ns
tf Fall time 45 ns
DIODE CHARACTERISTICS
VSD Diode forward voltage IDS = –2 A, VGS = 0 V –0.69 –1.0
Qrr Reverse recovery charge VDS= –4 V, IF = –1 A,
di/dt = 200 A/μs 		24 nC
trr Reverse recovery time 59 ns

5.2 Thermal Information

TA = 25°C (unless otherwise stated)
THERMAL METRIC TYPICAL VALUES UNIT
RθJA Junction-to-ambient thermal resistance(1) 75 °C/W
Junction-to-ambient thermal resistance(2) 230
(1) Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu.
(2) Device mounted on FR4 material with minimum Cu mounting area.

CSD22206W M0149-01_LPS266.gif
Typ RθJA = 75°C/W when mounted on 1 in2 of 2-oz Cu.
CSD22206W M0150-01_LPS266.gif
Typ RθJA = 230°C/W when mounted on minimum pad area of
2-oz Cu.

5.3 Typical MOSFET Characteristics

TA = 25°C (unless otherwise stated)
CSD22206W D001_SLPS636.png
Figure 1. Transient Thermal Impedance
CSD22206W D002_SLPS636.gif
Figure 2. Saturation Characteristics
CSD22206W D004_SLPS636.gif
ID = –2 A VDS = –4 V
Figure 4. Gate Charge
CSD22206W D006_SLPS636.gif
ID = –250 µA
Figure 6. Threshold Voltage vs Temperature
CSD22206W D008_SLPS636.gif
ID = –2 A
Figure 8. Normalized On-State Resistance vs Temperature
CSD22206W D010_SLPS636.gif
Single pulse, max RθJA = 75°C/W
Figure 10. Maximum Safe Operating Area
CSD22206W D003_SLPS636.gif
VDS = –4 V
Figure 3. Transfer Characteristics
CSD22206W D005_SLPS636.gif
Figure 5. Capacitance
CSD22206W D007_SLPS636.gif
Figure 7. On-State Resistance vs Gate-to-Source Voltage
CSD22206W D009_SLPS636.gif
Figure 9. Typical Diode Forward Voltage
CSD22206W D011_SLPS636.gif
Figure 11. Maximum Drain Current vs Temperature

 
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