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Data Sheet
DRV7308 Three Phase 650V, 5A, GaN Intelligent
Power Module
1 Features
- Three-phase PWM motor driver with integrated 650V
enhancement mode GaNFETs
- Up to 450V operating voltage
- 650V absolute maximum voltage
- High output current capability: 5A Peak current
- Low conduction loss: Low on-state resistance per GaN FET: 205mΩ
RDS(ON) at TA = 25°C
- Low switching loss: Zero
reverse recovery, low output capacitance, slew
rate control
- Low distortion: Ultra low
propagation delay < 135ns, Ultra low adaptive
dead time < 200ns
- Integrated gate drives with slew rate control of phase node voltage
- Slew rate options from
5V/ns to 40V/ns
- 500ns minimum low side on time support with integrated fast bootstrap GaN
rectifier
- Low-side GaN FET open
source pins to support 1- or 2- or 3-shunt current
sensing
- Supports up to 60kHz hard switching
- Integrates a 11MHz, 15V/μs amplifier for single shunt current sensing
- Supports 3.3V and 5V logic inputs
- Integrated BRAKE functionality to turn on all low side GaN FETs together
- Integrated temperature sensor
- >1.6mm clearance between OUTx
and OUTx, VM and OUTx and OUTx and PGND.
- 2mm clearance between VM and PGND
- Integrated protection features
- GVDD and bootstrap under voltage lockout
- Over current protection for each GaN FET
- Over temperature protection
- PWM input dead time
- Current limit protection
using integrated comparators for all three
phases
- Fault condition indication pin (HV_nFAULT)
