Refer to the PDF data sheet for device specific package drawings
This 16.2-mΩ, –8-V, P-Channel device is designed to deliver the lowest on-resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics in an ultra-low profile.
TA = 25°C | TYPICAL VALUE | UNIT | ||
---|---|---|---|---|
VDS | Drain-to-Source Voltage | –8 | V | |
Qg | Gate Charge Total (–4.5 V) | 4.9 | nC | |
Qgd | Gate Charge Gate-to-Drain | 0.6 | nC | |
RDS(on) | Drain-to-Source On-Resistance |
VGS = –1.8 V | 35 | mΩ |
VGS = –2.5 V | 22 | mΩ | ||
VGS = –4.5 V | 16.2 | mΩ | ||
VGS(th) | Voltage Threshold | –0.8 | V |
DEVICE | QTY | MEDIA | PACKAGE | SHIP |
---|---|---|---|---|
CSD23203W | 3000 | 7-Inch Reel | 1.00-mm × 1.50-mm Wafer Level Package |
Tape and Reel |
CSD23203WT | 250 | 7-Inch Reel |
TA = 25°C | VALUE | UNIT | |
---|---|---|---|
VDS | Drain-to-Source Voltage | –8 | V |
VGS | Gate-to-Source Voltage | –6 | V |
ID | Continuous Drain Current(1) | –3 | A |
IDM | Pulsed Drain Current(2) | –54 | A |
PD | Power Dissipation | 0.75 | W |
TJ,
Tstg |
Operating Junction, Storage Temperature |
–55 to 150 | °C |
RDS(on) vs VGS![]() |
Gate Charge![]() |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
STATIC CHARACTERISTICS | |||||||
BVDSS | Drain-to-source voltage | VGS = 0 V, ID = –250 μA | –8 | V | |||
IDSS | Drain-to-source leakage current | VGS = 0 V, VDS = –6.4 V | –1 | μA | |||
IGSS | Gate-to-source leakage current | VDS = 0 V, VGS = –6 V | –100 | nA | |||
VGS(th) | Gate-to-source threshold voltage | VDS = VGS, ID = –250 μA | -0.6 | –0.8 | –1.1 | V | |
RDS(on) | Drain-to-source on-resistance | VGS = –1.8 V, ID = –1.5 A | 35 | 53 | mΩ | ||
VGS = –2.5 V, ID = –1.5 A | 22 | 26.5 | mΩ | ||||
VGS = –4.5 V, ID = –1.5 A | 16.2 | 19.4 | mΩ | ||||
gƒs | Transconductance | VDS = –0.8 V, ID = –1.5 A | 14 | S | |||
DYNAMIC CHARACTERISTICS | |||||||
CISS | Input capacitance | VGS = 0 V, VDS = –4 V, ƒ = 1 MHz | 703 | 914 | pF | ||
COSS | Output capacitance | 391 | 508 | pF | |||
CRSS | Reverse transfer capacitance | 133 | 172 | pF | |||
Qg | Gate charge total (–4.5 V) | VDS = –4 V, ID = –1.5 A | 4.9 | 6.3 | nC | ||
Qgd | Gate charge gate-to-drain | 0.6 | nC | ||||
Qgs | Gate charge gate-to-source | 1.3 | nC | ||||
Qg(th) | Gate charge at Vth | 0.6 | nC | ||||
QOSS | Output charge | VDS = –4 V, VGS = 0 V | 1.9 | nC | |||
td(on) | Turnon delay time | VDS = –4 V, VGS = –4.5 V, ID = –1.5 A RG = 10 Ω |
14 | ns | |||
tr | Rise time | 12 | ns | ||||
td(off) | Turnoff delay time | 58 | ns | ||||
tƒ | Fall time | 27 | ns | ||||
DIODE CHARACTERISTICS | |||||||
VSD | Diode forward voltage | IS = –1.5 A, VGS = 0 V | –0.75 | –1 | V | ||
Qrr | Reverse recovery charge | VDS= –4.7 V, IF = –1.5 A di/dt = 100 A/μs |
6.1 | nC | |||
trr | Reverse recovery time | 21 | ns |
THERMAL METRIC | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|
RθJA | Junction-to-ambient thermal resistance(1) | 170 | °C/W | ||
Junction-to-ambient thermal resistance(2) | 55 |
![]() |
Typ RθJA = 55°C/W when mounted on 1 in2 of 2-oz Cu. |
![]() |
Typ RθJA = 170°C/W when mounted on minimum pad area of 2-oz Cu. |
SPACE
ID = –1.5 A | VDS = –4 V | |
ID = –250 µA | ||
ID = –1.5 A | ||
Single Pulse, Typical RθJA = 170°C/W | ||
VDS = –5 V | ||
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
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